公开(公告)号：US20210090914A1

公开(公告)日：2021-03-25

申请号：US17009166

申请日：2020-09-01

Applicant: NICHIA CORPORATION

Inventor： Haruhiko NISHIKAGE ,  Yoshinori MIYAMOTO ,  Yasunobu HOSOKAWA

IPC: H01L21/67 ,  H01L21/78

Abstract: A method for manufacturing a semiconductor element includes: providing a wafer comprising first and second regions at an upper surface of the wafer, the second region being located at a periphery of the first region and being at a lower position than the first region; and forming a semiconductor layer made of a nitride semiconductor at the upper surface of the wafer. In a top-view, the first region comprises an extension portion at an end portion of the first region in a first direction that passes through the center of the wafer parallel to an m-axis of the semiconductor layer, the extension portion extending in a direction from a center of the wafer toward an edge of the wafer or in a direction from an edge of the wafer toward a center of the wafer.

公开(公告)号：US20200279730A1

公开(公告)日：2020-09-03

申请号：US16802782

申请日：2020-02-27

Applicant: NICHIA CORPORATION

Inventor： Haruhiko NISHIKAGE ,  Yoshinori MIYAMOTO ,  Yasunobu HOSOKAWA

IPC: H01L21/02 ,  H01L21/78

Abstract: A method of manufacturing semiconductor elements includes: disposing a semiconductor layer made of a nitride semiconductor on a first wafer; and bonding a second wafer to the first wafer via the semiconductor layer. The first wafer has an upper surface including a first region and a second region surrounding a periphery of the first region and located lower than the first region. In a top view of the first wafer, a first distance between an edge of the first wafer and the first region of the first wafer in each of a plurality of first directions parallel to respective m-axes of the semiconductor layer is smaller than a second distance between the edge of the first wafer and the first region of the first wafer in each of a plurality of second directions parallel to respective a-axes of the semiconductor layer.

公开(公告)号：US20190296190A1

公开(公告)日：2019-09-26

申请号：US16354056

申请日：2019-03-14

Applicant: NICHIA CORPORATION

Inventor： Yoshinori MIYAMOTO ,  Tokutaro OKABE ,  Yuya KAGOSHIMA ,  Keisuke HIGASHITANI ,  Chiaki OZAKI

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32

Abstract: A method for manufacturing a semiconductor device includes: preparing a wafer including sapphire, the wafer having an upper surface that includes a first region and a second region, the second region surrounding the first region and located at a position at least 2 μm higher or lower than the first region; and forming a semiconductor layer at the upper surface, the semiconductor layer including at least one layer that comprises AlzGa1-zN (0.03≤z≤0.15).