公开(公告)号：US12119611B2

公开(公告)日：2024-10-15

申请号：US17408998

申请日：2021-08-23

申请人： NUVOTON TECHNOLOGY CORPORATION JAPAN

发明人： Masayuki Ono ,  Katsuya Samonji ,  Tohru Nishikawa ,  Hiroshi Asaka ,  Mitsuru Nishitsuji ,  Kazuya Yamada

IPC分类号： H01S5/0234 ,  H01S5/022 ,  H01S5/22 ,  H01S5/40 ,  H01S5/02 ,  H01S5/323

CPC分类号： H01S5/0234 ,  H01S5/022 ,  H01S5/2207 ,  H01S5/4018 ,  H01S5/4031 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/32341

摘要： A semiconductor laser apparatus includes: a semiconductor laser device for junction down mounting that includes a first light-emitting device region and a second light-emitting device region formed separately on a substrate. The first light-emitting device region and the second light-emitting device region in the semiconductor laser device each have a stack structure in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked in stated order. The first light-emitting device region includes a first electrode film located on the n-type semiconductor layer. The second light-emitting device region includes a second electrode film located on the p-type semiconductor layer. The first electrode film and the second electrode film are electrically connected to each other.