中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

4 records (took 0.012 seconds)

    Differential Pressure Sensor
    1.
    发明申请
    Differential Pressure Sensor 有权
    差压传感器

    公开(公告)号：US20140338459A1

    公开(公告)日：2014-11-20

    申请号：US14266281

    申请日：2014-04-30

    Applicant: NXP B.V.

    Inventor： Willem Frederik Adrianus Besling ,  Iris Bominaar-Silkens ,  Remco Henricus Wilhelmus Pijnenburg ,  Marten Oldsen

    IPC: G01L9/12

    CPC classification number: G01L9/005 ,  G01L9/0073 ,  G01L9/125 ,  G01L13/025 ,  G01L19/147 ,  G01L19/148

    Abstract: A differential pressure sensor comprises a cavity having a base including a base electrode and a membrane suspended above the base which includes a membrane electrode, wherein the first membrane is sealed with the cavity defined beneath the first membrane. A first pressure input port is coupled to the space above the sealed first membrane. A capacitive read out system is used to measure the capacitance between the base electrode and membrane electrode. An interconnecting channel is between the cavity and a second pressure input port, so that the sensor is responsive to the differential pressure applied to opposite sides of the membrane by the two input ports.

    Abstract translation: 差压传感器包括具有底座的空腔，底座包括基底电极和悬挂在基座上方的膜，该膜片包括膜电极，其中第一隔膜用限定在第一隔膜下方的空腔密封。 第一压力输入端口连接到密封的第一膜上方的空间。 电容读出系统用于测量基极和膜电极之间的电容。 互连通道在腔和第二压力输入端口之间，使得传感器响应于通过两个输入端口施加到膜的相对侧的差压。

    MEMS RESONATOR PRESSURE SENSOR
    2.
    发明申请
    MEMS RESONATOR PRESSURE SENSOR 有权
    MEMS谐振器压力传感器

    公开(公告)号：US20140208857A1

    公开(公告)日：2014-07-31

    申请号：US14034346

    申请日：2013-09-23

    Applicant: NXP B.V.

    Inventor： Kim Phan Le ,  Willem Frederik Adrianus Besling

    IPC: G01L11/04 ,  B81C1/00

    CPC classification number: G01L11/04 ,  B81C1/00158 ,  G01L9/0019 ,  G01L19/0092

    Abstract: A resonant MEMS pressure sensor in which the resonator mass of the MEMS resonator is anchored both to the fixed base beneath the resonator cavity as well as to the top membrane over the resonator cavity. This provides a more robust fixing of the resonator mass and offers a dependence of resonant frequency on the pressure outside the cavity.

    Abstract translation: 一种共振MEMS压力传感器，其中MEMS谐振器的谐振器质量块被固定在谐振器腔下方的固定基底以及谐振腔上的顶部膜上。 这提供了更稳固的谐振器质量固定并且提供谐振频率对空腔外的压力的依赖性。

    INTEGRATED CIRCUIT WITH PRESSURE SENSOR AND MANUFACTURING METHOD
    3.
    发明申请
    INTEGRATED CIRCUIT WITH PRESSURE SENSOR AND MANUFACTURING METHOD 有权
    集成电路与压力传感器和制造方法

    公开(公告)号：US20130328142A1

    公开(公告)日：2013-12-12

    申请号：US13915523

    申请日：2013-06-11

    Applicant: NXP B.V.

    Inventor： Axel Nackaerts ,  Willem Frederik Adrianus Besling ,  Klaus Reimann

    IPC: H01L29/84 ,  H01L21/28

    CPC classification number: G01L9/0073 ,  B81B7/008 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2207/015 ,  B81C1/00246 ,  B81C2203/0735 ,  B81C2203/0771 ,  G01L9/0042 ,  H01L21/28 ,  H01L29/84

    Abstract: Disclosed is an integrated circuit (100), comprising a semiconductor substrate (110) carrying a plurality of circuit elements; and a pressure sensor including a cavity (140) on said semiconductor substrate, said cavity comprising a pair of electrodes (120, 122) laterally separated from each other; and a flexible membrane (130) over and spatially separated from said electrodes such that said membrane interferes with a fringe field between said electrodes, said membrane comprising at least one aperture (132). A method of manufacturing such an IC is also disclosed.

    Abstract translation: 公开了一种集成电路（100），包括承载多个电路元件的半导体衬底（110）; 和包括在所述半导体衬底上的空腔（140）的压力传感器，所述空腔包括彼此横向分离的一对电极（120,122）; 以及在所述电极之间和空间上分离的柔性膜（130），使得所述膜干扰所述电极之间的边缘场，所述膜包括至少一个孔（132）。 还公开了制造这种IC的方法。

Patent Agency Ranking