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公开(公告)号:US20230121803A1
公开(公告)日:2023-04-20
申请号:US17911616
申请日:2021-03-02
Applicant: Nitto Denko Corporation
Inventor: Masahiko WATANABE , Toshitaka NAKAMURA , Hironobu MACHINAGA
Abstract: A nitride laminate, in which contamination in the nitride layer is suppressed and crystallinity is improved, is provided. A nitride laminate includes a polymer substrate, and a nitride layer provided on at least one of the surfaces of the polymer substrate. The nitride layer has a wurtzite crystal structure. The atomic proportion of oxygen in the nitride layer is 2.5 atm. % or less, and the atomic proportion of hydrogen in the nitride layer is 2.0 atm. % or less. The FWHM of the X-ray rocking curve of the nitride layer is 8 degree or less.
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公开(公告)号:US20200379153A1
公开(公告)日:2020-12-03
申请号:US16497149
申请日:2018-03-26
Applicant: NITTO DENKO CORPORATION
Inventor: Yosuke NAKANISHI , Eri UEDA , Hironobu MACHINAGA , Yutaka OHMORI
IPC: G02B5/28 , E06B9/24 , B32B17/06 , B32B7/12 , C03C17/245
Abstract: A heat-ray-transmission-controllable, light-transmissive base material is provided that includes a light-transmissive insolation-cutting unit configured to control transmission of light in at least a part of wavelength regions among wavelength regions of visible light and near-infrared light; and a transparent conductive oxide layer disposed over the light-transmissive insolation-cutting unit, containing a transparent conductive oxide.
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公开(公告)号:US20220085274A1
公开(公告)日:2022-03-17
申请号:US17279054
申请日:2019-09-27
Applicant: Nitto Denko Corporation
Inventor: Daisuke NAKAMURA , Naoki NAGAOKA , Manami KUROSE , Hironobu MACHINAGA , Taketo ISHIKAWA , Takahiko YANAGITANI , Takahiro SHIMIZU
IPC: H01L41/187 , H01L41/08 , H01L41/316 , C04B35/453 , C04B35/622
Abstract: A piezoelectric device having a high conversion efficiency between electrical energy and mechanical energy is provided. The piezoelectric device has first electrode, a second electrode, and a piezoelectric layer provided between the first electrode and the second electrode, wherein the piezoelectric layer is formed of a ZnO-based material having a wurtzite crystal structure to which a metal that does not cause the piezoelectric layer to exhibit conductivity is added, and wherein a squared value of a electromechanical coupling coefficient in thickness vibration mode is 6.5% or more.
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公开(公告)号:US20200381610A1
公开(公告)日:2020-12-03
申请号:US16497969
申请日:2018-03-08
Applicant: NITTO DENKO CORPORATION
Inventor: Masaharu ARIMOTO , Hironobu MACHINAGA , Masato KATSUDA , Manami KUROSE
IPC: H01L41/08 , H01L41/047 , H01L41/113 , H01L41/187 , H01L41/316 , H01L41/319
Abstract: A piezoelectric device has a layered structure in which at least a first electrode, a plastic layer, an orientation control layer, a piezoelectric layer, and a second electrode are stacked, wherein the orientation control layer is amorphous, and the piezoelectric layer with a thickness of 20 nm to 250 nm is provided over the orientation control layer, the piezoelectric layer having a wurtzite crystal structure, and wherein the orientation control layer and the piezoelectric layer are provided between the first electrode and the second electrode.
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公开(公告)号:US20230137503A1
公开(公告)日:2023-05-04
申请号:US17910428
申请日:2021-03-08
Applicant: NITTO DENKO CORPORATION
Inventor: Xiaolei CHEN , Taichi WATANABE , Hironobu MACHINAGA , Kazuto YAMAGATA
Abstract: The present invention relates to an electromagnetically transparent metallic-luster member including a base and a metal layer formed over the base, wherein the metal layer includes a plurality of portions which are at least partly discontinuous and separate from each other, the metal layer includes a portion including aluminum element and a portion including indium element, the portion including indium element localizes in the metal layer, and a volume content (vol %) of the portion including indium element in the metal layer is 5-40 vol %.
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公开(公告)号:US20220158071A1
公开(公告)日:2022-05-19
申请号:US17439504
申请日:2020-03-10
Applicant: Nitto Denko Corporation
Inventor: Daisuke NAKAMURA , Naoki NAGAOKA , Taketo ISHIKAWA , Hironobu MACHINAGA
IPC: H01L41/047 , H01L41/08 , H01L41/187 , H01L41/29
Abstract: A piezo electric device having a configuration that can suppress the formation of a leakage path between electrodes that sandwich a piezoelectric layer and also reduce deterioration in the piezoelectric characteristics, is provided. The piezoelectric device has a first electrode, a piezoelectric layer, and a second electrode stacked in this order on a substrate. The first electrode and the second electrode are arranged so as not to overlap each other in the stacking direction.
