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    METHOD OF MANUFACTURING LIGHT EMITTING DEVICE
    1.
    发明申请
    METHOD OF MANUFACTURING LIGHT EMITTING DEVICE 有权

    公开(公告)号：US20250151471A1

    公开(公告)日：2025-05-08

    申请号：US18904264

    申请日：2024-10-02

    Applicant: NICHIA CORPORATION

    Inventor： Yasuhiro MIKI ,  Hirofumi KAWAGUCHI

    IPC: H01L33/38 ,  H01L33/62

    Abstract: A method of manufacturing a light emitting device includes: preparing a light emitting element comprising an external terminal having a first portion located on a semiconductor structure side and a second portion disposed on the first portion, wherein an area of the second portion is less than an area of the first portion; preparing a substrate having a wiring part; bonding the light emitting element and the wiring part by bringing the second portion of the external terminal into contact with the wiring part; and subsequent to bonding the light emitting element and the wiring part, forming plating continuously on lateral faces of the first and second portions, wherein a thickness of the second portion is 5 μm at most, and wherein the plating is formed such that the plating formed on the wiring part is in contact with the plating formed on the first portion.

    SEMICONDUCTOR ELEMENT
    2.
    发明申请
    SEMICONDUCTOR ELEMENT 有权
    半导体元件

    公开(公告)号：US20130075914A1

    公开(公告)日：2013-03-28

    申请号：US13627310

    申请日：2012-09-26

    Applicant: Nichia Corporation

    Inventor： Takashi ICHIHARA ,  Yasuhiro MIKI

    IPC: H01L29/43

    CPC classification number: H01L29/43 ,  H01L33/38 ,  H01L33/42

    Abstract: There is provided a semiconductor element including a semiconductor layer, a translucent electrode which is formed on the semiconductor layer, and a pad electrode which is formed on the translucent electrode, wherein the translucent electrode includes a recessed part on which the pad electrode is mounted, and wherein a thickness of a bottom surface of the recessed part of the translucent electrode is more than 0% of and equal to or less than 70% of a thickness of a part of the translucent electrode other than the recessed part.

    Abstract translation: 提供了一种半导体元件，包括半导体层，形成在半导体层上的透光性电极和形成在透光性电极上的焊盘电极，其中，所述透光性电极包括其上安装有焊盘电极的凹部， 并且其中，所述透光性电极的所述凹部的底面的厚度比所述凹部以外的所述透光性电极的一部分的厚度的0％以下且在70％以下。

    SEMICONDUCTOR LIGHT EMITTING ELEMENT
    3.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权

    公开(公告)号：US20210119094A1

    公开(公告)日：2021-04-22

    申请号：US17115082

    申请日：2020-12-08

    Applicant: NICHIA CORPORATION

    Inventor： Yasuhiro MIKI ,  Koichi TAKENAGA

    IPC: H01L33/62 ,  H01L33/36

    Abstract: A semiconductor light emitting element includes a semiconductor layered body including an n-side semiconductor layer and a p-side semiconductor layer disposed above the n-side semiconductor layer, an insulating film defining a plurality of first n-side openings on the n-side semiconductor layer in an inner region and a plurality of second n-side openings on an outer peripheral region of the n-side semiconductor layer, an n-electrode disposed extending over the insulating film and the outer peripheral region of the n-side semiconductor layer and including: a plurality of first n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the first n-side openings, and a plurality of second n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the second n-side openings, at the outer peripheral region of the n-side semiconductor layer.

    SEMICONDUCTOR LIGHT EMITTING ELEMENT
    4.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING ELEMENT 审中-公开

    公开(公告)号：US20200044128A1

    公开(公告)日：2020-02-06

    申请号：US16526895

    申请日：2019-07-30

    Applicant: Nichia Corporation

    Inventor： Yasuhiro MIKI ,  Koichi TAKENAGA

    IPC: H01L33/62 ,  H01L33/36

    Abstract: A semiconductor light emitting element includes a semiconductor layered body including an n-side semiconductor layer and a p-side semiconductor layer disposed above the n-side semiconductor layer, an insulating film defining a plurality of first n-side openings on the n-side semiconductor layer in an inner region and a plurality of second n-side openings on an outer peripheral region of the n-side semiconductor layer, an n-electrode disposed extending over the insulating film and the outer peripheral region of the n-side semiconductor layer and including: a plurality of first n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the first n-side openings, and a plurality of second n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the second n-side openings, at at least four corners of the outer peripheral region of the n-side semiconductor layer.

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