公开(公告)号：US5868560A

公开(公告)日：1999-02-09

申请号：US940946

申请日：1997-09-30

申请人： Naohisa Tamada ,  Toshihide Kawachi ,  Yuki Miyamoto

发明人： Naohisa Tamada ,  Toshihide Kawachi ,  Yuki Miyamoto

IPC分类号： G03F1/42 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027

CPC分类号： G03F7/70591 ,  G03F7/70633

摘要： A reticle that allows deviation in rotation and magnification of an exposure region detected just using a wafer subjected to exposure and development without having to provide an underlying pattern, a pattern transferred using such a reticle, and a correction method are achieved. A first measurement pattern is provided on a dicing line pattern of the X axis direction. Also, a second measurement pattern is formed on a line of extension of the first measurement pattern in the Y axis direction. Similarly, a third measurement pattern is formed on the dicing line pattern in the Y axis direction. A fourth measurement pattern is provided corresponding to the third measurement pattern.

摘要翻译： 实现了掩模版，其允许仅使用经受曝光和显影的晶片检测到的曝光区域的旋转偏移和放大率，而不必提供下面的图案，使用这种掩模版转印的图案和校正方法。 在X轴方向的切割线图案上设置第一测量图案。 此外，在Y轴方向上的第一测量图案的延伸线上形成第二测量图案。 类似地，在切割线图案上沿Y轴方向形成第三测量图案。 对应于第三测量图案提供第四测量图案。

公开(公告)号：US06890692B2

公开(公告)日：2005-05-10

申请号：US10860244

申请日：2004-06-04

申请人： Shuji Nakao ,  Yuki Miyamoto ,  Naohisa Tamada ,  Shinroku Maejima

发明人： Shuji Nakao ,  Yuki Miyamoto ,  Naohisa Tamada ,  Shinroku Maejima

IPC分类号： G03F1/00 ,  G03F1/38 ,  G03F1/44 ,  G03F1/68 ,  G03F7/20 ,  G03F7/207 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F7/70641 ,  G03F1/44 ,  G03F1/50 ,  G06K7/0095

摘要： A photomask for focus monitoring of the present invention is provided with a substrate that allows the exposure light to pass through and a unit mask structure for focus monitoring. Unit mask structure for focus monitoring has two patterns, and that are formed on the surface of substrate and a light blocking film that has a rear surface pattern that is formed on the rear surface of substrate for substantially differentiating the incident directions of the exposure light that enters two patterns, and for position measurement. When the dimension of rear surface pattern is L and the wavelength of the exposure light is λ, L/λ is 10, or greater.

摘要翻译： 本发明的用于聚焦监视的光掩模具有允许曝光光通过的基板和用于聚焦监视的单元掩模结构。 用于焦点监测的单元掩模结构具有两种图案，并且形成在基板的表面上，并且具有形成在基板的后表面上的背面图案的遮光膜，用于基本上区分曝光光的入射方向， 进入两种模式，并进行位置测量。 当背面图案的尺寸为L且曝光光的波长为λ时，L /λ为10以上。

公开(公告)号：US06797443B2

公开(公告)日：2004-09-28

申请号：US09986084

申请日：2001-11-07

申请人： Shuji Nakao ,  Yuki Miyamoto ,  Naohisa Tamada

发明人： Shuji Nakao ,  Yuki Miyamoto ,  Naohisa Tamada

IPC分类号： G03F900

CPC分类号： G03F7/70066 ,  G02B7/04 ,  G02B27/40 ,  G03F7/70641

摘要： Non-telecentric illuminating light obtained by controlling the shape of an opening of an illumination aperture is directed onto a photomask, and a characteristic such that an image of a pattern of the photomask formed by the non-telecentric illumination moves in the direction perpendicular to an optical axis when an image-forming plane is moved in the direction of the optical axis, to perform focus monitoring. This eliminates the need for a special photomask, so that inexpensive and highly precise focus monitoring method, focus monitoring apparatus, and a method of manufacturing a semiconductor device can be obtained.

摘要翻译： 通过控制照明孔的开口的形状而获得的非远心照明光被引导到光掩模上，并且具有使得由非远心照明形成的光掩模的图案的图像沿垂直于 当成像平面在光轴方向上移动时进行光轴执行聚焦监视。 这就消除了对特殊光掩模的需要，从而可以获得廉价且高精度的聚焦监视方法，聚焦监视装置和半导体装置的制造方法。

公开(公告)号：US06764794B2

公开(公告)日：2004-07-20

申请号：US10115246

申请日：2002-04-04

申请人： Shuji Nakao ,  Yuki Miyamoto ,  Naohisa Tamada ,  Shinroku Maejima

发明人： Shuji Nakao ,  Yuki Miyamoto ,  Naohisa Tamada ,  Shinroku Maejima

IPC分类号： G03F900

CPC分类号： G03F7/70641 ,  G03F1/44 ,  G03F1/50 ,  G06K7/0095

摘要： A photomask for focus monitoring of the present invention is provided with a substrate that allows the exposure light to pass through and a unit mask structure for focus monitoring. Unit mask structure for focus monitoring has two patterns, and that are formed on the surface of substrate and a light blocking film that has a rear surface pattern that is formed on the rear surface of substrate for substantially differentiating the incident directions of the exposure light that enters two patterns, and for position measurement. When the dimension of rear surface pattern is L and the wavelength of the exposure light is &lgr;, L/&lgr; is 10, or greater.

