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公开(公告)号:US10600608B1
公开(公告)日:2020-03-24
申请号:US16353475
申请日:2019-03-14
发明人: Masakazu Adachi , Shigeki Sakai , Yuya Hirai , Takayuki Murayama , Tomoya Taniguchi , Weijiang Zhao
摘要: An ion source is provided. The ion source includes a plasma generation chamber, a plate member, and an extraction electrode. The plasma generation chamber is supplied with a halogen-containing material. The plate member is provided on an end of the plasma generation chamber located on a side toward which an ion beam is extracted. The extraction electrode is disposed downstream of the plate member. The plate member is formed with a gas supply passage via which hydrogen gas is supplied to the extraction electrode.
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公开(公告)号:US11749501B2
公开(公告)日:2023-09-05
申请号:US17468879
申请日:2021-09-08
发明人: Jian Wang , Shinsuke Inoue , Yuta Iwanami , Takashi Sakamoto , Weijiang Zhao
IPC分类号: H01J37/20 , H01J37/317 , H01J37/304
CPC分类号: H01J37/3171 , H01J37/20 , H01J37/304 , H01J2237/31706
摘要: An ion implantation apparatus includes a transfer device that transfers a wafer, a support device that supports the wafer at an implantation position, and a control device that controls the ion implantation apparatus to perform chain implantation processing on the wafer, and that controls the transfer device or the support device according to warpage information of the wafer.
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公开(公告)号:US09601359B2
公开(公告)日:2017-03-21
申请号:US14333798
申请日:2014-07-17
发明人: Weijiang Zhao , Kazuki Tobikawa
IPC分类号: H01L21/683 , H01L21/67
CPC分类号: H01L21/67259 , H01L21/67288 , H01L21/6831
摘要: A substrate holding device is provided with an electrostatic chuck that has an electrode therein and is provided with a substrate holding surface, on one side of which a substrate is held; a displacement gauge that is disposed above or below the substrate holding surface; and a controller which, along with using the displacement gauge to measure a first distance to the substrate when a substrate is placed on the substrate holding surface, uses the displacement gauge to measure a second distance to the substrate after a predetermined voltage is applied to the electrode of the electrostatic chuck and, based on the difference between the measured distances, ascertains whether the clamping of the substrate to the electrostatic chuck has been performed in a normal manner.
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公开(公告)号:US20220189736A1
公开(公告)日:2022-06-16
申请号:US17468879
申请日:2021-09-08
发明人: Jian WANG , Shinsuke Inoue , Yuta Iwanami , Takashi Sakamoto , Weijiang Zhao
IPC分类号: H01J37/317 , H01J37/20 , H01J37/304
摘要: An ion implantation apparatus includes a transfer device that transfers a wafer, a support device that supports the wafer at an implantation position, and a control device that controls the ion implantation apparatus to perform chain implantation processing on the wafer, and that controls the transfer device or the support device according to warpage information of the wafer.
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