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公开(公告)号：US20210036663A1
公开(公告)日：2021-02-04
申请号：US16528536
申请日：2019-07-31
Applicant: NXP USA, Inc.
Inventor： Joseph Staudinger , Yu You , Donald Vernon Hayes
Abstract: Embodiments of a temperature compensation circuit and a temperature compensated amplifier circuit are disclosed. In an embodiment, a temperature compensation circuit includes a bias reference circuit having serially connected transistor devices and a driver transistor device connected to the bias reference circuit. At least one of the serially connected transistor devices includes a resistor connected between two terminals of the at least one of the serially connected transistor devices. The driver transistor device is configured to generate a drive current based on a resistance value of the resistor.
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公开(公告)号：US10148228B2
公开(公告)日：2018-12-04
申请号：US15384601
申请日：2016-12-20
Applicant: NXP USA, Inc.
Inventor： Donald Vernon Hayes , Joseph Staudinger , Abdulrhman M. S. Ahmed
Abstract: A Doherty amplifier is able to enhance efficiency in low-power and high-power RF communication states by enabling carrier and peaking amplifiers as required, and controlling bias modulation, depending on traffic loading levels in each of a set of consecutive communications timeslots. For example, if, in a low-power state, traffic loading levels do not exceed a relatively lower threshold in a communications timeslot, carrier amplifiers are selectively enabled as needed, peaking amplifiers are not enabled, and carrier amplifier bias levels are kept substantially constant. If, in an intermediate-power state, the lower threshold is exceeded but a relatively higher threshold is not exceeded, all carrier amplifiers are enabled, peaking amplifiers are selectively enabled, and bias levels are kept substantially constant. If, in a high-power state, the higher threshold is exceeded, all carrier and peaking amplifiers can be enabled, and the peaking amplifier bias tracks the RF envelope of the received RF signal.
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公开(公告)号：US11196391B2
公开(公告)日：2021-12-07
申请号：US16528536
申请日：2019-07-31
Applicant: NXP USA, Inc.
Inventor： Joseph Staudinger , Yu You , Donald Vernon Hayes
Abstract: Embodiments of a temperature compensation circuit and a temperature compensated amplifier circuit are disclosed. In an embodiment, a temperature compensation circuit includes a bias reference circuit having serially connected transistor devices and a driver transistor device connected to the bias reference circuit. At least one of the serially connected transistor devices includes a resistor connected between two terminals of the at least one of the serially connected transistor devices. The driver transistor device is configured to generate a drive current based on a resistance value of the resistor.
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公开(公告)号：US20180175800A1
公开(公告)日：2018-06-21
申请号：US15384601
申请日：2016-12-20
Applicant: NXP USA, Inc.
Inventor： Donald Vernon Hayes , Joseph Staudinger , Abdulrhman M. S. Ahmed
CPC classification number: H03F1/0288 , H03F1/0266 , H03F3/195 , H03F3/245 , H03F2200/102 , H03F2200/105 , H03F2200/336 , H03F2200/451 , H03F2200/555 , H03F2203/21103 , H03F2203/21106 , H03F2203/21139
Abstract: A Doherty amplifier is able to enhance efficiency in low-power and high-power RF communication states by enabling carrier and peaking amplifiers as required, and controlling bias modulation, depending on traffic loading levels in each of a set of consecutive communications timeslots. For example, if, in a low-power state, traffic loading levels do not exceed a relatively lower threshold in a communications timeslot, carrier amplifiers are selectively enabled as needed, peaking amplifiers are not enabled, and carrier amplifier bias levels are kept substantially constant. If, in an intermediate-power state, the lower threshold is exceeded but a relatively higher threshold is not exceeded, all carrier amplifiers are enabled, peaking amplifiers are selectively enabled, and bias levels are kept substantially constant. If, in a high-power state, the higher threshold is exceeded, all carrier and peaking amplifiers can be enabled, and the peaking amplifier bias tracks the RF envelope of the received RF signal.
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