公开(公告)号：US20180182759A1

公开(公告)日：2018-06-28

申请号：US15883977

申请日：2018-01-30

申请人： Nantero, Inc.

发明人： Claude L. BERTIN ,  Thomas RUECKES ,  X.M. Henry HUANG ,  Ramesh SIVARAJAN ,  Eliodor G. Ghenciu ,  Steven L. KONSEK ,  Mitchell MEINHOLD

IPC分类号： H01L27/102 ,  G11C13/02 ,  B82Y10/00 ,  H01L21/822 ,  H01L27/06 ,  H01L27/12

CPC分类号： H01L27/1021 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/19 ,  G11C2213/71 ,  G11C2213/72 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/1203

摘要： Under one aspect, a non-volatile nanotube diode device includes first and second terminals; a semiconductor element including a cathode and an anode, and capable of forming a conductive pathway between the cathode and anode in response to electrical stimulus applied to the first conductive terminal; and a nanotube switching element including a nanotube fabric article in electrical communication with the semiconductive element, the nanotube fabric article disposed between and capable of forming a conductive pathway between the semiconductor element and the second terminal, wherein electrical stimuli on the first and second terminals causes a plurality of logic states.

公开(公告)号：US20180197918A1

公开(公告)日：2018-07-12

申请号：US15911246

申请日：2018-03-05

申请人： Nantero, Inc.

发明人： Claude L. BERTIN ,  Thomas RUECKES ,  X.M. Henry HUANG ,  C. Rinn CLEAVELIN

IPC分类号： H01L27/28 ,  G11C13/00 ,  H01L51/00 ,  H01L45/00 ,  H01L27/24 ,  H01L51/05

CPC分类号： H01L27/285 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2213/35 ,  G11C2213/73 ,  H01L27/2409 ,  H01L27/2463 ,  H01L29/02 ,  H01L45/1233 ,  H01L45/149 ,  H01L45/1608 ,  H01L45/165 ,  H01L45/1675 ,  H01L51/0046 ,  H01L51/0048 ,  H01L51/0579

摘要： The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.

公开(公告)号：US20200161304A1

公开(公告)日：2020-05-21

申请号：US16752861

申请日：2020-01-27

申请人： Nantero, Inc.

发明人： Claude L. BERTIN ,  Thomas RUECKES ,  X.M. Henry HUANG ,  Ramesh SIVARAJAN ,  Eliodor G. Ghenciu ,  Steven L. KONSEK ,  Mitchell MEINHOLD

IPC分类号： H01L27/102 ,  G11C13/02 ,  B82Y10/00

摘要： Under one aspect, a non-volatile nanotube diode device includes first and second terminals; a semiconductor element including a cathode and an anode, and capable of forming a conductive pathway between the cathode and anode in response to electrical stimulus applied to the first conductive terminal; and a nanotube switching element including a nanotube fabric article in electrical communication with the semiconductive element, the nanotube fabric article disposed between and capable of forming a conductive pathway between the semiconductor element and the second terminal, wherein electrical stimuli on the first and second terminals causes a plurality of logic states.

公开(公告)号：US20160315122A1

公开(公告)日：2016-10-27

申请号：US15197185

申请日：2016-06-29

申请人： Nantero Inc.

发明人： Claude L. BERTIN ,  C. Rinn CLEAVELIN ,  Thomas RUECKES ,  X.M. Henry HUANG ,  H. Montgomery MANNING

IPC分类号： H01L27/28 ,  H01L27/24 ,  H01L51/00 ,  H01L29/16 ,  H01L29/872 ,  H01L45/00 ,  G11C13/00 ,  H01L29/06

CPC分类号： B62J7/06 ,  B82Y10/00 ,  G11C13/0002 ,  G11C13/003 ,  G11C13/0069 ,  G11C13/0097 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/35 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L27/249 ,  H01L27/285 ,  H01L29/0669 ,  H01L29/1606 ,  H01L29/861 ,  H01L29/872 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/149 ,  H01L45/1608 ,  H01L45/165 ,  H01L45/1675 ,  H01L51/0048 ,  H01L51/0579

摘要： The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.

摘要翻译： 本公开涉及基于碳的二极管，基于碳的电阻变化存储元件，具有电阻变化存储元件和基于碳的二极管的电阻变化存储器，制造碳基二极管的方法，制造具有碳基二极管的电阻变化存储元件的方法，以及 制造具有基于碳的二极管的电阻变化存储元件的电阻变化存储器的方法。 碳基二极管可以是可以使用碳同素异形体形成的任何合适类型的二极管，例如半导体单壁碳纳米管（s-SWCNT），半导体Buckminsterfulleren（例如C60 Buckyballs）或半导体石墨层（层状石墨烯）。 碳基二极管可以是pn结二极管，肖特基二极管，其他任何其他类型的使用碳同素异形体形成的二极管。 碳基二极管可以放置在三维（3D）电子器件中的任何集成度，例如与部件或布线层集成。

公开(公告)号：US20190378879A1

公开(公告)日：2019-12-12

申请号：US16544025

申请日：2019-08-19

申请人： Nantero, Inc.

发明人： Claude L. BERTIN ,  Thomas RUECKES ,  X.M. Henry HUANG ,  C. Rinn CLEAVELIN

IPC分类号： H01L27/28 ,  G11C13/00 ,  H01L27/24 ,  H01L29/02 ,  H01L45/00 ,  H01L51/00 ,  H01L51/05

摘要： The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.

公开(公告)号：US20190221613A1

公开(公告)日：2019-07-18

申请号：US16362615

申请日：2019-03-23

申请人： Nantero, Inc.

发明人： Claude L. BERTIN ,  Thomas RUECKES ,  X.M. Henry HUANG ,  C. Rinn CLEAVELIN

IPC分类号： H01L27/28 ,  H01L45/00 ,  H01L29/02 ,  H01L27/24 ,  H01L51/05 ,  H01L51/00 ,  G11C13/00

CPC分类号： H01L27/285 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2213/35 ,  G11C2213/73 ,  H01L27/2409 ,  H01L27/2463 ,  H01L29/02 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/149 ,  H01L45/1608 ,  H01L45/165 ,  H01L45/1675 ,  H01L51/0046 ,  H01L51/0048 ,  H01L51/0579

摘要： The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.

公开(公告)号：US20190051651A1

公开(公告)日：2019-02-14

申请号：US16154030

申请日：2018-10-08

申请人： Nantero, Inc.

发明人： Claude L. BERTIN ,  Thomas RUECKES ,  X.M. Henry HUANG ,  Ramesh SIVARAJAN ,  Eliodor G. Ghenciu ,  Steven L. KONSEK ,  Mitchell MEINHOLD

IPC分类号： H01L27/102 ,  G11C13/02 ,  B82Y10/00 ,  H01L21/822 ,  H01L27/06 ,  H01L27/12

CPC分类号： H01L27/1021 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/19 ,  G11C2213/71 ,  G11C2213/72 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/1203

摘要： Under one aspect, a non-volatile nanotube diode device includes first and second terminals; a semiconductor element including a cathode and an anode, and capable of forming a conductive pathway between the cathode and anode in response to electrical stimulus applied to the first conductive terminal; and a nanotube switching element including a nanotube fabric article in electrical communication with the semiconductive element, the nanotube fabric article disposed between and capable of forming a conductive pathway between the semiconductor element and the second terminal, wherein electrical stimuli on the first and second terminals causes a plurality of logic states.