Ion source
    1.
    发明授权

    公开(公告)号:US10600608B1

    公开(公告)日:2020-03-24

    申请号:US16353475

    申请日:2019-03-14

    IPC分类号: H01J7/24 H05B31/26 H01J27/02

    摘要: An ion source is provided. The ion source includes a plasma generation chamber, a plate member, and an extraction electrode. The plasma generation chamber is supplied with a halogen-containing material. The plate member is provided on an end of the plasma generation chamber located on a side toward which an ion beam is extracted. The extraction electrode is disposed downstream of the plate member. The plate member is formed with a gas supply passage via which hydrogen gas is supplied to the extraction electrode.

    Substrate holding device, semiconductor fabrication device, and substrate clamping ascertainment method

    公开(公告)号:US09601359B2

    公开(公告)日:2017-03-21

    申请号:US14333798

    申请日:2014-07-17

    IPC分类号: H01L21/683 H01L21/67

    摘要: A substrate holding device is provided with an electrostatic chuck that has an electrode therein and is provided with a substrate holding surface, on one side of which a substrate is held; a displacement gauge that is disposed above or below the substrate holding surface; and a controller which, along with using the displacement gauge to measure a first distance to the substrate when a substrate is placed on the substrate holding surface, uses the displacement gauge to measure a second distance to the substrate after a predetermined voltage is applied to the electrode of the electrostatic chuck and, based on the difference between the measured distances, ascertains whether the clamping of the substrate to the electrostatic chuck has been performed in a normal manner.