Method and apparatus comprising a semiconductor device and test apparatus

    公开(公告)号:US11415626B2

    公开(公告)日:2022-08-16

    申请号:US17118828

    申请日:2020-12-11

    Applicant: NXP B.V.

    Abstract: A method of testing a semiconductor device. An apparatus comprising a semiconductor device and a test apparatus. The semiconductor device includes an integrated circuit and a plurality of external radiating elements at a surface of the device, the radiating elements include transmit elements and receive elements. The test apparatus includes a surface for placing against the surface of the device. The test apparatus also includes at least one waveguide, which extends through the test apparatus for routing electromagnetic radiation transmitted by one of the transmit elements of the device to one of the receive elements of the device. Each waveguide comprises a plurality of waveguide openings for coupling electromagnetically to corresponding radiating elements of the plurality of radiating elements located at the surface of the device. A spacing between the waveguide openings of each waveguide is larger than, or smaller than a spacing between the corresponding radiating elements.

    Planar balun with non-uniform microstrip line width to improve S-parameter alignment

    公开(公告)号:US12003010B2

    公开(公告)日:2024-06-04

    申请号:US17558934

    申请日:2021-12-22

    Applicant: NXP B.V.

    CPC classification number: H01P1/20372 H01P1/20381 H01Q13/206 H01P5/10

    Abstract: A compact planar balun formed on a substrate including a hairpin-shaped conductive microstrip and a single-ended contact. The hairpin-shaped conductive microstrip includes first and second linear segments integrally formed with a U-shaped segment, and a single-ended contact is conductively coupled at a location along the first linear segment. The first and second linear segments each have a first characteristic impedance and are in parallel with each other having a first end forming first and second differential contacts and having a second end. The U-shaped segment has a second characteristic impedance that is less than the first characteristic impedance in order to achieve proper scatter parameter alignment. The U-shaped segment may be generally formed thicker or wider than the linear segments to achieve a reduced characteristic impedance. In the alternative or in addition, co-planer ground metal is formed closer to the U-shaped segment to achieve a reduced characteristic impedance.

    PLANAR BALUN WITH NON-UNIFORM MICROSTRIP LINE WIDTH TO IMPROVE S-PARAMETER ALIGNMENT

    公开(公告)号:US20230198114A1

    公开(公告)日:2023-06-22

    申请号:US17558934

    申请日:2021-12-22

    Applicant: NXP B.V.

    CPC classification number: H01P1/20372 H01P1/20381 H01Q13/206 H01P5/10

    Abstract: A compact planar balun formed on a substrate including a hairpin-shaped conductive microstrip and a single-ended contact. The hairpin-shaped conductive microstrip includes first and second linear segments integrally formed with a U-shaped segment, and a single-ended contact is conductively coupled at a location along the first linear segment. The first and second linear segments each have a first characteristic impedance and are in parallel with each other having a first end forming first and second differential contacts and having a second end. The U-shaped segment has a second characteristic impedance that is less than the first characteristic impedance in order to achieve proper scatter parameter alignment. The U-shaped segment may be generally formed thicker or wider than the linear segments to achieve a reduced characteristic impedance. In the alternative or in addition, co-planer ground metal is formed closer to the U-shaped segment to achieve a reduced characteristic impedance.

    METHOD AND APPARATUS COMPRISING A SEMICONDUCTOR DEVICE AND TEST APPARATUS

    公开(公告)号:US20210239754A1

    公开(公告)日:2021-08-05

    申请号:US17118828

    申请日:2020-12-11

    Applicant: NXP B.V.

    Abstract: A method of testing a semiconductor device. An apparatus comprising a semiconductor device and a test apparatus. The semiconductor device includes an integrated circuit and a plurality of external radiating elements at a surface of the device, the radiating elements include transmit elements and receive elements. The test apparatus includes a surface for placing against the surface of the device. The test apparatus also includes at least one waveguide, which extends through the test apparatus for routing electromagnetic radiation transmitted by one of the transmit elements of the device to one of the receive elements of the device. Each waveguide comprises a plurality of waveguide openings for coupling electromagnetically to corresponding radiating elements of the plurality of radiating elements located at the surface of the device. A spacing between the waveguide openings of each waveguide is larger than, or smaller than a spacing between the corresponding radiating elements.

    PACKAGED INTEGRATED CIRCUIT DEVICE WITH BUILT-IN BALUNS

    公开(公告)号:US20220328432A1

    公开(公告)日:2022-10-13

    申请号:US17226376

    申请日:2021-04-09

    Applicant: NXP B.V.

    Abstract: A packaged integrated circuit (IC) includes an IC die having first and second external contacts and a package substrate. The IC die is attached to the package substrate which includes a balun in a first metal layer. The balun is connected to the first and second external contacts of the IC die and to a first external contact of the package substrate. The first and second external contacts of the IC die communicate a differential signal with the package substrate, and the first external contact of the package substrate communicates a single-ended signal corresponding to the differential signal. Alternatively, the balun is connected to an external contact of the IC die and to first and second external contacts of the package substrate, in which the external contact of the IC die communicates a single-ended signal and the first and second external contacts of the package substrate communicate a differential signal.

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