公开(公告)号：US11914177B2

公开(公告)日：2024-02-27

申请号：US17911915

申请日：2021-03-15

Applicant: NITTO DENKO CORPORATION

Inventor： Masato Katsuda ,  Yudai Numata ,  Shoichi Matsuda

IPC: G02B5/20

CPC classification number: G02B5/206 ,  G02B5/208

Abstract: Disclosed is an optical filter with L* measured by the SCE method being 20 or greater, wherein: the linear transmittance with respect to light with wavelengths being at least a portion of a wavelength range from 760 nm to 2000 nm is 60% or greater; and, before and after a light resistance test wherein light of a xenon arc lamp (average integrated illuminance of light with wavelengths from 300 nm to 400 nm:120 W/m2) is shone for 300 hours, the absolute value of a change in C* measured by the SCE method using a spectroscopic colorimeter is 6 or less.

公开(公告)号：US11959000B2

公开(公告)日：2024-04-16

申请号：US18018177

申请日：2022-06-15

Applicant: WAKAYAMA PREFECTURE ,  NITTO DENKO CORPORATION

Inventor： Takeshi Mori ,  Tomohiro Mori ,  Akane Saito ,  Tsuyoshi Masuda ,  Hitoshi Saomoto ,  Mami Kawaguchi ,  Minoru Miyatake ,  Shoichi Matsuda ,  Masato Katsuda

IPC: C09K11/06 ,  C08J5/18 ,  C08J9/00 ,  C08J9/28 ,  C08K5/00 ,  C08K5/01 ,  C08K5/06 ,  C08K5/092 ,  C08K5/45 ,  C09K11/02

CPC classification number: C09K11/06 ,  C08J5/18 ,  C08J9/0023 ,  C08J9/0033 ,  C08J9/0052 ,  C08J9/283 ,  C08K5/0091 ,  C08K5/01 ,  C08K5/06 ,  C08K5/092 ,  C08K5/45 ,  C09K11/02 ,  C08J2201/0504 ,  C08J2301/28 ,  C08J2325/06 ,  C08J2325/18 ,  C08J2329/04 ,  C08J2333/12 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1018

Abstract: Provided are a photon up-conversion film, which is capable, of high-efficiency up-conversion even in air and even when low-intensity light is used, and a simple method of producing the film. The photon up-conversion film according to one embodiment of the present invention includes: a matrix including a resin; and a pore portion, wherein the photon up-conversion film includes at least a sensitizing component capable of absorbing light in a first wavelength region λ1, and a light-emitting component capable of radiating light in a second wavelength region λ2 including wavelengths shorter than those of the first wavelength region λ1, and wherein the sensitizing component and the light-emitting component are present at an interface between the matrix and the pore portion.

公开(公告)号：US11914180B2

公开(公告)日：2024-02-27

申请号：US17911875

申请日：2021-03-15

Applicant: NITTO DENKO CORPORATION

Inventor： Yudai Numata ,  Masato Katsuda ,  Shoichi Matsuda

IPC: G02B5/08 ,  G02B5/02 ,  G02B5/20 ,  G02B5/26 ,  G02B5/28

CPC classification number: G02B5/26 ,  G02B5/0242 ,  G02B5/0284 ,  G02B5/208

Abstract: An optical filter has a back-scattering property. The linear transmittance thereof to light of at least some avelengths in the wavelength range of 760-2000 nm is 60% or higher. The azimuth is 20° from an incidence plane when the polar angle of the direction of incidence of incident light is 0°. The value of a bidirectional reflectance distribution function in the direction ‘here the polar angle is −60’ is BRDF (0°; 20°, −60°). The azimuth is 20° from an incidence plane when the polar angle of the direction of incidence of incident light is 30°. The value of a bidirectional reflectance distribution function in the direction where the polar angle is −60° is BRDF (30°; 20°, −60°). The azimuth is 20° from an incidence plane when the polar angle of the direction of incidence of incident light is 60°.

公开(公告)号：US11914176B2

公开(公告)日：2024-02-27

申请号：US17911889

申请日：2021-03-15

Applicant: NITTO DENKO CORPORATION

Inventor： Yudai Numata ,  Masato Katsuda ,  Shoichi Matsuda

IPC: G02B5/20

CPC classification number: G02B5/206 ,  G02B5/208

Abstract: This optical filter 10 has an L* of at least 20 as measured by the SCE method, wherein the linear transmittance is at least 60% with respect to light the wavelength of which falls at least partially within the wavelength range of 760 nm-2,000 nm, and the temperature, at which the optical filter contracts by being heated, is at least 85° C.

公开(公告)号：US20240059960A1

公开(公告)日：2024-02-22

申请号：US18018177

申请日：2022-06-15

Applicant: WAKAYAMA PREFECTURE ,  NITTO DENKO CORPORATION

Inventor： Takeshi Mori ,  Tomohiro Mori ,  Akane Saito ,  Tsuyoshi Masuda ,  Hitoshi Saomoto ,  Mami Kawaguchi ,  Minoru Miyatake ,  Shoichi Matsuda ,  Masato Katsuda

IPC: C09K11/06 ,  C09K11/02 ,  C08K5/00 ,  C08K5/01 ,  C08K5/45 ,  C08K5/092 ,  C08K5/06 ,  C08J5/18 ,  C08J9/28 ,  C08J9/00

CPC classification number: C09K11/06 ,  C09K11/02 ,  C08K5/0091 ,  C08K5/01 ,  C08K5/45 ,  C08K5/092 ,  C08K5/06 ,  C08J5/18 ,  C08J9/283 ,  C08J9/0052 ,  C08J9/0033 ,  C08J9/0023 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1018 ,  C08J2329/04 ,  C08J2301/28 ,  C08J2325/18 ,  C08J2333/12 ,  C08J2325/06 ,  C08J2201/0504 ,  C08J2205/05

Abstract: Provided are a photon up-conversion film, which is capable of high-efficiency up-conversion even in air and even when low-intensity light is used, and a simple method of producing the film. The photon up-conversion film according to one embodiment of the present invention includes: a matrix including a resin; and a pore portion, wherein the photon up-conversion film includes at least a sensitizing component capable of absorbing light in a first wavelength region λ1, and a light-emitting component capable of radiating light in a second wavelength region λ2 including wavelengths shorter than those of the first wavelength region λ1, and wherein the sensitizing component and the light-emitting component are present at an interface between the matrix and the pore portion.

公开(公告)号：US11696506B2

公开(公告)日：2023-07-04

申请号：US16497969

申请日：2018-03-08

Applicant: NITTO DENKO CORPORATION

Inventor： Masaharu Arimoto ,  Hironobu Machinaga ,  Masato Katsuda ,  Manami Kurose

IPC: H01L41/08 ,  H01L41/047 ,  H01L41/113 ,  H01L41/187 ,  H01L41/316 ,  H01L41/319 ,  H10N30/00 ,  H10N30/076 ,  H10N30/079 ,  H10N30/30 ,  H10N30/853 ,  H10N30/87

CPC classification number: H10N30/10516 ,  H10N30/076 ,  H10N30/079 ,  H10N30/302 ,  H10N30/853 ,  H10N30/878

Abstract: A piezoelectric device has a layered structure in which at least a first electrode, a plastic layer, an orientation control layer, a piezoelectric layer, and a second electrode are stacked, wherein the orientation control layer is amorphous, and the piezoelectric layer with a thickness of 20 nm to 250 nm is provided over the orientation control layer, the piezoelectric layer having a wurtzite crystal structure, and wherein the orientation control layer and the piezoelectric layer are provided between the first electrode and the second electrode.