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    Methods of analyzing water soluble contaminants generated during microelectronic device manufacturing processes
    1.
    发明授权
    Methods of analyzing water soluble contaminants generated during microelectronic device manufacturing processes 有权
    分析微电子器件制造过程中产生的水溶性污染物的方法

    公开(公告)号：US06176120B1

    公开(公告)日：2001-01-23

    申请号：US09330972

    申请日：1999-06-11

    申请人： Nam-hee You ,  Dong-soo Lee ,  Sun-young Lee ,  Jung-sung Hwang

    发明人： Nam-hee You ,  Dong-soo Lee ,  Sun-young Lee ,  Jung-sung Hwang

    IPC分类号： G01N1100

    CPC分类号： G01N1/2202 ,  G01N1/24 ,  G01N2001/2223 ,  G01N2001/2282 ,  G01N2001/4066

    摘要： Methods of analyzing water-soluble contaminants comprise providing reference air streams having gaseous water present therein; condensing the reference air streams such that the gaseous water liquefies; pressurizing the liquefied water; and supplying the liquefied water to analyzers. Systems for analyzing water-soluble contaminants comprise air inlets that absorb reference air containing gaseous water therein; valves that control the flow of the reference air in fluid communication with the air inlets; condensers that condense the gaseous water in the reference air in fluid communication with the valves; pressurization pumps that pressurize the water condensed from the reference air in fluid communication with the condensers; and discharge pumps that discharge an excessive amount of water contained in the reference air.

    摘要翻译： 分析水溶性污染物的方法包括提供其中存在气态水的参考空气流; 冷凝参考气流，使气态水液化; 对液化水加压; 并将液化水供应给分析仪。 用于分析水溶性污染物的系统包括吸收其中含有气态水的参考空气的空气入口; 控制与空气入口流体连通的参考空气的流动的阀; 冷凝器，其将与参考空气中的气态水冷凝成与阀流体连通; 加压泵，其将与从冷凝器流体连通的参考空气冷凝的水加压; 以及排出包含在参考空气中的过量水的排出泵。

    Resistive random access memory device and memory array including the same
    5.
    发明授权
    Resistive random access memory device and memory array including the same 有权
    电阻随机存取存储器件和包含相同的存储器阵列

    公开(公告)号：US08492741B2

    公开(公告)日：2013-07-23

    申请号：US12805430

    申请日：2010-07-30

    申请人： Chang-bum Lee ,  Dong-soo Lee ,  Chang-jung Kim

    发明人： Chang-bum Lee ,  Dong-soo Lee ,  Chang-jung Kim

    IPC分类号： H01L29/02

    CPC分类号： H01L45/04 ,  G11C13/0007 ,  G11C2213/71 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/146

    摘要： A resistive random access memory (RRAM) includes a resistive memory layer of a transition metal oxide, such as Ni oxide, and is doped with a metal material. The RRAM may include at least one first electrode, a resistive memory layer on the at least one first electrode, the resistive memory layer including a Ni oxide layer doped with at least one element selected from a group consisting of Fe, Co, and Sn, and at least one second electrode on the resistive memory layer. The RRAM device may include a plurality of first electrodes and a plurality of second electrodes, and the resistive memory layer may be between the plurality of first electrodes and the plurality of second electrodes.

    摘要翻译： 电阻随机存取存储器（RRAM）包括诸如Ni氧化物的过渡金属氧化物的电阻性存储层，并且掺杂有金属材料。 RRAM可以包括至少一个第一电极，至少一个第一电极上的电阻性存储器层，电阻性存储层包括掺杂有选自Fe，Co和Sn中的至少一种元素的Ni氧化物层， 以及电阻存储器层上的至少一个第二电极。 RRAM器件可以包括多个第一电极和多个第二电极，并且电阻性存储器层可以在多个第一电极和多个第二电极之间。

    Resistive random access memory devices and resistive random access memory arrays having the same
    6.
    发明申请
    Resistive random access memory devices and resistive random access memory arrays having the same 有权
    电阻随机存取存储器件和具有相同功能的电阻随机存取存储器阵列

    公开(公告)号：US20110147696A1

    公开(公告)日：2011-06-23

    申请号：US12805783

    申请日：2010-08-19

    申请人： Dong-soo Lee ,  Chang-bum Lee ,  Chang-jung Kim

    发明人： Dong-soo Lee ,  Chang-bum Lee ,  Chang-jung Kim

    IPC分类号： H01L45/00

    CPC分类号： G11C11/5685 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2213/56 ,  G11C2213/71 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146

    摘要： A resistive random access memory (RRAM) devices and resistive random access memory (RRAM) arrays are provided, the RRAM devices include a first electrode layer, a variable resistance material layer formed of an oxide of a metallic material having a plurality of oxidation states, an intermediate electrode layer on the variable resistance material layer and formed of a conductive material having a lower reactivity with oxygen than the metallic material, and a second electrode layer on the intermediate electrode layer. The RRAM arrays include at least one of the aforementioned RRAM devices.

