公开(公告)号：US20230352629A1

公开(公告)日：2023-11-02

申请号：US18306875

申请日：2023-04-25

Applicant: NICHIA CORPORATION

Inventor： Yasunobu HOSOKAWA ,  Takumi OTSUKA

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/32 ,  H01L33/20

CPC classification number: H01L33/382 ,  H01L33/62 ,  H01L33/32 ,  H01L33/20

Abstract: A semiconductor light-emitting element includes a semiconductor structure including an n-side semiconductor layer including a first region, a second region located on an outer periphery of the first region, and a plurality of third regions surrounded by the first region in a plan view, a light-emitting layer disposed on the first region, and a p-side semiconductor layer disposed on the light-emitting layer; a first insulating film disposed on the semiconductor structure and defining a plurality of first openings, each located above a corresponding one of the plurality of third regions and a plurality of second openings located above the p-side semiconductor layer; an n-side electrode disposed on the first insulating film and electrically connected to the n-side semiconductor layer through the plurality of first openings; at least one n-pad electrode disposed in the second region and electrically connected to the n-side electrode; a second insulating film disposed on the first insulating film and defining a plurality of third openings, each located at a position overlapping a corresponding one of the plurality of second openings; and a p-pad electrode disposed on the second insulating film and electrically connected to the p-side semiconductor layer through the plurality of third openings. The p-pad electrode covers the first region and the plurality of third regions in a plan view. Two or more of the plurality of first openings are located around a corresponding one of the plurality of third openings in a plan view.

公开(公告)号：US20230246138A1

公开(公告)日：2023-08-03

申请号：US18159279

申请日：2023-01-25

Applicant: NICHIA CORPORATION

Inventor： Eiji MURAMOTO ,  Takumi OTSUKA ,  Yuya YAMAKAMI ,  Haruhiko NISHIKAGE ,  Shota KAMMOTO ,  Akinori KISHI

IPC: H01L33/38 ,  H01L33/32 ,  H01L33/62 ,  H01L33/02

CPC classification number: H01L33/382 ,  H01L33/025 ,  H01L33/32 ,  H01L33/62

Abstract: A light emitting element includes: a semiconductor structure including an n-side layer, a p-side layer, and an active layer, each being made of a nitride semiconductor, wherein the active layer is positioned between the n-side layer and the p-side layer and is configured to emit ultraviolet light; an n-electrode electrically connected to the n-side layer; and a p-electrode comprising a first metal layer in contact with the p-side layer and electrically connected to the p-side layer. The p-side layer comprises a first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer, each containing a p-type impurity. A surface of the second layer includes an exposed region that is exposed from the third layer. The first layer and the second layer contain Al.

公开(公告)号：US20220181523A1

公开(公告)日：2022-06-09

申请号：US17679559

申请日：2022-02-24

Applicant: NICHIA CORPORATION

Inventor： Takumi OTSUKA

IPC: H01L33/40 ,  H01L33/32 ,  H01L33/00 ,  H01L33/42

Abstract: A method of manufacturing a nitride semiconductor light-emitting element configured to emit deep ultraviolet light includes: providing a semiconductor structure comprising: an n-side semiconductor layer comprising an n-side contact layer comprising aluminum, gallium, and nitrogen, a p-side semiconductor layer, and an active layer between the n-side semiconductor layer and the p-side semiconductor layer; forming an n-side electrode, which comprises forming, successively from an n-side contact layer side: a first layer located above the n-side contact layer and comprising a titanium layer, a second layer located above the first layer and comprising a silicon-containing aluminum alloy layer, and a third layer located above the second layer and comprising a tantalum layer and/or a tungsten layer; and heating the n-side electrode.