公开(公告)号：US20160118548A1

公开(公告)日：2016-04-28

申请号：US14924714

申请日：2015-10-28

Applicant: NICHIA CORPORATION

Inventor： Hirofumi KAWAGUCHI ,  Akinori YONEDA ,  Kazuki KASHIMOTO

IPC: H01L33/50 ,  H01L33/36 ,  H01L33/56 ,  H01L33/46 ,  H01L25/075 ,  H01L33/48

CPC classification number: H01L33/50 ,  H01L25/0753 ,  H01L33/38 ,  H01L33/56 ,  H01L2224/16225 ,  H01L2224/73253

Abstract: A light emitting device has a plurality of light emitting elements that are arranged with gaps between the devices on a mounting board in a first direction, a wavelength-conversion member that covers the plurality of light emitting elements, a light reflective resin. Each light emitting element has an n-type semiconductor layer, an active layer provided in a part of the n-type semiconductor layer, and a p-type semiconductor layer provided on the active layer. In a second direction which is perpendicular to the first direction, an n-side electrodes are provided at least in regions at both ends of the n-type semiconductor layer, and a p-side electrode is provided on the surface of the p-type semiconductor layer, and wherein in the second direction, the wavelength-conversion member is positioned to approximately align both sides with both active layer side faces, or to dispose its sides outward of the active layer side faces.

Abstract translation: 发光器件具有多个发光元件，其在第一方向上的安装板上的器件之间布置有间隙，覆盖多个发光元件的波长转换构件，光反射树脂。 每个发光元件具有n型半导体层，设置在n型半导体层的一部分中的有源层和设置在有源层上的p型半导体层。 在垂直于第一方向的第二方向上，至少在n型半导体层的两端的区域中设置n侧电极，在p型表面上设置p侧电极 半导体层，并且其中在所述第二方向上，所述波长转换构件被定位成将两侧与所述两个有源层侧面大致对准，或者将其侧面设置在所述有源层侧面的外侧。

公开(公告)号：US20180102460A1

公开(公告)日：2018-04-12

申请号：US15840669

申请日：2017-12-13

Applicant: NICHIA CORPORATION

Inventor： Hirofumi KAWAGUCHI ,  Akinori YONEDA ,  Hisashi KASAI ,  Kazuki KASHIMOTO ,  Masafumi ITASAKA

IPC: H01L33/40 ,  H01L33/38 ,  H01L33/36

CPC classification number: H01L33/405 ,  H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/42 ,  H01L2933/0016

Abstract: A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.

公开(公告)号：US20160149085A1

公开(公告)日：2016-05-26

申请号：US14947716

申请日：2015-11-20

Applicant: Nichia Corporation

Inventor： Kazuki KASHIMOTO ,  Masafumi ITASAKA ,  Hisashi KASAI ,  Naoki AZUMA

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/00

CPC classification number: H01L33/385 ,  H01L33/08 ,  H01L33/382 ,  H01L2933/0016

Abstract: A method of manufacturing a semiconductor light emitting element includes forming a semiconductor stacked layer body on a substrate, the semiconductor stacked layer body including a first semiconductor layer and a second semiconductor layer; removing a portion of the semiconductor stacked layer body and exposing the first semiconductor layer such that the second semiconductor layer includes an extending portion that extends in a plane direction; forming a conductor layer electrically connecting the first semiconductor layer and the extending portion of the second semiconductor layer; forming a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer; forming a protective film covering at least a portion of the first electrode and at least a portion of the second electrode; and after forming the protective film, removing a portion of the exposed portion of the extending portion.

Abstract translation: 半导体发光元件的制造方法包括在基板上形成半导体层叠体，所述半导体层叠体包含第一半导体层和第二半导体层， 去除所述半导体堆叠层体的一部分并暴露所述第一半导体层，使得所述第二半导体层包括在平面方向上延伸的延伸部分; 形成电连接所述第一半导体层和所述第二半导体层的延伸部分的导体层; 形成与第一半导体层电连接的第一电极和与第二半导体层电连接的第二电极; 形成覆盖所述第一电极和所述第二电极的至少一部分的至少一部分的保护膜; 并且在形成保护膜之后，去除延伸部分的暴露部分的一部分。

公开(公告)号：US20160284940A1

公开(公告)日：2016-09-29

申请号：US15173013

申请日：2016-06-03

Applicant: NICHIA CORPORATION

Inventor： Hirofumi KAWAGUCHI ,  Akinori YONEDA ,  Hisashi KASAI ,  Kazuki KASHIMOTO ,  Masafumi ITASAKA

IPC: H01L33/40 ,  H01L33/38

CPC classification number: H01L33/405 ,  H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/42 ,  H01L2933/0016

Abstract: A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.

