公开(公告)号：US20230246138A1

公开(公告)日：2023-08-03

申请号：US18159279

申请日：2023-01-25

Applicant: NICHIA CORPORATION

Inventor： Eiji MURAMOTO ,  Takumi OTSUKA ,  Yuya YAMAKAMI ,  Haruhiko NISHIKAGE ,  Shota KAMMOTO ,  Akinori KISHI

IPC: H01L33/38 ,  H01L33/32 ,  H01L33/62 ,  H01L33/02

CPC classification number: H01L33/382 ,  H01L33/025 ,  H01L33/32 ,  H01L33/62

Abstract: A light emitting element includes: a semiconductor structure including an n-side layer, a p-side layer, and an active layer, each being made of a nitride semiconductor, wherein the active layer is positioned between the n-side layer and the p-side layer and is configured to emit ultraviolet light; an n-electrode electrically connected to the n-side layer; and a p-electrode comprising a first metal layer in contact with the p-side layer and electrically connected to the p-side layer. The p-side layer comprises a first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer, each containing a p-type impurity. A surface of the second layer includes an exposed region that is exposed from the third layer. The first layer and the second layer contain Al.

公开(公告)号：US20210090914A1

公开(公告)日：2021-03-25

申请号：US17009166

申请日：2020-09-01

Applicant: NICHIA CORPORATION

Inventor： Haruhiko NISHIKAGE ,  Yoshinori MIYAMOTO ,  Yasunobu HOSOKAWA

IPC: H01L21/67 ,  H01L21/78

Abstract: A method for manufacturing a semiconductor element includes: providing a wafer comprising first and second regions at an upper surface of the wafer, the second region being located at a periphery of the first region and being at a lower position than the first region; and forming a semiconductor layer made of a nitride semiconductor at the upper surface of the wafer. In a top-view, the first region comprises an extension portion at an end portion of the first region in a first direction that passes through the center of the wafer parallel to an m-axis of the semiconductor layer, the extension portion extending in a direction from a center of the wafer toward an edge of the wafer or in a direction from an edge of the wafer toward a center of the wafer.

公开(公告)号：US20200279730A1

公开(公告)日：2020-09-03

申请号：US16802782

申请日：2020-02-27

Applicant: NICHIA CORPORATION

Inventor： Haruhiko NISHIKAGE ,  Yoshinori MIYAMOTO ,  Yasunobu HOSOKAWA

IPC: H01L21/02 ,  H01L21/78

Abstract: A method of manufacturing semiconductor elements includes: disposing a semiconductor layer made of a nitride semiconductor on a first wafer; and bonding a second wafer to the first wafer via the semiconductor layer. The first wafer has an upper surface including a first region and a second region surrounding a periphery of the first region and located lower than the first region. In a top view of the first wafer, a first distance between an edge of the first wafer and the first region of the first wafer in each of a plurality of first directions parallel to respective m-axes of the semiconductor layer is smaller than a second distance between the edge of the first wafer and the first region of the first wafer in each of a plurality of second directions parallel to respective a-axes of the semiconductor layer.