公开(公告)号：US20150280071A1

公开(公告)日：2015-10-01

申请号：US14669345

申请日：2015-03-26

Applicant: NICHIA CORPORATION

Inventor： Koichi TAKENAGA ,  Hirofumi KAWAGUCHI ,  Kazuki KASHIMOTO

IPC: H01L33/38 ,  H01L33/52 ,  H01L33/62

CPC classification number: H01L33/387 ,  H01L33/382 ,  H01L33/40 ,  H01L33/44 ,  H01L33/54 ,  H01L33/62

Abstract: A light emitting element includes a semiconductor stacked layer body having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer in this order, and a plurality of exposed portions defined at an upper surface side of the semiconductor stacked layer body, the plurality of exposed portions respectively exposing a part of the n-type semiconductor layer, a p-side electrode arranged in a first region and electrically connected with an upper surface of the p-type semiconductor layer and, arranged at one corner above the p-type semiconductor layer in a plan view, and an n-side electrode electrically integrally connected to the plurality of exposed portions and arranged in a different region in a plan view. In a plan view, the semiconductor stacked layer body has a rectangular shape and the plurality of exposed portions includes, a plurality of first exposed portions arranged at substantially equal intervals along a side of the semiconductor stacked layer body and a plurality of second exposed portions arranged closer to the p-side electrode than the first exposed portions are to the p-side electrode. The plurality of second exposed portions include at least one second exposed portion which has a shortest distance to the first exposed portions, the shortest distance to the first exposed portions being longer than a shortest distance among the first exposed portions. The at least one second exposed portion also has a shortest distance to the p-side electrode shorter than the shortest distance among the first exposed portions.

Abstract translation: 发光元件依次包括具有n型半导体层，有源层和p型半导体层的半导体叠层体，以及限定在半导体层叠层的上表面侧的多个露出部 所述多个曝光部分分别暴露所述n型半导体层的一部分，布置在第一区域中并与p型半导体层的上表面电连接的p侧电极，并且布置在 平面图中的p型半导体层和与多个暴露部分电连接并且以平面图形式布置在不同区域中的n侧电极。 在平面图中，半导体层叠体具有矩形形状，并且多个露出部分包括沿着半导体堆叠层主体的侧面以大致相等的间隔布置的多个第一暴露部分和多个第二暴露部分， 比p侧电极更靠近p侧电极。 多个第二暴露部分包括至少一个与第一暴露部分具有最短距离的第二暴露部分，第一暴露部分的最短距离比第一暴露部分中的最短距离长。 所述至少一个第二暴露部分也具有比所述第一暴露部分中的最短距离短的至p侧电极的最短距离。

公开(公告)号：US20200044128A1

公开(公告)日：2020-02-06

申请号：US16526895

申请日：2019-07-30

Applicant: Nichia Corporation

Inventor： Yasuhiro MIKI ,  Koichi TAKENAGA

IPC: H01L33/62 ,  H01L33/36

Abstract: A semiconductor light emitting element includes a semiconductor layered body including an n-side semiconductor layer and a p-side semiconductor layer disposed above the n-side semiconductor layer, an insulating film defining a plurality of first n-side openings on the n-side semiconductor layer in an inner region and a plurality of second n-side openings on an outer peripheral region of the n-side semiconductor layer, an n-electrode disposed extending over the insulating film and the outer peripheral region of the n-side semiconductor layer and including: a plurality of first n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the first n-side openings, and a plurality of second n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the second n-side openings, at at least four corners of the outer peripheral region of the n-side semiconductor layer.

公开(公告)号：US20200212278A1

公开(公告)日：2020-07-02

申请号：US16717305

申请日：2019-12-17

Applicant: NICHIA CORPORATION

Inventor： Koichi TAKENAGA ,  Takanori FUKUMORI ,  Satoshi SHICHIJO ,  Hiroki FUKUTA ,  Kunihito SUGIMOTO

IPC: H01L33/62 ,  H01L33/32 ,  H01L33/44 ,  H01L33/38 ,  H01L33/60 ,  H01L33/00 ,  H01L27/15 ,  H01L33/22 ,  H01L33/56 ,  H01L33/40 ,  H01L33/64

Abstract: A light emitting element includes a semiconductor stacked body, an insulating film, first and second electrodes, a second external connection portion, and first external connection portions. The first semiconductor layer is exposed at a plurality of exposed portions disposed in a plurality of rows in plan view. The first external connection portions include at least one smaller-size first external connection portion disposed between adjacent ones of the rows other than the outermost one of the rows, and at least one larger-size first external connection portion extending from the end region, in which a spacing between a first outer edge of a second semiconductor layer and the exposed portions in the outermost one of the rows is narrower than a spacing between the exposed portions in adjacent ones of the rows, to at least a position between the outermost one of the rows and an adjacent one of the rows.

