公开(公告)号：US11733035B2

公开(公告)日：2023-08-22

申请号：US17303834

申请日：2021-06-08

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： Heath Pois ,  Wei T Lee ,  Lawrence Bot ,  Michael Kwan ,  Mark Klare ,  Charles Larson

IPC: G01B15/02 ,  G01N23/2251 ,  G01N23/225 ,  G01N23/223 ,  G01N23/2273 ,  G01N23/22

CPC classification number: G01B15/02 ,  G01N23/223 ,  G01N23/225 ,  G01N23/2251 ,  G01N23/2273 ,  G01N23/22

Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.

公开(公告)号：US20180328871A1

公开(公告)日：2018-11-15

申请号：US15773145

申请日：2016-11-02

Applicant: Nova Measuring Instruments, Inc.

Inventor： Wei Ti Lee ,  Heath Pois ,  Mark Klare ,  Cornel Bozdog

IPC: G01N23/2273 ,  G01N23/2208 ,  G01B15/02

CPC classification number: G01N23/2273 ,  G01B11/06 ,  G01B15/02 ,  G01N23/2208 ,  G01N23/223 ,  G01N2223/305 ,  G01N2223/61 ,  G01N2223/633 ,  H01L22/12

Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).

公开(公告)号：US12066391B2

公开(公告)日：2024-08-20

申请号：US18206033

申请日：2023-06-05

Applicant: Nova Measuring Instruments, Inc.

Inventor： Wei Ti Lee ,  Heath Pois ,  Mark Klare ,  Cornel Bozdog

IPC: G01N23/223 ,  G01B11/06 ,  G01B15/02 ,  G01N23/2208 ,  G01N23/2273 ,  H01L21/66

CPC classification number: G01N23/2273 ,  G01B11/06 ,  G01B15/02 ,  G01N23/2208 ,  G01N23/223 ,  H01L22/12 ,  G01N2223/305 ,  G01N2223/61 ,  G01N2223/633

Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).

公开(公告)号：US11988502B2

公开(公告)日：2024-05-21

申请号：US18033324

申请日：2022-10-24

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： Heath Pois ,  Wei Ti Lee ,  Laxmi Warad ,  Dmitry Kislitsyn ,  Parker Lund ,  Benny Tseng ,  James Chen ,  Saurabh Singh

IPC: G01B15/02 ,  G01N23/2273 ,  H01L21/66

CPC classification number: G01B15/02 ,  G01N23/2273 ,  G01B2210/56 ,  G01N2223/085 ,  G01N2223/305 ,  G01N2223/6116 ,  G01N2223/633 ,  G01N2223/645 ,  H01L22/12

Abstract: A system to characterize a film layer within a measurement box is disclosed. The system obtains a first mixing fraction corresponding to a first X-ray beam, the mixing fraction represents a fraction of the first X-ray beam inside a measurement box of a wafer sample, the measurement box represents a bore structure disposed over a substrate and having a film layer disposed inside the bore structure. The system obtains a contribution value for the measurement box corresponding to the first X-ray beam, the contribution value representing a species signal outside the measurement box that contributes to a same species signal inside the measurement box. The system obtains a first measurement detection signal corresponding to a measurement of the measurement box using the first X-ray beam. The system determines a measurement value of the film layer based on the first measurement detection signal, the contribution value, and the first mixing fraction.

公开(公告)号：US11668663B2

公开(公告)日：2023-06-06

申请号：US16741515

申请日：2020-01-13

Applicant: Nova Measuring Instruments, Inc.

Inventor： Wei Ti Lee ,  Heath Pois ,  Mark Klare ,  Cornel Bozdog

IPC: G01N23/223 ,  G01N23/2208 ,  G01B11/06 ,  G01B15/02 ,  G01N23/2273 ,  H01L21/66

CPC classification number: G01N23/2273 ,  G01B11/06 ,  G01B15/02 ,  G01N23/223 ,  G01N23/2208 ,  H01L22/12 ,  G01N2223/305 ,  G01N2223/61 ,  G01N2223/633

Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).

公开(公告)号：US20230408430A1

公开(公告)日：2023-12-21

申请号：US18206033

申请日：2023-06-05

Applicant: Nova Measuring Instruments, Inc.

Inventor： Wei Ti Lee ,  Heath Pois ,  Mark Klare ,  Cornel Bozdog

IPC: G01N23/2273 ,  H01L21/66 ,  G01B11/06 ,  G01B15/02 ,  G01N23/2208 ,  G01N23/223

CPC classification number: G01N23/2273 ,  H01L22/12 ,  G01B11/06 ,  G01B15/02 ,  G01N23/2208 ,  G01N23/223 ,  G01N2223/305 ,  G01N2223/633 ,  G01N2223/61

Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).

公开(公告)号：US10533961B2

公开(公告)日：2020-01-14

申请号：US15773145

申请日：2016-11-02

Applicant: Nova Measuring Instruments, Inc.

Inventor： Wei Ti Lee ,  Heath Pois ,  Mark Klare ,  Cornel Bozdog

IPC: G01N23/227 ,  G01N23/223 ,  G01N23/22 ,  G01N23/2273 ,  G01B11/06 ,  G01B15/02 ,  G01N23/2208

Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).

公开(公告)号：US12281893B2

公开(公告)日：2025-04-22

申请号：US18668048

申请日：2024-05-17

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： Heath Pois ,  Wei Ti Lee ,  Laxmi Warad ,  Dmitry Kislitsyn ,  Parker Lund ,  Benny Tseng ,  James Chen ,  Saurabh Singh

IPC: G01B15/02 ,  G01N23/2273 ,  H01L21/66

Abstract: A system to characterize a film layer within a measurement box is disclosed. The system obtains a first mixing fraction corresponding to a first X-ray beam, the mixing fraction represents a fraction of the first X-ray beam inside a measurement box of a wafer sample, the measurement box represents a bore structure disposed over a substrate and having a film layer disposed inside the bore structure. The system obtains a contribution value for the measurement box corresponding to the first X-ray beam, the contribution value representing a species signal outside the measurement box that contributes to a same species signal inside the measurement box. The system obtains a first measurement detection signal corresponding to a measurement of the measurement box using the first X-ray beam. The system determines a measurement value of the film layer based on the first measurement detection signal, the contribution value, and the first mixing fraction.

公开(公告)号：US11874237B2

公开(公告)日：2024-01-16

申请号：US17114842

申请日：2020-12-08

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： Heath Pois ,  David Reed ,  Bruno Shueler ,  Rodney Smedt ,  Jeffrey Fanton

IPC: G01N23/201 ,  G01N23/207 ,  H01L21/66

CPC classification number: G01N23/201 ,  G01N23/207 ,  G01N2223/054 ,  H01L22/12

Abstract: A system and method for measuring a sample by X-ray reflectance scatterometry. The method may include impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles; and collecting at least a portion of the scattered X-ray beam.