公开(公告)号：US20170250312A1

公开(公告)日：2017-08-31

申请号：US15440470

申请日：2017-02-23

Applicant: NICHIA CORPORATION

Inventor： Yuya YAMAKAMI ,  Daisuke MORITA

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/32 ,  H01L33/62

CPC classification number: H01L33/38 ,  H01L33/405 ,  H01L33/44

Abstract: A light-emitting device includes a semiconductor layered structure; a conductive substrate disposed below the semiconductor layered structure; one or more upper electrodes, each disposed on a portion of an upper surface of the semiconductor layered structure; a lower electrode disposed on a lower surface of the semiconductor layered structure in a region spaced apart from regions of the lower surface of the semiconductor layered structure directly under the upper electrodes, the lower electrode being electrically connected between the semiconductor layered structure and the substrate; and one or more conduction prevention portions, each disposed on the lower surface of the semiconductor layered structure in at least a region located between (i) a region directly under a respective one of the one or more upper electrodes and (ii) the region on which the lower electrode is disposed.

公开(公告)号：US20180204981A1

公开(公告)日：2018-07-19

申请号：US15918776

申请日：2018-03-12

Applicant: NICHIA CORPORATION

Inventor： Yuya YAMAKAMI ,  Daisuke MORITA

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/44 ,  H01L27/15 ,  H01L33/40 ,  H01L33/22 ,  H01L33/32

CPC classification number: H01L33/38 ,  H01L27/15 ,  H01L33/22 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62

Abstract: A light-emitting device includes a semiconductor layered structure; an upper electrode disposed on a portion of an upper surface of the semiconductor layered structure; a lower electrode disposed on a lower surface of the semiconductor layered structure in a region spaced from a region directly under the upper electrode, the lower electrode being reflective; and a protective film disposed continuously on a surface of the upper electrode and the upper surface of the semiconductor layered structure. A thickness of a first portion of the protective film, which is disposed at least in a region directly above the lower electrode, is smaller than a thickness of a second portion of the protective film, which is disposed continuously on the surface of the upper electrode and the upper surface of the semiconductor layered structure adjacent to the portion on which the upper electrode is disposed.

公开(公告)号：US20190006560A1

公开(公告)日：2019-01-03

申请号：US16123922

申请日：2018-09-06

Applicant: NICHIA CORPORATION

Inventor： Yuya YAMAKAMI ,  Daisuke MORITA

IPC: H01L33/38 ,  H01L33/44

Abstract: A light-emitting device includes: a semiconductor layered structure; a conductive substrate disposed under the semiconductor layered structure; one or more upper electrodes each disposed on a portion of an upper surface of the semiconductor layered structure; a lower electrode disposed on a lower surface of the semiconductor layered structure; one or more metal members each having light reflectivity and disposed on the lower surface of the semiconductor layered structure in a region between (i) a region directly under a respective one of the one or more the upper electrodes and (ii) the region on which the lower electrode is disposed; one or more first insulating members each disposed on the lower surface of the semiconductor layered structure in the region directly under the respective one of the one or more the upper electrodes; and one or more second insulating members on a lower surface of the metal member.

公开(公告)号：US20170279007A1

公开(公告)日：2017-09-28

申请号：US15462362

申请日：2017-03-17

Applicant: NICHIA CORPORATION

Inventor： Yuya YAMAKAMI ,  Daisuke MORITA

IPC: H01L33/38 ,  H01L27/15 ,  H01L33/62 ,  H01L33/40 ,  H01L33/44

CPC classification number: H01L33/38 ,  H01L27/15 ,  H01L33/22 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62

Abstract: A light-emitting device includes a semiconductor layered structure; an upper electrode disposed on a portion of an upper surface of the semiconductor layered structure; a lower electrode disposed on a lower surface of the semiconductor layered structure in a region spaced from a region directly under the upper electrode, the lower electrode being reflective; and a protective film disposed continuously on a surface of the upper electrode and the upper surface of the semiconductor layered structure. A thickness of a first portion of the protective film, which is disposed at least in a region directly above the lower electrode, is smaller than a thickness of a second portion of the protective film, which is disposed continuously on the surface of the upper electrode and the upper surface of the semiconductor layered structure adjacent to the portion on which the upper electrode is disposed.

