公开(公告)号：US20020061715A1

公开(公告)日：2002-05-23

申请号：US10042244

申请日：2002-01-11

Applicant: Nu Tool Inc.

Inventor： Cyprian Uzoh ,  Bulent Basol ,  Homayoun Talieh

IPC: B24B001/00

CPC classification number: B24B37/042 ,  C25D3/38 ,  C25D7/12 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76877 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A modified plating solution that can be used to electroplate a high quality conductive material that can be effectively polished and planarized includes (1) a solvent, (2) an ionic species of the conductive material to be deposited, (3) at least one additive to improve electrical and structural properties, and (4) a modifying agent.

Abstract translation: 可用于电镀可以有效抛光和平坦化的高质量导电材料的改性电镀溶液包括（1）溶剂，（2）待沉积的导电材料的离子种类，（3）至少一种添加剂 改善电气和结构性能，和（4）改性剂。

公开(公告)号：US20010035354A1

公开(公告)日：2001-11-01

申请号：US09735546

申请日：2000-12-14

Applicant: Nu Tool Inc.

Inventor： Jalal Ashjaee ,  Boguslaw A. Nagorski ,  Bulent M. Basol ,  Homayoun Talieh ,  Cyprian Uzoh

IPC: C25D005/18 ,  B23H003/00 ,  C25D017/00 ,  C25F007/00 ,  C25F003/16 ,  C25D017/06 ,  C25D005/04

CPC classification number: C25D17/001 ,  C25D7/123 ,  C25D17/005 ,  C25F7/00 ,  H01L21/2885

Abstract: Deposition of conductive material on or removal of conductive material from a wafer frontal side of a semiconductor wafer is performed by providing an anode having an anode area which is to face the wafer frontal side, and electrically connecting the wafer frontal side with at least one electrical contact, outside of the anode area, by pushing the electrical contact and the wafer frontal side into proximity with each other. A potential is applied between the anode and the electrical contact, and the wafer is moved with respect to the anode and the electrical contact. Full-face electroplating or electropolishing over the wafer frontal side surface, in its entirety, is thus permitted.

Abstract translation: 通过提供具有面向晶片正面的阳极区域的阳极和将晶片正面与至少一个电气电连接来进行导电材料沉积在半导体晶片的晶片正面上或从晶片正面去除导电材料 通过将电接触和晶片正面推动到彼此靠近来接触阳极区域外部。 在阳极和电接触之间施加电势，并且晶片相对于阳极和电触点移动。 因此允许在整个晶片正面侧面上进行全面电镀或电解抛光。

公开(公告)号：US20020088715A1

公开(公告)日：2002-07-11

申请号：US10093185

申请日：2002-03-05

Applicant: NU-TOOL, INC.

Inventor： Homayoun Talieh ,  Bulent Basol

IPC: C25D007/12 ,  C25D017/00 ,  C25D011/32

CPC classification number: H01L21/6715 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/67075

Abstract: The present invention is directed to a method and apparatus for plating a surface of a semiconductor workpiece (wafer, flat panel, magnetic films, etc.) using a liquid conductor that makes contact with the outer surface of the workpiece. The liquid conductor is stored in a reservoir and pump through an inlet channel to the liquid chamber. The liquid conductor is injected into a liquid chamber such that the liquid conductor makes contact with the outer surface of the workpiece. An inflatable tube is also provided to prevent the liquid conductor from reaching the back face of the workpiece. A plating solution can be applied to the front face of the workpiece where a retaining ring/seal further prevents the plating solution and the liquid conductor from making contact with each other. In an alternative embodiment, electrical contacts may be formed using an inflatable tube that has either been coated with a conductive material or contains a conductive object. The inflatable tube further provides uniform contact and pressure along the periphery of the workpiece, which may not necessarily be perfectly flat, because the tube can conform according to the shape of the periphery of the workpiece. Further, the present invention can be used to dissolve/etch a metal layer from the periphery of the workpiece.

Abstract translation: 本发明涉及一种使用与工件的外表面接触的液体导体对半导体工件的表面（晶片，平板，磁性膜等）进行电镀的方法和装置。 液体导体储存在储存器中并通过入口通道泵送到液体室。 液体导体被注入到液体室中，使得液体导体与工件的外表面接触。 还设有可充气管以防止液体导体到达工件的背面。 可以将电镀液施加到工件的前表面，其中保持环/密封件进一步防止电镀溶液和液体导体彼此接触。 在替代实施例中，可以使用已经涂覆有导电材料或包含导电物体的可充气管来形成电接触。 可膨胀管还可以沿着工件的周边提供均匀的接触和压力，这可能不一定是完全平坦的，因为管可以根据工件的周边的形状来适应。 此外，本发明可用于从工件的周边溶解/蚀刻金属层。