公开(公告)号：US20170365738A1

公开(公告)日：2017-12-21

申请号：US15695362

申请日：2017-09-05

Applicant: NICHIA CORPORATION

Inventor： Koichi TAKENAGA ,  Keiji EMURA

IPC: H01L33/20 ,  H01L33/50 ,  H01L33/38 ,  H01L33/58 ,  H01L33/44 ,  H01L33/40 ,  H01L33/62

CPC classification number: H01L33/20 ,  H01L33/38 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L33/50 ,  H01L33/58 ,  H01L33/62

Abstract: A light emitting element includes an n-side semiconductor layer, a p-side semiconductor layer, a plurality of holes, a first p-electrode, a second p-electrode and an n-electrode. The n-side semiconductor layer has a hexagonal shape in plan view. The p-side semiconductor layer has a hexagonal shape in plan view and provided over the n-side semiconductor layer. The holes are arranged in the p-side semiconductor layer so that the n-side semiconductor layer is exposed through the plurality of holes. The first p-electrode is in contact with the p-side semiconductor layer. The second p-electrode is arranged on the first p-electrode adjacent to a corner corresponding to one of vertices of the hexagonal shape. The second p-electrode has sides that are respectively parallel to sides defining the corner in plan view. The n-electrode is arranged over the first p-electrode and is electrically connected to the n-side semiconductor layer through the plurality of holes.

公开(公告)号：US20230207763A1

公开(公告)日：2023-06-29

申请号：US18064599

申请日：2022-12-12

Applicant: NICHIA CORPORATION

Inventor： Koichi TAKENAGA

IPC: H01L33/62 ,  H01L33/40

CPC classification number: H01L33/62 ,  H01L33/405

Abstract: A light-emitting element includes a semiconductor structure including a first semiconductor layer, an active layer, and a second semiconductor layer, an insulating film, a first electrode, a second electrode, a plurality of first conductive members, and a plurality of second conductive members. A plurality of first regions at an upper surface of the first semiconductor layer are aligned in a first direction. A first electrode region of the first electrode includes a plurality of first portions covering the plurality of first regions and a second portion positioned between the first portions adjacent to each other. The first portion includes a plurality of first extending portions extending in a direction toward the second electrode with respect to the second portion. The second electrode includes a plurality of first recessed portions corresponding to the plurality of the first extending portions, respectively.

公开(公告)号：US20210119094A1

公开(公告)日：2021-04-22

申请号：US17115082

申请日：2020-12-08

Applicant: NICHIA CORPORATION

Inventor： Yasuhiro MIKI ,  Koichi TAKENAGA

IPC: H01L33/62 ,  H01L33/36

Abstract: A semiconductor light emitting element includes a semiconductor layered body including an n-side semiconductor layer and a p-side semiconductor layer disposed above the n-side semiconductor layer, an insulating film defining a plurality of first n-side openings on the n-side semiconductor layer in an inner region and a plurality of second n-side openings on an outer peripheral region of the n-side semiconductor layer, an n-electrode disposed extending over the insulating film and the outer peripheral region of the n-side semiconductor layer and including: a plurality of first n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the first n-side openings, and a plurality of second n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the second n-side openings, at the outer peripheral region of the n-side semiconductor layer.

公开(公告)号：US20170033262A1

公开(公告)日：2017-02-02

申请号：US15204395

申请日：2016-07-07

Applicant: NICHIA CORPORATION

Inventor： Koichi TAKENAGA ,  Keiji EMURA

IPC: H01L33/20 ,  H01L33/50 ,  H01L33/38 ,  H01L33/58

CPC classification number: H01L33/20 ,  H01L33/38 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L33/50 ,  H01L33/58 ,  H01L33/62

Abstract: A light emitting element with a hexagonal planar shape, has: an n-side semiconductor layer; a p-side semiconductor layer provided on the n-side semiconductor layer; a plurality of holes that are provided to an area excluding three corners at mutually diagonal positions of the p-side semiconductor layer in plan view, and expose the n-side semiconductor layer; a first p-electrode provided in contact with the p-side semiconductor layer; second p-electrodes provided to three corners on the first p-electrode; and an n-electrode that is provided on the first p-electrode and is electrically connected to the n-side semiconductor layer through the plurality of holes.

Abstract translation: 具有六边形平面形状的发光元件具有：n侧半导体层; 设置在n侧半导体层上的p侧半导体层; 在俯视图中，设置在p侧半导体层的相互对角位置的除了三角以外的区域的多个孔，露出n侧半导体层; 设置为与p侧半导体层接触的第一p电极; 设置在第一p电极上的三个角的第二p电极; 以及n电极，其设置在所述第一p电极上，并且通过所述多个孔与所述n侧半导体层电连接。