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公开(公告)号：US12212115B2
公开(公告)日：2025-01-28
申请号：US17170630
申请日：2021-02-08
Applicant: NUVOTON TECHNOLOGY CORPORATION JAPAN
Inventor： Katsuya Samonji , Tohru Nishikawa
IPC: H01S5/02 , H01S5/0231 , H01S5/0239 , H01S5/024
Abstract: Semiconductor light-emitting apparatus includes substrate, submount above substrate, and semiconductor laser above submount. Semiconductor laser and submount are bonded to each other with first bonding material. Substrate and submount are bonded to each other with second bonding material. Submount has first region and second region near substrate, first region being a region on which spacer is disposed, and second region being a region without spacer. Submount is bonded to substrate by covering at least a portion of second region with second bonding material.
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公开(公告)号：US12119611B2
公开(公告)日：2024-10-15
申请号：US17408998
申请日：2021-08-23
Applicant: NUVOTON TECHNOLOGY CORPORATION JAPAN
Inventor： Masayuki Ono , Katsuya Samonji , Tohru Nishikawa , Hiroshi Asaka , Mitsuru Nishitsuji , Kazuya Yamada
CPC classification number: H01S5/0234 , H01S5/022 , H01S5/2207 , H01S5/4018 , H01S5/4031 , H01S5/0202 , H01S5/0203 , H01S5/32341
Abstract: A semiconductor laser apparatus includes: a semiconductor laser device for junction down mounting that includes a first light-emitting device region and a second light-emitting device region formed separately on a substrate. The first light-emitting device region and the second light-emitting device region in the semiconductor laser device each have a stack structure in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked in stated order. The first light-emitting device region includes a first electrode film located on the n-type semiconductor layer. The second light-emitting device region includes a second electrode film located on the p-type semiconductor layer. The first electrode film and the second electrode film are electrically connected to each other.
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