公开(公告)号：US20230246138A1

公开(公告)日：2023-08-03

申请号：US18159279

申请日：2023-01-25

Applicant: NICHIA CORPORATION

Inventor： Eiji MURAMOTO ,  Takumi OTSUKA ,  Yuya YAMAKAMI ,  Haruhiko NISHIKAGE ,  Shota KAMMOTO ,  Akinori KISHI

IPC: H01L33/38 ,  H01L33/32 ,  H01L33/62 ,  H01L33/02

CPC classification number: H01L33/382 ,  H01L33/025 ,  H01L33/32 ,  H01L33/62

Abstract: A light emitting element includes: a semiconductor structure including an n-side layer, a p-side layer, and an active layer, each being made of a nitride semiconductor, wherein the active layer is positioned between the n-side layer and the p-side layer and is configured to emit ultraviolet light; an n-electrode electrically connected to the n-side layer; and a p-electrode comprising a first metal layer in contact with the p-side layer and electrically connected to the p-side layer. The p-side layer comprises a first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer, each containing a p-type impurity. A surface of the second layer includes an exposed region that is exposed from the third layer. The first layer and the second layer contain Al.