Application partitioning for locality in a stacked memory system

    公开(公告)号:US12099453B2

    公开(公告)日:2024-09-24

    申请号:US17709031

    申请日:2022-03-30

    Abstract: Embodiments of the present disclosure relate to application partitioning for locality in a stacked memory system. In an embodiment, one or more memory dies are stacked on the processor die. The processor die includes multiple processing tiles and each memory die includes multiple memory tiles. Vertically aligned memory tiles are directly coupled to and comprise the local memory block for a corresponding processing tile. An application program that operates on dense multi-dimensional arrays (matrices) may partition the dense arrays into sub-arrays associated with program tiles. Each program tile is executed by a processing tile using the processing tile's local memory block to process the associated sub-array. Data associated with each sub-array is stored in a local memory block and the processing tile corresponding to the local memory block executes the program tile to process the sub-array data.

    HIERARCHICAL NETWORK FOR STACKED MEMORY SYSTEM

    公开(公告)号:US20230297269A1

    公开(公告)日:2023-09-21

    申请号:US17683292

    申请日:2022-02-28

    CPC classification number: G06F3/0655 G06F3/0604 G06F3/0679

    Abstract: A hierarchical network enables access for a stacked memory system including or more memory dies that each include multiple memory tiles. The processor die includes multiple processing tiles that are stacked with the one or more memory die. The memory tiles that are vertically aligned with a processing tile are directly coupled to the processing tile and comprise the local memory block for the processing tile. The hierarchical network provides access paths for each processing tile to access the processing tile’s local memory block, the local memory block coupled to a different processing tile within the same processing die, memory tiles in a different die stack, and memory tiles in a different device. The ratio of memory bandwidth (byte) to floating-point operation (B:F) may improve 50x for accessing the local memory block compared with conventional memory. Additionally, the energy consumed to transfer each bit may be reduced by 10x.

    MEMORY STACKED ON PROCESSOR FOR HIGH BANDWIDTH

    公开(公告)号:US20230275068A1

    公开(公告)日:2023-08-31

    申请号:US17683290

    申请日:2022-02-28

    CPC classification number: H01L25/0657 H01L2225/06565 H01L27/11517

    Abstract: Embodiments of the present disclosure relate to memory stacked on processor for high bandwidth. Systems and methods are disclosed for providing a one-level memory for a processing system by stacking bulk memory on a processor die. In an embodiment, one or more memory dies are stacked on the processor die. The processor die includes multiple processing tiles, where each tile includes a processing unit, mapper, and tile network. Each memory die includes multiple memory tiles. The processing tile is coupled to each memory tile that is above or below the processing tile. The vertically aligned memory tiles comprise the local memory block for the processing tile. The ratio of memory bandwidth (byte) to floating-point operation (B:F) may improve 50× for accessing the local memory block compared with conventional memory. Additionally, the energy consumed to transfer each bit may be reduced by 10×.

    Balanced charge-recycling repeater link

    公开(公告)号:US10164638B2

    公开(公告)日:2018-12-25

    申请号:US15908242

    申请日:2018-02-28

    Abstract: A balanced, charge-recycling repeater link is disclosed. The link includes a first set of segments operating in a first voltage domain and a second set of segments operating in a second voltage domain. The link is configured to transmit a first signal over at least one segment in the first set of segments and at least one other segment in the second set of segments. Each segment of the link includes at least one active circuit element configured to charge or discharge one or more corresponding interconnects within the link and a level shifter configured to shift the level of a signal on a last interconnect of the segment from the first voltage domain to the second voltage domain or the second voltage domain to the first voltage domain.

    Balanced charge-recycling repeater link

    公开(公告)号:US09954527B2

    公开(公告)日:2018-04-24

    申请号:US14869759

    申请日:2015-09-29

    CPC classification number: H03K19/018528

    Abstract: A balanced, charge-recycling repeater link is disclosed. The link includes a first set of segments operating in a first voltage domain and a second set of segments operating in a second voltage domain. The link is configured to transmit a first signal over at least one segment in the first set of segments and at least one other segment in the second set of segments. Each segment of the link includes at least one active circuit element configured to charge or discharge one or more corresponding interconnects within the link and a level shifter configured to shift the level of a signal on a last interconnect of the segment from the first voltage domain to the second voltage domain or the second voltage domain to the first voltage domain.

    Hierarchical network for stacked memory system

    公开(公告)号:US12223201B2

    公开(公告)日:2025-02-11

    申请号:US18438139

    申请日:2024-02-09

    Abstract: A hierarchical network enables access for a stacked memory system including or more memory dies that each include multiple memory tiles. The processor die includes multiple processing tiles that are stacked with the one or more memory die. The memory tiles that are vertically aligned with a processing tile are directly coupled to the processing tile and comprise the local memory block for the processing tile. The hierarchical network provides access paths for each processing tile to access the processing tile's local memory block, the local memory block coupled to a different processing tile within the same processing die, memory tiles in a different die stack, and memory tiles in a different device. The ratio of memory bandwidth (byte) to floating-point operation (B:F) may improve 50× for accessing the local memory block compared with conventional memory. Additionally, the energy consumed to transfer each bit may be reduced by 10×.

    HIERARCHICAL NETWORK FOR STACKED MEMORY SYSTEM

    公开(公告)号:US20240211166A1

    公开(公告)日:2024-06-27

    申请号:US18438139

    申请日:2024-02-09

    CPC classification number: G06F3/0655 G06F3/0604 G06F3/0679

    Abstract: A hierarchical network enables access for a stacked memory system including or more memory dies that each include multiple memory tiles. The processor die includes multiple processing tiles that are stacked with the one or more memory die. The memory tiles that are vertically aligned with a processing tile are directly coupled to the processing tile and comprise the local memory block for the processing tile. The hierarchical network provides access paths for each processing tile to access the processing tile's local memory block, the local memory block coupled to a different processing tile within the same processing die, memory tiles in a different die stack, and memory tiles in a different device. The ratio of memory bandwidth (byte) to floating-point operation (B:F) may improve 50× for accessing the local memory block compared with conventional memory. Additionally, the energy consumed to transfer each bit may be reduced by 10×.

    BALANCED CHARGE-RECYCLING REPEATER LINK
    10.
    发明申请

    公开(公告)号:US20180191349A1

    公开(公告)日:2018-07-05

    申请号:US15908242

    申请日:2018-02-28

    CPC classification number: H03K19/018528

    Abstract: A balanced, charge-recycling repeater link is disclosed. The link includes a first set of segments operating in a first voltage domain and a second set of segments operating in a second voltage domain. The link is configured to transmit a first signal over at least one segment in the first set of segments and at least one other segment in the second set of segments. Each segment of the link includes at least one active circuit element configured to charge or discharge one or more corresponding interconnects within the link and a level shifter configured to shift the level of a signal on a last interconnect of the segment from the first voltage domain to the second voltage domain or the second voltage domain to the first voltage domain.

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