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公开(公告)号：US11967797B2
公开(公告)日：2024-04-23
申请号：US17061936
申请日：2020-10-02
发明人： Daisuke Ikeda , Hideo Kitagawa , Hiroshi Asaka , Masayuki Ono
IPC分类号： H01S5/00 , H01S5/02 , B23K26/0622 , B23K26/082 , B23K26/359 , B23K26/386 , B23K103/00 , H01S5/042 , H01S5/22 , H01S5/323
CPC分类号： H01S5/0201 , H01S5/0202 , B23K26/0622 , B23K26/082 , B23K26/359 , B23K26/386 , B23K2103/56 , H01S5/04256 , H01S5/22 , H01S5/32341
摘要： A puncture forming method is a method of forming punctures in a sample by irradiating a surface of the sample with a light beam. The puncture forming method includes: forming a first puncture by irradiating a first position on the surface of the sample with a first pulse of the light beam; and after the forming of the first puncture, forming a second puncture which at least partially overlaps the first puncture by irradiating, with a second pulse of the light beam, a second position on the surface of the sample positioned away from the first position in a first direction. The second puncture has a tip which is positioned inside the sample and which is bent in a direction opposite to the first direction.
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公开(公告)号：US12119611B2
公开(公告)日：2024-10-15
申请号：US17408998
申请日：2021-08-23
发明人： Masayuki Ono , Katsuya Samonji , Tohru Nishikawa , Hiroshi Asaka , Mitsuru Nishitsuji , Kazuya Yamada
CPC分类号： H01S5/0234 , H01S5/022 , H01S5/2207 , H01S5/4018 , H01S5/4031 , H01S5/0202 , H01S5/0203 , H01S5/32341
摘要： A semiconductor laser apparatus includes: a semiconductor laser device for junction down mounting that includes a first light-emitting device region and a second light-emitting device region formed separately on a substrate. The first light-emitting device region and the second light-emitting device region in the semiconductor laser device each have a stack structure in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked in stated order. The first light-emitting device region includes a first electrode film located on the n-type semiconductor layer. The second light-emitting device region includes a second electrode film located on the p-type semiconductor layer. The first electrode film and the second electrode film are electrically connected to each other.
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