公开(公告)号：US20220158071A1

公开(公告)日：2022-05-19

申请号：US17439504

申请日：2020-03-10

Applicant: Nitto Denko Corporation

Inventor： Daisuke NAKAMURA ,  Naoki NAGAOKA ,  Taketo ISHIKAWA ,  Hironobu MACHINAGA

IPC: H01L41/047 ,  H01L41/08 ,  H01L41/187 ,  H01L41/29

Abstract: A piezo electric device having a configuration that can suppress the formation of a leakage path between electrodes that sandwich a piezoelectric layer and also reduce deterioration in the piezoelectric characteristics, is provided. The piezoelectric device has a first electrode, a piezoelectric layer, and a second electrode stacked in this order on a substrate. The first electrode and the second electrode are arranged so as not to overlap each other in the stacking direction.

公开(公告)号：US20220181542A1

公开(公告)日：2022-06-09

申请号：US17439806

申请日：2020-03-10

Applicant: Nitto Denko Corporation

Inventor： Daisuke NAKAMURA ,  Naoki NAGAOKA ,  Manami KUROSE ,  Taketo ISHIKAWA ,  Hironobu MACHINAGA

IPC: H01L41/08 ,  H01L41/047 ,  H01L41/187 ,  H01L41/29 ,  H01L41/316 ,  H01L41/319

Abstract: The occurrence of cracking in a functional layer is suppressed, while maintaining flexibility of a layered structure. The layered structure includes a polymer substrate, and a crystalline functional layer formed on the first surface of the substrate. The surface roughness of the first surface of the substrate is 3 nm or less in terms of arithmetic mean roughness (Ra).

公开(公告)号：US20240172564A1

公开(公告)日：2024-05-23

申请号：US18283607

申请日：2022-03-28

Applicant: NITTO DENKO CORPORATION

Inventor： Gaku TSUBURAOKA ,  Daisuke NAKAMURA ,  Taketo ISHIKAWA ,  Hironobu MACHINAGA

IPC: H10N30/853 ,  C04B35/453 ,  C30B23/08 ,  C30B25/06 ,  C30B29/16 ,  H10N30/076

CPC classification number: H10N30/853 ,  C04B35/453 ,  C30B23/08 ,  C30B25/06 ,  C30B29/16 ,  H10N30/076 ,  C04B2235/3206 ,  C04B2235/3284 ,  C04B2235/46 ,  C04B2235/762 ,  C04B2235/95

Abstract: A piezoelectric film contains a piezoelectric material having a wurtzite-type crystal structure as a main component, and an additive element containing Kr, wherein the piezoelectric material contains a component selected from the group consisting of Zn, Al, Ga, Cd, and Si, as an electropositive element, and wherein a ratio of a content of Kr element to a content of contained elements in the piezoelectric material is in a range from 0.01 atm % to 0.05 atm %.

公开(公告)号：US20230422397A1

公开(公告)日：2023-12-28

申请号：US18339005

申请日：2023-06-21

Applicant: NITTO DENKO CORPORATION

Inventor： Takahiro IKEDA ,  Taketo ISHIKAWA ,  Yuki TAKEDA ,  Hironori KUWAYAMA ,  Kyotaro YAMADA

IPC: H05K1/03 ,  H05K3/46

CPC classification number: H05K1/036 ,  H05K3/467 ,  H05K2203/0315

Abstract: A wiring circuit board includes a metal supporting board, first and second metal thin films, an insulating layer, and a conductive layer, where the resistance between the conductive layer and metal supporting board are lowered. The first metal thin film is disposed on one surface of the metal supporting board in the thickness direction, with the insulating layer having a through hole. The second metal thin film is disposed on one surface of the insulating layer in the thickness direction with the conductive layer disposed thereon. In the through hole, the first and second metal thin films, whose surfaces contact, are disposed between the metal supporting board and the conductive layer, and the other surface of the first metal thin film is in contact with the one surface of the metal supporting board. The other surface of the second metal thin film is in contact with the conductive layer.

公开(公告)号：US20230413431A1

公开(公告)日：2023-12-21

申请号：US18330058

申请日：2023-06-06

Applicant: NITTO DENKO CORPORATION

Inventor： Takahiro IKEDA ,  Kyotaro YAMADA ,  Taketo ISHIKAWA ,  Hironori KUWAYAMA ,  Yuki TAKEDA

IPC: H05K1/02 ,  H05K1/05 ,  H05K1/09 ,  H05K3/46 ,  H05K3/40

CPC classification number: H05K1/0298 ,  H05K1/05 ,  H05K1/09 ,  H05K3/4673 ,  H05K3/4038

Abstract: A wiring circuit board includes a metal supporting layer, a first metal thin film, an insulating layer including a through hole, a second metal thin film disposed on the first metal thin film in the through hole, and a conductive pattern electrically connected to the metal supporting layer through the first metal thin film and the second metal thin film in the through hole. The first metal thin film includes an oxide coating at least on a contact surface in contact with the insulating layer. In the central part of the through hole, the oxide coating has a thickness of 0 or a thickness smaller than a thickness of the oxide coating on the contact surface.

公开(公告)号：US20220085274A1

公开(公告)日：2022-03-17

申请号：US17279054

申请日：2019-09-27

Applicant: Nitto Denko Corporation

Inventor： Daisuke NAKAMURA ,  Naoki NAGAOKA ,  Manami KUROSE ,  Hironobu MACHINAGA ,  Taketo ISHIKAWA ,  Takahiko YANAGITANI ,  Takahiro SHIMIZU

IPC: H01L41/187 ,  H01L41/08 ,  H01L41/316 ,  C04B35/453 ,  C04B35/622

Abstract: A piezoelectric device having a high conversion efficiency between electrical energy and mechanical energy is provided. The piezoelectric device has first electrode, a second electrode, and a piezoelectric layer provided between the first electrode and the second electrode, wherein the piezoelectric layer is formed of a ZnO-based material having a wurtzite crystal structure to which a metal that does not cause the piezoelectric layer to exhibit conductivity is added, and wherein a squared value of a electromechanical coupling coefficient in thickness vibration mode is 6.5% or more.