NITRIDE LAMINATE AND MANUFACTURING METHOD OF THE SAME

    公开(公告)号:US20230121803A1

    公开(公告)日:2023-04-20

    申请号:US17911616

    申请日:2021-03-02

    Abstract: A nitride laminate, in which contamination in the nitride layer is suppressed and crystallinity is improved, is provided. A nitride laminate includes a polymer substrate, and a nitride layer provided on at least one of the surfaces of the polymer substrate. The nitride layer has a wurtzite crystal structure. The atomic proportion of oxygen in the nitride layer is 2.5 atm. % or less, and the atomic proportion of hydrogen in the nitride layer is 2.0 atm. % or less. The FWHM of the X-ray rocking curve of the nitride layer is 8 degree or less.

    TRANSPARENT CONDUCTIVE FILM
    7.
    发明申请
    TRANSPARENT CONDUCTIVE FILM 审中-公开
    透明导电膜

    公开(公告)号:US20160160345A1

    公开(公告)日:2016-06-09

    申请号:US14908855

    申请日:2015-05-15

    Abstract: Provided is a transparent conductive film that can drastically improving an electrical characteristic of a transparent conductive layer after crystallizing process with resped to the transparent conductive layer before the crystallizing process and can achieve a lower resistivity.The transparent conductive film (1) is provided with a film substrate (2) and a crystalline transparent conductive layer (3) formed on one of the main surfaces (2a) of the said substrate. The amorphous transparent conductive layer before the crystallizing process has a carrier density na×1019 of (10 to 60)×1019/cm3 and Hall mobility μa of 10 to 25 cm2/V·s, the crystalline transparent conductive layer after the crystallizing process has a carrier density nc×1019 of (80 to 150)×1019/cm3 and Hall mobility t of 20 to 40 cm2/V·s, and the length of motion L defined by {(nc−na)2+(μc−μa)2}1/2 is 50 to 150.

    Abstract translation: 提供一种透明导电膜,其可以在结晶处理之前,在透明导电层之后,在结晶处理之后,可以显着地改善透明导电层的电特性,并可以实现较低的电阻率。 透明导电膜(1)设置有形成在所述基板的一个主表面(2a)上的薄膜基板(2)和结晶透明导电层(3)。 结晶处理前的非晶透明导电层的(10〜60)×1019 / cm 3的载流子密度na×1019,10〜25cm2 / V·s的霍尔迁移率μa,结晶化后的结晶透明导电层具有 (80〜150)×1019 / cm 3的载流子密度nc×1019,20〜40cm2 / V·s的霍尔迁移率t和由{(nc-na)2+(μc-μa) )2} 1/2为50〜150。

    THERMOELECTRIC CONVERSION ELEMENT AND SENSOR

    公开(公告)号:US20250008841A1

    公开(公告)日:2025-01-02

    申请号:US18695936

    申请日:2022-09-27

    Abstract: A thermoelectric conversion element includes a magneto-thermoelectric conversion body and a wiring. The magneto-thermoelectric conversion body linearly extends. The wiring is electrically connected to the magneto-thermoelectric conversion body. In the thermoelectric conversion element, an absolute value |ΔS| of a difference between a Seebeck coefficient Sm in the length direction of the magneto-thermoelectric conversion body and a Seebeck coefficient Sc in the length direction of the wiring is 10 μV/K or less.

    ELECTROMAGNETIC WAVE TRANSMISSIVE METALLIC LUSTER FILM

    公开(公告)号:US20210078289A1

    公开(公告)日:2021-03-18

    申请号:US16961447

    申请日:2019-09-11

    Abstract: The object of the present invention is to provide an electromagnetic wave transmissive metallic luster film that has metallic luster and electromagnetic wave transmitting property, can be used in scratch-resistant situations and can utilize the original texture of an adherend during use of a product. The present invention relates to an electromagnetic wave transmissive metallic luster film including a substrate film, a metal layer formed on one surface of the substrate film and an adhesive layer formed on the metal layer, wherein the metal layer is a discontinuous layer comprising a metal, and the adhesive layer is a layer comprising a transparent adhesive.

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