Abstract translation: 一种半导体发光元件，具有：半导体层叠体; 包含设置在p型半导体层的上表面上的Ag的全表面电极; 覆盖全表面电极的表面的覆盖电极设置成在全表面电极的外边缘处与p型半导体层的上表面接触，并由Al基金属材料制成; p侧电极，设置在所述盖电极的表面的一部分上; 覆盖所述覆盖电极的其他表面并且包含形成所述覆盖电极的金属材料的氧化物的金属氧化物膜; 并且提供由氧化物制成并覆盖金属氧化物膜的表面的绝缘膜。

公开(公告)号：US20150280071A1

公开(公告)日：2015-10-01

申请号：US14669345

申请日：2015-03-26

Applicant: NICHIA CORPORATION

Inventor： Koichi TAKENAGA ,  Hirofumi KAWAGUCHI ,  Kazuki KASHIMOTO

IPC: H01L33/38 ,  H01L33/52 ,  H01L33/62

CPC classification number: H01L33/387 ,  H01L33/382 ,  H01L33/40 ,  H01L33/44 ,  H01L33/54 ,  H01L33/62

Abstract: A light emitting element includes a semiconductor stacked layer body having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer in this order, and a plurality of exposed portions defined at an upper surface side of the semiconductor stacked layer body, the plurality of exposed portions respectively exposing a part of the n-type semiconductor layer, a p-side electrode arranged in a first region and electrically connected with an upper surface of the p-type semiconductor layer and, arranged at one corner above the p-type semiconductor layer in a plan view, and an n-side electrode electrically integrally connected to the plurality of exposed portions and arranged in a different region in a plan view. In a plan view, the semiconductor stacked layer body has a rectangular shape and the plurality of exposed portions includes, a plurality of first exposed portions arranged at substantially equal intervals along a side of the semiconductor stacked layer body and a plurality of second exposed portions arranged closer to the p-side electrode than the first exposed portions are to the p-side electrode. The plurality of second exposed portions include at least one second exposed portion which has a shortest distance to the first exposed portions, the shortest distance to the first exposed portions being longer than a shortest distance among the first exposed portions. The at least one second exposed portion also has a shortest distance to the p-side electrode shorter than the shortest distance among the first exposed portions.

Abstract translation: 发光元件依次包括具有n型半导体层，有源层和p型半导体层的半导体叠层体，以及限定在半导体层叠层的上表面侧的多个露出部 所述多个曝光部分分别暴露所述n型半导体层的一部分，布置在第一区域中并与p型半导体层的上表面电连接的p侧电极，并且布置在 平面图中的p型半导体层和与多个暴露部分电连接并且以平面图形式布置在不同区域中的n侧电极。 在平面图中，半导体层叠体具有矩形形状，并且多个露出部分包括沿着半导体堆叠层主体的侧面以大致相等的间隔布置的多个第一暴露部分和多个第二暴露部分， 比p侧电极更靠近p侧电极。 多个第二暴露部分包括至少一个与第一暴露部分具有最短距离的第二暴露部分，第一暴露部分的最短距离比第一暴露部分中的最短距离长。 所述至少一个第二暴露部分也具有比所述第一暴露部分中的最短距离短的至p侧电极的最短距离。

公开(公告)号：US20170271559A1

公开(公告)日：2017-09-21

申请号：US15614233

申请日：2017-06-05

Applicant: NICHIA CORPORATION

Inventor： Akinori YONEDA ,  Yoshiyuki AIHARA ,  Shinji NAKAMURA ,  Akiyoshi KINOUCHI ,  Kazuki KASHIMOTO ,  Kazuyuki AKAISHI

