公开(公告)号：US10403489B2

公开(公告)日：2019-09-03

申请号：US16039292

申请日：2018-07-18

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： David A. Reed ,  Bruno W. Schueler ,  Bruce H. Newcome ,  Rodney Smedt ,  Chris Bevis

IPC: H01J49/14 ,  H01L21/66 ,  G01N23/22 ,  G01Q10/04 ,  H01J49/26

Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass, spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).

公开(公告)号：US12165863B2

公开(公告)日：2024-12-10

申请号：US18469517

申请日：2023-09-18

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： David A. Reed ,  Bruno W. Schueler ,  Bruce H. Newcome ,  Rodney Smedt ,  Chris Bevis

IPC: G01N23/2258 ,  G01N23/22 ,  G01Q10/04 ,  H01J49/12 ,  H01J49/14 ,  H01J49/26 ,  H01L21/66

Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).

公开(公告)号：US20200088656A1

公开(公告)日：2020-03-19

申请号：US16686953

申请日：2019-11-18

Applicant: NOVA MEASURING INSTRUMENTS, INC.

Inventor： Heath A. Pois ,  David A. Reed ,  Bruno W. Schueler ,  Rodney Smedt ,  Jeffrey T. Fanton

IPC: G01N23/201

Abstract: Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.

公开(公告)号：US10481112B2

公开(公告)日：2019-11-19

申请号：US16181287

申请日：2018-11-05

Applicant: NOVA MEASURING INSTRUMENTS, INC.

Inventor： Heath A. Pois ,  David A. Reed ,  Bruno W. Schueler ,  Rodney Smedt ,  Jeffrey T. Fanton

IPC: G01N23/20 ,  G01N23/201 ,  H01L21/66

Abstract: Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.

公开(公告)号：US10119925B2

公开(公告)日：2018-11-06

申请号：US15451104

申请日：2017-03-06

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： Heath A. Pois ,  David A. Reed ,  Bruno W. Schueler ,  Rodney Smedt ,  Jeffrey T. Fanton

IPC: G01N23/201 ,  H01L21/66

Abstract: Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.

公开(公告)号：US11764050B2

公开(公告)日：2023-09-19

申请号：US17821785

申请日：2022-08-23

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： David A. Reed ,  Bruno W. Schueler ,  Bruce H. Newcome ,  Rodney Smedt ,  Chris Bevis

IPC: G01N23/2258 ,  G01N23/22 ,  H01J49/14 ,  H01L21/66 ,  H01J49/12 ,  G01Q10/04 ,  H01J49/26

CPC classification number: H01J49/142 ,  G01N23/22 ,  G01N23/2258 ,  G01Q10/04 ,  H01J49/126 ,  H01J49/26 ,  H01L22/12

Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).

公开(公告)号：US11430647B2

公开(公告)日：2022-08-30

申请号：US17164499

申请日：2021-02-01

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： David A. Reed ,  Bruno W. Schueler ,  Bruce H. Newcome ,  Rodney Smedt ,  Chris Bevis

IPC: H01J49/14 ,  H01L21/66 ,  H01J49/12 ,  G01N23/2258 ,  G01N23/22 ,  G01Q10/04 ,  H01J49/26

Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).

公开(公告)号：US10910208B2

公开(公告)日：2021-02-02

申请号：US16856940

申请日：2020-04-23

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： David A. Reed ,  Bruno W. Schueler ,  Bruce H. Newcome ,  Rodney Smedt ,  Chris Bevis

IPC: H01J49/14 ,  H01L21/66 ,  H01J49/12 ,  G01N23/22 ,  G01Q10/04 ,  H01J49/26

Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).

公开(公告)号：US10859519B2

公开(公告)日：2020-12-08

申请号：US16686953

申请日：2019-11-18

Applicant: NOVA MEASURING INSTRUMENTS, INC.

Inventor： Heath A. Pois ,  David A. Reed ,  Bruno W. Schueler ,  Rodney Smedt ,  Jeffrey T. Fanton

IPC: G01N23/201 ,  G01N23/207 ,  H01L21/66

Abstract: Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.

公开(公告)号：US10056242B2

公开(公告)日：2018-08-21

申请号：US15550014

申请日：2016-02-10

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： David A. Reed ,  Bruno W. Schueler ,  Bruce H. Newcome ,  Rodney Smedt ,  Chris Bevis

IPC: H01J49/14 ,  H01L21/66 ,  G01Q10/04 ,  G01N23/22 ,  H01J49/26

CPC classification number: H01J49/142 ,  G01N23/22 ,  G01Q10/04 ,  H01J49/26 ,  H01L22/12

Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).