公开(公告)号：US20210317598A1

公开(公告)日：2021-10-14

申请号：US17229066

申请日：2021-04-13

申请人： North Carolina A&T State University

发明人： Shanthi Iyer ,  Jia Li ,  Prithviraj Deshmukh ,  Manish Sharma

IPC分类号： C30B29/40 ,  C30B23/02 ,  C30B29/60

摘要： Compositions comprising Group V/III nanowires, and methods of making such nanowires are described. Some compositions comprise one or more core-shell nanowires comprising a core and a first shell surrounding or substantially surrounding the core. The core is formed from GaAs(1-y)Sby, where y=about 0.03-0.07 and the first shell is formed from GaAs(1-x)SbxN, where x=0.27-0.34. The nanowires have an average emission maximum of 1.4-1.7 μm. Some nanowires further comprise a second shell surrounding or substantially surrounding the first shell. The second shell is formed from a Group V/III material such as Ga1-mAlmAs, where m=0-0.2. Some nanowires have the structure GaAs(0.93-0.97)Sb(0.03-0.07)/GaAs(0.66-0.73)Sb(0.27-0.34)N/Ga(0.8-1)Al(0-0.2)As.

公开(公告)号：US20240218563A1

公开(公告)日：2024-07-04

申请号：US18425387

申请日：2024-01-29

申请人： North Carolina A&T State University

发明人： Shanthi Iyer ,  Jia Li ,  Prithviraj Deshmukh ,  Manish Sharma

IPC分类号： C30B29/40 ,  C30B23/02 ,  C30B29/60

CPC分类号： C30B29/403 ,  C30B23/02 ,  C30B29/40 ,  C30B29/605

摘要： Compositions comprising Group V/III nanowires, and methods of making such nanowires are described. Some compositions comprise one or more core-shell nanowires comprising a core and a first shell surrounding or substantially surrounding the core. The core is formed from GaAs(1−y)Sby, where y=about 0.03-0.07 and the first shell is formed from GaAs(1−x)SbxN, where x=0.27-0.34. The nanowires have an average emission maximum of 1.4-1.7 μm. Some nanowires further comprise a second shell surrounding or substantially surrounding the first shell. The second shell is formed from a Group V/III material such as Ga1−mAlmAs, where m=0-0.2. Some nanowires have the structure GaAs(0.93-0.97)Sb(0.03-0.07)/GaAS(0.66-0.73)Sb(0.27-0.34)N/Ga(0.8-1)Al(0-0.2)As.

公开(公告)号：US20210095199A1

公开(公告)日：2021-04-01

申请号：US17038175

申请日：2020-09-30

申请人： North Carolina A&T State University

发明人： Shanthi Iyer ,  Surya Ratna Kiran Nalamati ,  Jia Li

IPC分类号： C09K11/62 ,  C09K11/75 ,  C01B32/188 ,  C30B29/42 ,  C30B25/16

摘要： The presently disclosed subject matter relates generally to GaAs1−xSbx nanowires (NW) grown on a graphitic substrate, to methods of growing such nanowires, and to use of such nanowires in applications such as flexible near infrared photodetector.

公开(公告)号：US11905622B2

公开(公告)日：2024-02-20

申请号：US17229066

申请日：2021-04-13

申请人： North Carolina A&T State University

发明人： Shanthi Iyer ,  Jia Li ,  Prithviraj Deshmukh ,  Manish Sharma

IPC分类号： C30B29/40 ,  C30B29/60 ,  C30B23/02

CPC分类号： C30B29/403 ,  C30B23/02 ,  C30B29/40 ,  C30B29/605

摘要： Compositions comprising Group V/III nanowires, and methods of making such nanowires are described. Some compositions comprise one or more core-shell nanowires comprising a core and a first shell surrounding or substantially surrounding the core. The core is formed from GaAs(1-y)Sby, where y=about 0.03-0.07 and the first shell is formed from GaAs(1-x)SbxN, where x=0.27-0.34. The nanowires have an average emission maximum of 1.4-1.7 μm. Some nanowires further comprise a second shell surrounding or substantially surrounding the first shell. The second shell is formed from a Group V/III material such as Ga1-mAlmAs, where m=0-0.2. Some nanowires have the structure GaAs(0.93-0.97)Sb(0.03-0.07)/GaAs(0.66-0.73)Sb(0.27-0.34)N/Ga(0.8-1)Al(0-0.2)As.

公开(公告)号：US11384286B2

公开(公告)日：2022-07-12

申请号：US17038175

申请日：2020-09-30

申请人： North Carolina A&T State University

发明人： Shanthi Iyer ,  Surya Ratna Kiran Nalamati ,  Jia Li

IPC分类号： C09K11/62 ,  C09K11/75 ,  C01B32/188 ,  C30B29/42 ,  C30B25/16 ,  C30B29/60 ,  C30B29/40 ,  C09K11/74 ,  B82Y40/00 ,  B82Y20/00

摘要： The presently disclosed subject matter relates generally to GaAs1−xSbx nanowires (NW) grown on a graphitic substrate, to methods of growing such nanowires, and to use of such nanowires in applications such as flexible near infrared photodetector.

公开(公告)号：US20170130363A1

公开(公告)日：2017-05-11

申请号：US15343818

申请日：2016-11-04

申请人： NORTH CAROLINA A&T STATE UNIVERSITY

发明人： Shanthi Iyer ,  Pavan Kumar Kasanaboina ,  Jia Li

IPC分类号： C30B29/42 ,  C30B29/68 ,  C30B23/00 ,  C30B29/62 ,  C09K11/74 ,  C09K11/75

CPC分类号： C09K11/75 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C09K11/7492 ,  C30B11/12 ,  C30B29/403 ,  C30B29/60 ,  Y10S977/762 ,  Y10S977/896 ,  Y10S977/95

摘要： In one aspect, compositions comprising Group III-V nanowires, and methods of making such nanowires, are described herein. In some embodiments, a composition described herein comprises one or more core-shell nanowires comprising a core and a first shell surrounding or substantially surrounding the core. The core is formed from GaAs, and the first shell is formed from GaAs(1-x-y)SbxNy. Additionally, x is 0.08-0.15, and y is 0.005-0.035. In some cases, x is 0.10-0.17, and/or y is 0.01-0.02. Further, the nanowires have an average emission maximum of 1.25-1.35 μm. Moreover, in some instances, the nanowires further comprise a second shell surrounding or substantially surrounding the first shell. The second shell, in some embodiments, is formed from a Group III-V material such as GaAs. For example, in some instances, the nanowires have the structure GaAs/GaAs(0.82-0.9)Sb(0.09-0.15)N(0.005-0.033)/GaAs.