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公开(公告)号:US20160160345A1
公开(公告)日:2016-06-09
申请号:US14908855
申请日:2015-05-15
Applicant: NITTO DENKO CORPORATION
Inventor: Kodai MIYAMOTO , Kazuaki SASA , Hironobu MACHINAGA , Eri UEDA , Manami KUROSE , Tomotake NASHIKI
CPC classification number: C23C14/58 , B32B7/02 , B32B9/00 , C23C14/08 , C23C14/086 , C23C14/35 , C23C14/5806 , H01B1/02 , H01B3/426 , H01B3/427 , H01L31/022466
Abstract: Provided is a transparent conductive film that can drastically improving an electrical characteristic of a transparent conductive layer after crystallizing process with resped to the transparent conductive layer before the crystallizing process and can achieve a lower resistivity.The transparent conductive film (1) is provided with a film substrate (2) and a crystalline transparent conductive layer (3) formed on one of the main surfaces (2a) of the said substrate. The amorphous transparent conductive layer before the crystallizing process has a carrier density na×1019 of (10 to 60)×1019/cm3 and Hall mobility μa of 10 to 25 cm2/V·s, the crystalline transparent conductive layer after the crystallizing process has a carrier density nc×1019 of (80 to 150)×1019/cm3 and Hall mobility t of 20 to 40 cm2/V·s, and the length of motion L defined by {(nc−na)2+(μc−μa)2}1/2 is 50 to 150.
Abstract translation: 提供一种透明导电膜,其可以在结晶处理之前,在透明导电层之后,在结晶处理之后,可以显着地改善透明导电层的电特性,并可以实现较低的电阻率。 透明导电膜(1)设置有形成在所述基板的一个主表面(2a)上的薄膜基板(2)和结晶透明导电层(3)。 结晶处理前的非晶透明导电层的(10〜60)×1019 / cm 3的载流子密度na×1019,10〜25cm2 / V·s的霍尔迁移率μa,结晶化后的结晶透明导电层具有 (80〜150)×1019 / cm 3的载流子密度nc×1019,20〜40cm2 / V·s的霍尔迁移率t和由{(nc-na)2+(μc-μa) )2} 1/2为50〜150。
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公开(公告)号:US20250008841A1
公开(公告)日:2025-01-02
申请号:US18695936
申请日:2022-09-27
Applicant: NITTO DENKO CORPORATION
Inventor: Manami KUROSE , Yosuke NAKANISHI , Hirokazu TANAKA , Hironobu MACHINAGA
IPC: H10N15/20
Abstract: A thermoelectric conversion element includes a magneto-thermoelectric conversion body and a wiring. The magneto-thermoelectric conversion body linearly extends. The wiring is electrically connected to the magneto-thermoelectric conversion body. In the thermoelectric conversion element, an absolute value |ΔS| of a difference between a Seebeck coefficient Sm in the length direction of the magneto-thermoelectric conversion body and a Seebeck coefficient Sc in the length direction of the wiring is 10 μV/K or less.
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公开(公告)号:US20220181542A1
公开(公告)日:2022-06-09
申请号:US17439806
申请日:2020-03-10
Applicant: Nitto Denko Corporation
Inventor: Daisuke NAKAMURA , Naoki NAGAOKA , Manami KUROSE , Taketo ISHIKAWA , Hironobu MACHINAGA
IPC: H01L41/08 , H01L41/047 , H01L41/187 , H01L41/29 , H01L41/316 , H01L41/319
Abstract: The occurrence of cracking in a functional layer is suppressed, while maintaining flexibility of a layered structure. The layered structure includes a polymer substrate, and a crystalline functional layer formed on the first surface of the substrate. The surface roughness of the first surface of the substrate is 3 nm or less in terms of arithmetic mean roughness (Ra).
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公开(公告)号:US20210078289A1
公开(公告)日:2021-03-18
申请号:US16961447
申请日:2019-09-11
Applicant: NITTO DENKO CORPORATION
Inventor: Takahiro NAKAI , Xiaolei CHEN , Hironobu MACHINAGA
Abstract: The object of the present invention is to provide an electromagnetic wave transmissive metallic luster film that has metallic luster and electromagnetic wave transmitting property, can be used in scratch-resistant situations and can utilize the original texture of an adherend during use of a product. The present invention relates to an electromagnetic wave transmissive metallic luster film including a substrate film, a metal layer formed on one surface of the substrate film and an adhesive layer formed on the metal layer, wherein the metal layer is a discontinuous layer comprising a metal, and the adhesive layer is a layer comprising a transparent adhesive.
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