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    FEED-FORWARD OF MULTI-LAYER AND MULTI-PROCESS INFORMATION USING XPS AND XRF TECHNOLOGIES
    1.
    发明申请
    FEED-FORWARD OF MULTI-LAYER AND MULTI-PROCESS INFORMATION USING XPS AND XRF TECHNOLOGIES 审中-公开

    公开(公告)号：US20190033069A1

    公开(公告)日：2019-01-31

    申请号：US16140340

    申请日：2018-09-24

    Applicant: NOVA MEASURING INSTRUMENTS, INC.

    Inventor： Heath A. Pois ,  Wei Ti Lee ,  Lawrence V. Bot ,  Michael C. Kwan ,  Mark Klare ,  Charles Thomas Larson

    IPC: G01B15/02 ,  G01N23/2273 ,  G01N23/223

    Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.

    Feed-forward of multi-layer and multi-process information using XPS and XRF technologies
    2.
    发明授权
    Feed-forward of multi-layer and multi-process information using XPS and XRF technologies 有权

    公开(公告)号：US10648802B2

    公开(公告)日：2020-05-12

    申请号：US16536132

    申请日：2019-08-08

    Applicant: NOVA MEASURING INSTRUMENTS, INC.

    Inventor： Heath A. Pois ,  Wei Ti Lee ,  Lawrence V. Bot ,  Michael C. Kwan ,  Mark Klare ,  Charles Thomas Larson

    IPC: G01B15/02 ,  G01N23/2251 ,  G01N23/225 ,  G01N23/223 ,  G01N23/2273 ,  G01N23/22

    Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.

    Feed-forward of multi-layer and multi-process information using XPS and XRF technologies
    3.
    发明授权
    Feed-forward of multi-layer and multi-process information using XPS and XRF technologies 有权

    公开(公告)号：US11029148B2

    公开(公告)日：2021-06-08

    申请号：US16872568

    申请日：2020-05-12

    Applicant: NOVA MEASURING INSTRUMENTS, INC.

    Inventor： Heath A. Pois ,  Wei Ti Lee ,  Lawrence V. Bot ,  Michael C. Kwan ,  Mark Klare ,  Charles Thomas Larson

    IPC: G01B15/02 ,  G01N23/2251 ,  G01N23/225 ,  G01N23/223 ,  G01N23/2273 ,  G01N23/22

    Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.

    FEED-FORWARD OF MULTI-LAYER AND MULTI-PROCESS INFORMATION USING XPS AND XRF TECHNOLOGIES
    5.
    发明申请
    FEED-FORWARD OF MULTI-LAYER AND MULTI-PROCESS INFORMATION USING XPS AND XRF TECHNOLOGIES 审中-公开

    公开(公告)号：US20200370885A1

    公开(公告)日：2020-11-26

    申请号：US16872568

    申请日：2020-05-12

    Applicant: NOVA MEASURING INSTRUMENTS, INC.

    Inventor： Heath A. Pois ,  Wei Ti Lee ,  Lawrence V. Bot ,  Michael C. Kwan ,  Mark Klare ,  Charles Thomas Larson

    IPC: G01B15/02 ,  G01N23/2251 ,  G01N23/225 ,  G01N23/223 ,  G01N23/2273

    Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.

    Method and system for monitoring deposition process
    6.
    发明授权
    Method and system for monitoring deposition process 有权

    公开(公告)号：US11852467B2

    公开(公告)日：2023-12-26

    申请号：US17438845

    申请日：2020-03-12

    Applicant: NOVA MEASURING INSTRUMENTS, INC.

    Inventor： Heath A. Pois ,  Laxmi Warad ,  Srinivasan Rangarajan

    IPC: G01B15/02 ,  G01N23/2273

    CPC classification number: G01B15/02 ,  G01N23/2273 ,  G01N2223/61

    Abstract: Quantification of the passivation and the selectivity in deposition process is disclosed. The passivation is evaluated by calculating film thicknesses on pattern lines and spaces. An XPS signal is used, which is normalized with X-ray flux number. The method is efficient for calculating thickness in selective deposition process, wherein the thickness can be used as metric to measure selectivity. Measured photoelectrons for each of the materials can be expressed as a function of the thickness of the material overlaying it, adjusted by material constant and effective attenuation length. In selective deposition over a patterned wafer, the three expressions can be solved to determine the thickness of the intended deposition and the thickness of any unintended deposition over passivated pattern.

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