摘要翻译： 本发明的用于聚焦监视的光掩模具有允许曝光光通过的基板和用于聚焦监视的单元掩模结构。 用于焦点监测的单元掩模结构具有两种图案，并且形成在基板的表面上，并且具有形成在基板的后表面上的背面图案的遮光膜，用于基本上区分曝光光的入射方向， 进入两种模式，并进行位置测量。 当背面图案的尺寸为L且曝光光的波长为λ时，L /λ为10以上。

公开(公告)号：US06869735B2

公开(公告)日：2005-03-22

申请号：US10338004

申请日：2003-01-08

申请人： Naohisa Tamada

发明人： Naohisa Tamada

IPC分类号： G03F1/36 ,  G03F1/68 ,  G03F1/70 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F1/36

摘要： In the layout of a photomask for pattern transfer, main patterns for transferring an image to a photosensitive film are positioned; auxiliary patterns, which do not substantially transfer an image to a photosensitive film are temporarily positioned; an auxiliary pattern is selected so an end partially overlaps an end of the main pattern and makes contact with the main pattern; and adjusting the position of the auxiliary pattern selected so that the end of the auxiliary pattern selected completely overlaps the end of the main pattern. Inspection of the photomask for mask defects is simplified while achieving an increase in resolution of a photomask for pattern transfer.

摘要翻译： 在用于图案转印的光掩模的布局中，定位用于将图像转印到感光膜的主要图案; 不将基本上将图像转印到感光膜的辅助图案暂时定位; 选择辅助图案，使得端部部分地与主图案的端部重叠并与主图案接触; 并且调整所选择的辅助图案的位置，使得所选择的辅助图案的末端完全与主图案的末端重叠。 对于掩模缺陷的光掩模的检查被简化，同时实现用于图案转印的光掩模的分辨率的增加。

公开(公告)号：US06503665B1

公开(公告)日：2003-01-07

申请号：US09428479

申请日：1999-10-28

申请人： Naohisa Tamada

发明人： Naohisa Tamada

IPC分类号： G03F900

CPC分类号： G03F7/70066 ,  G03F1/26

摘要： A shading member is mounted on the upper side of a corner portion of a shading zone area corresponding to an area causing triple exposure with an adhesive. It is possible to provide a phase shift mask capable of readily exposing a semiconductor substrate with no bad influence on adjacent exposed areas.

摘要翻译： 遮光构件安装在对应于用粘合剂进行三次曝光的区域的遮光区域的角部的上侧。 可以提供能够容易地暴露半导体衬底的相移掩模，对相邻的曝光区域没有不利影响。

公开(公告)号：US20050064676A1

公开(公告)日：2005-03-24

申请号：US10944781

申请日：2004-09-21

申请人： Akihiro Tobioka ,  Naohisa Tamada

发明人： Akihiro Tobioka ,  Naohisa Tamada

IPC分类号： G03F9/00 ,  G03F7/20 ,  H01L21/027 ,  H01L21/32 ,  H01L21/4763 ,  H01L23/544

CPC分类号： H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a first step, first trenches are formed to constitute alignment marks. In a second step, second trenches are formed, and the first and second trenches are filled with metal. When detecting alignment marks, the second trenches filled with metal prevent the position of the first trenches from being detected. In a third step, third trenches of the same shape as the first trenches are formed. In a fourth step, fourth trenches are formed, and the third and fourth trenches are filled with metal. When detecting alignment marks, the fourth trenches filled with metal prevent the position of the third trenches formed in a lower layer from being detected. The third and fourth steps are repeated with an increase in the number of stacked layers. Consequently, influences caused by detection of alignment marks formed in a lower layer are reduced while controlling an increase in the area occupied by alignment marks.

摘要翻译： 在第一步骤中，形成第一沟槽以构成对准标记。 在第二步骤中，形成第二沟槽，并且用金属填充第一和第二沟槽。 当检测到对准标记时，填充有金属的第二沟槽防止检测到第一沟槽的位置。 在第三步骤中，形成与第一沟槽相同形状的第三沟槽。 在第四步骤中，形成第四沟槽，并且第三和第四沟槽用金属填充。 当检测到对准标记时，填充有金属的第四沟槽防止形成在下层中的第三沟槽的位置被检测。 随着堆叠层数的增加，重复第三和第四步骤。 因此，在控制对准标记所占据的面积的增加的同时，降低了形成在下层中的对准标记的检测所引起的影响。

公开(公告)号：US06395456B1

公开(公告)日：2002-05-28

申请号：US09342895

申请日：1999-06-29

申请人： Naohisa Tamada ,  Yoshiaki Yamada

发明人： Naohisa Tamada ,  Yoshiaki Yamada

IPC分类号： G03F722

CPC分类号： G03F7/70466

摘要： A semiconductor device achieving higher integration without deterioration of electrical characteristics thereof, a method of manufacturing the semiconductor device, and a method of forming a resist pattern used for that can be obtained. According to the method of forming a resist pattern used for the method of manufacturing a semiconductor device, light is directed via a mask onto a resist film surface formed on a substrate to project a first optical image having a width equal to or less than the wavelength of the light onto the resist surface. The mask is shifted relative to the substrate. Via the shifted mask, light is directed onto the resist film surface to project a second optical image having a width equal to or less than the wavelength of the light onto the resist surface such that the second optical image partially overlaps faith a region where the first optical image is projected.

摘要翻译： 可以获得实现更高集成度而不劣化其电特性的半导体器件，制造半导体器件的方法以及形成用于其的抗蚀剂图案的方法。根据形成用于该方法的抗蚀剂图案的方法 制造半导体器件时，将光通过掩模引导到形成在基板上的抗蚀剂膜表面上，以将具有等于或小于光的波长的宽度的第一光学图像投影到抗蚀剂表面上。 掩模相对于基底移动。 通过移动的掩模，光被引导到抗蚀剂膜表面上，以将具有等于或小于光的波长的宽度的第二光学图像投影到抗蚀剂表面上，使得第二光学图像部分地与第一光学图像的第一 投影光学图像。