    摘要翻译： 提供了电阻随机存取存储器（RRAM）器件和电阻随机存取存储器（RRAM）阵列，RRAM器件包括第一电极层，由具有多个氧化态的金属材料的氧化物形成的可变电阻材料层， 所述可变电阻材料层上的中间电极层由与所述金属材料相比氧的反应性低的导电材料和所述中间电极层上的第二电极层形成。 RRAM阵列包括至少一个上述RRAM设备。

    Resistive random access memory
    8.
    发明申请
    Resistive random access memory 审中-公开
    电阻随机存取存储器

    公开(公告)号：US20100133496A1

    公开(公告)日：2010-06-03

    申请号：US12588274

    申请日：2009-10-09

    申请人： Chang-bum Lee ,  Chang-jung Kim ,  Dong-soo Lee

    发明人： Chang-bum Lee ,  Chang-jung Kim ,  Dong-soo Lee

    IPC分类号： H01L47/00

    CPC分类号： H01L45/146 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233

    摘要： A RRAM may include a first electrode, a second electrode, and a memory resistant layer between the first and second electrodes, wherein the memory resistant layer may include a transition metal oxide doped with a metal having a high oxygen affinity. Because a RRAM includes a memory resistant layer doped with a material having a high oxygen affinity, the RRAM may be stably driven at higher temperatures.

    摘要翻译： RRAM可以包括在第一和第二电极之间的第一电极，第二电极和存储器电阻层，其中耐记忆层可以包括掺杂有高氧亲和力的金属的过渡金属氧化物。 因为RRAM包括掺有具有高氧亲和性的材料的记忆阻抗层，所以可以在更高的温度下稳定地驱动RRAM。

    Optical network terminal of the gigabit passive optical network and frame treatment method of the ONT
    10.
    发明授权
    Optical network terminal of the gigabit passive optical network and frame treatment method of the ONT 有权
    千兆无源光网络的光网络终端和ONT的帧处理方法

    公开(公告)号：US08526818B2

    公开(公告)日：2013-09-03

    申请号：US12747330

    申请日：2009-04-28

    申请人： Kwang-ok Kim ,  Yong-tae Kim ,  Dong-soo Lee

    发明人： Kwang-ok Kim ,  Yong-tae Kim ,  Dong-soo Lee

    IPC分类号： H04B14/00

    CPC分类号： H04J3/1694 ,  H04Q11/0067 ,  H04Q2011/0064

    摘要： A gigabit passive optical network (GPON) system for fiber to the home (FTTH) service must provide a down-stream data rate of an optical band to provide IPTV service with hundreds of channels to subscribers, and must be able to provide an upstream data rate of an optical band using a currently available BM-IC chip. A currently available BM-IC chip for a GPON has 1.244 Gbps and 2.488 Gbps modes. Accordingly, an optical network terminal (ONT) for a GPON that is capable of providing a downstream transmission band of 10-Gbps and an upstream transmission band of 1.244 Gbps or 2.488 Gbps, and a method for processing an upstream frame in the terminal, are provided. The GPON ONT can provide 20 Mbps, high-definition IPTV service with 500 channels and can provide both upstream data rates of 1.244 Gbps and 2.488 Gbps according to a user's selection without using an additional device.

    摘要翻译： 用于光纤到家庭（FTTH）业务的千兆无源光网络（GPON）系统必须提供光带的下行数据速率，以向用户提供数百个信道的IPTV服务，并且必须能够提供上行数据 使用当前可用的BM-IC芯片的光学带宽率。 目前用于GPON的BM-IC芯片具有1.244 Gbps和2.488 Gbps模式。 因此，能够提供10Gbps的下行传输频带和1.244Gbps或2.488Gbps的上行传输频带的GPON的光网络终端（ONT）以及用于处理终端中的上行帧的方法是 提供。 GPON ONT可以提供具有500个通道的20 Mbps高清晰度IPTV服务，并可根据用户的选择提供1.244 Gbps和2.488 Gbps的上行数据速率，而无需使用其他设备。