IPC: H01L33/38 ,  H01L33/48 ,  H01L33/54 ,  H01L33/62 ,  H01L33/40

CPC classification number: H01L33/385 ,  H01L33/387 ,  H01L33/405 ,  H01L33/486 ,  H01L33/54 ,  H01L33/62

Abstract: A side-view type light emitting device has a bottom surface thereof as a light emission surface and a first lateral surface thereof as a mounting surface for mounting on a mounting substrate, and includes a semiconductor layered structure including a first semiconductor layer, an active layer and a second semiconductor layer; a first connecting electrode exposed from the first lateral surface and electrically connected to the first semiconductor layer; a first electrode disposed between the first semiconductor layer and the first connecting electrode; a second connecting electrode exposed from the first lateral surface; a metal wire electrically connecting an upper surface of the second semiconductor layer to the second connecting electrode; and a resin layer. In a direction perpendicular to the light emission surface, the active layer does not overlap with the first connecting electrode, and the active layer does not overlap with the second connecting electrode.

公开(公告)号：US20150060934A1

公开(公告)日：2015-03-05

申请号：US14477617

申请日：2014-09-04

Applicant: Nichia Corporation

Inventor： Akinori YONEDA ,  Yoshiyuki AIHARA ,  Shinji NAKAMURA ,  Akiyoshi KINOUCHI ,  Kazuki KASHIMOTO ,  Kazuyuki AKAISHI

IPC: H01L33/38 ,  H01L33/56

CPC classification number: H01L33/385 ,  H01L33/387 ,  H01L33/405 ,  H01L33/486 ,  H01L33/54 ,  H01L33/62

Abstract: A side-view type light emitting device having a bottom surface thereof as a light emission surface and one side surface thereof as amounting surface for mounting on amounting substrate includes a stacked semiconductor layer having a first semiconductor layer, an active layer, and a second semiconductor layer which are stacked in that order from a side of the bottom surface; a first connecting electrode exposed from the one side surface and electrically connected to the first semiconductor layer; a metal wire having one end thereof electrically connected to an upper surface of the second semiconductor layer; a second connecting electrode exposed from the one side surface and electrically connected to the other end of the metal wire; and a resin layer which covers at least a part of each of the first semiconductor layer, the second semiconductor layer, the first connecting electrode, the second connecting electrode and the metal wire and which is configured to form an upper surface and side surfaces of the light emitting device.

Abstract translation: 将其底表面作为发光面的侧视型发光器件和作为用于安装在数量基片上的表面的一个侧面包括具有第一半导体层，有源层和第二半导体的叠层半导体层 层，其从该底面的一侧依次层叠; 从所述一个侧表面暴露并电连接到所述第一半导体层的第一连接电极; 金属线，其一端电连接到第二半导体层的上表面; 从所述一个侧表面暴露并且电连接到所述金属线的另一端的第二连接电极; 以及树脂层，其覆盖第一半导体层，第二半导体层，第一连接电极，第二连接电极和金属线中的每一个的至少一部分，并且被配置为形成上表面和 发光装置。

公开(公告)号：US20140339587A1

公开(公告)日：2014-11-20

申请号：US14279890

申请日：2014-05-16

Applicant: NICHIA CORPORATION

Inventor： Hirofumi KAWAGUCHI ,  Akinori YONEDA ,  Hisashi KASAI ,  Kazuki KASHIMOTO ,  Masafumi ITASAKA

IPC: H01L33/38 ,  H01L33/00 ,  H01L33/40 ,  H01L33/24

CPC classification number: H01L33/405 ,  H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/42 ,  H01L2933/0016

Abstract: A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.

Abstract translation: 一种半导体发光元件，具有：半导体层叠体; 包含设置在p型半导体层的上表面上的Ag的全表面电极; 覆盖全表面电极的表面的覆盖电极设置成在全表面电极的外边缘处与p型半导体层的上表面接触，并由Al基金属材料制成; p侧电极，设置在所述盖电极的表面的一部分上; 覆盖所述覆盖电极的其他表面并且包含形成所述覆盖电极的金属材料的氧化物的金属氧化物膜; 并且提供由氧化物制成并覆盖金属氧化物膜的表面的绝缘膜。