公开(公告)号：US20230246138A1

公开(公告)日：2023-08-03

申请号：US18159279

申请日：2023-01-25

Applicant: NICHIA CORPORATION

Inventor： Eiji MURAMOTO ,  Takumi OTSUKA ,  Yuya YAMAKAMI ,  Haruhiko NISHIKAGE ,  Shota KAMMOTO ,  Akinori KISHI

IPC: H01L33/38 ,  H01L33/32 ,  H01L33/62 ,  H01L33/02

CPC classification number: H01L33/382 ,  H01L33/025 ,  H01L33/32 ,  H01L33/62

Abstract: A light emitting element includes: a semiconductor structure including an n-side layer, a p-side layer, and an active layer, each being made of a nitride semiconductor, wherein the active layer is positioned between the n-side layer and the p-side layer and is configured to emit ultraviolet light; an n-electrode electrically connected to the n-side layer; and a p-electrode comprising a first metal layer in contact with the p-side layer and electrically connected to the p-side layer. The p-side layer comprises a first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer, each containing a p-type impurity. A surface of the second layer includes an exposed region that is exposed from the third layer. The first layer and the second layer contain Al.

公开(公告)号：US20200168761A1

公开(公告)日：2020-05-28

申请号：US16689594

申请日：2019-11-20

Applicant: NICHIA CORPORATION

Inventor： Mitsumasa TAKEDA ,  Yuya YAMAKAMI

IPC: H01L33/00 ,  H01L25/075

Abstract: A method for manufacturing a light-emitting element includes exposing a portion of an insulating layer from under a metal layer and a semiconductor layer by removing, through an opening of a resist layer, a portion of the metal layer and a portion of the semiconductor layer by wet etching using a first etchant, etching rates of the first etchant for the metal layer and the semiconductor layer each being higher than an etching rate of the first etchant for the insulating layer; removing the resist layer by wet etching after the removing of the metal layer portion and the semiconductor layer portion; and after the removing of the resist layer, removing a remaining portion of the metal layer while causing the insulating layer exposed from under the metal layer and the semiconductor layer to remain. The opening of the resist layer is positioned directly on the conductive layer.

公开(公告)号：US20140295598A1

公开(公告)日：2014-10-02

申请号：US14302285

申请日：2014-06-11

Applicant: Nichia Corporation

Inventor： Kentaro WATANABE ,  Giichi MARUTSUKI ,  Yuya YAMAKAMI

IPC: H01L33/00

CPC classification number: H01L33/0075 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0079 ,  H01L2933/0033

Abstract: A method of fabricating a plurality of light emitting elements includes forming a nitride semiconductor layer on a growth substrate, the nitride semiconductor layer including at least an n-type nitride semiconductor layer, an active layer made of a nitride semiconductor, and a p-type nitride semiconductor layer stacked in this order; forming a p-electrode layer, the p-electrode layer including portions that correspond to the light emitting elements; forming a p-passivation layer that includes portions between the portions of the p-electrode layer formed on the upper surface of the nitride semiconductor layer; forming a seed layer on the p-electrode layer and the p-passivation layer; forming an insulating layer having portions formed on an upper surface of the seed layer; forming a plating layer on the seed layer; and forming a plating substrate by removing the insulating layer to form spaces between portions of the plating layer.

Abstract translation: 制造多个发光元件的方法包括在生长衬底上形成氮化物半导体层，所述氮化物半导体层至少包括n型氮化物半导体层，由氮化物半导体构成的有源层和p型 氮化物半导体层按顺序堆叠; 形成p电极层，p电极层包括对应于发光元件的部分; 形成p钝化层，其包括形成在所述氮化物半导体层的上表面上的p电极层的部分之间的部分; 在p电极层和p钝化层上形成晶种层; 形成具有形成在种子层的上表面上的部分的绝缘层; 在种子层上形成镀层; 以及通过去除所述绝缘层以在所述镀层的各部分之间形成间隔来形成镀覆衬底。