利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

7 条记录 (耗时 0.017 秒)

    Process for selectively aggregating coal powder
    1.
    发明授权
    Process for selectively aggregating coal powder 失效
    选择性聚集煤粉的工艺

    公开(公告)号：US4360422A

    公开(公告)日：1982-11-23

    申请号：US292850

    申请日：1981-08-14

    申请人： Naoki Oka ,  Nobuo Tanaka ,  Takashi Ando

    发明人： Naoki Oka ,  Nobuo Tanaka ,  Takashi Ando

    IPC分类号： C10L9/00 ,  B03B1/04 ,  B03B9/00 ,  C10L5/06 ,  B03B1/00

    CPC分类号： B03B9/005 ,  B03B1/04 ,  C10L5/06

    摘要： A process for removing ash from raw coal is described, comprising adding mineral oil to a slurry composed of a coal powder and water, granulating the coal by stirring to form granules, and separating the resulting coal granules by a screen, wherein the improvement comprises granulating the coal using a mineral oil mixture consisting of from 0.1 to 10% by weight of a heavy fraction having a boiling point of at least 330.degree. C. and from 90 to 99.9% by weight of a light fraction having a boiling point of 230.degree. C. or less, heating the coal granules separated by the screen to evaporate and recover almost all of the light fraction, and reusing the recovered light fraction for granulation of additional coal granules.

    摘要翻译： 描述了从原煤中除灰的方法，包括向由煤粉和水组成的浆料中加入矿物油，通过搅拌将煤制粒成颗粒，并通过筛网分离所得的煤颗粒，其中改进包括造粒 使用由0.1至10重量％的沸点为至少330℃的重馏分和90至99.9重量％的沸点为230℃的轻馏分组成的矿物油混合物的煤。 加热由筛网分离的煤颗粒蒸发并回收几乎所有的轻馏分，并重新利用回收的轻馏分造粒另外的煤颗粒。

    Mixed fuel of coal and oil
    2.
    发明授权
    Mixed fuel of coal and oil 失效
    煤和油混合燃料

    公开(公告)号：US4417901A

    公开(公告)日：1983-11-29

    申请号：US372700

    申请日：1982-04-28

    申请人： Takashi Ando ,  Naoki Oka

    发明人： Takashi Ando ,  Naoki Oka

    IPC分类号： C10L1/32

    CPC分类号： C10L1/322

    摘要： A mixed fuel of coal and oil in the form of a dispersion of coal particles in oil. The coal particles comprise coal particles (A) having a median diameter of 10 microns or less together with coal particles (B) having a median diameter of between 15 and 42 microns. The ratio of coal particles (A) to coal particles (B) is from 8:2 to 1:9. The absolute value of the difference between the median diameter and the modal diameter of all the coal particles in the mixed fuel of coal and oil is at least 2 microns. The mixed fuel preferably has a water content of 0.6% by weight or less.

    摘要翻译： 以煤粒子分散在油中的煤和油的混合燃料。 煤颗粒包含中等粒径为10微米或更小的煤颗粒（A）以及中粒径在15和42微米之间的煤颗粒（B）。 煤粒子（A）与煤粒子（B）的比例为8：2〜1：9。 煤和油的混合燃料中所有煤颗粒的中值直径和模态直径之间的差异绝对值至少为2微米。 混合燃料的含水量优选为0.6重量％以下。

    Method of manufacturing semiconductor integrated circuit
    3.
    发明授权
    Method of manufacturing semiconductor integrated circuit 失效
    制造半导体集成电路的方法

    公开(公告)号：US06346475B1

    公开(公告)日：2002-02-12

    申请号：US09689838

    申请日：2000-10-13

    申请人： Yoichi Suzuki ,  Naoki Oka

    发明人： Yoichi Suzuki ,  Naoki Oka

    IPC分类号： H01L214763

    CPC分类号： H01L21/7682 ,  H01L21/31111

    摘要： A silicon nitride film is formed on a substrate so as to cover semiconductor devices. After having formed more than one layer of conducting members and interlayer dielectric portion, such as silicon oxide interlayer films on the silicon nitride film, an opening is formed in said interlayer dielectric portion so as to reach the silicon nitride film. The substrate with thus defined opening is etched in an etching solution containing hydrogen fluoride acid therein to remove away the silicon oxide interlayer portion. As the silicon oxide interlayer portion is etched in the solution, this forms electrical interconnection that are not surrounded with any oxides. As the silicon nitride film works as an etching stopper layer in this etching above, the semiconductor devices are protected against the etching process.

    摘要翻译： 在衬底上形成氮化硅膜以覆盖半导体器件。 在氮化硅膜上形成多层导电构件和层间电介质部分（例如氧化硅中间膜）之后，在所述层间电介质部分中形成开口以到达氮化硅膜。 具有如此限定的开口的衬底在其中含有氟化氢酸的蚀刻溶液中被蚀刻以除去氧化硅夹层部分。 由于在溶液中蚀刻氧化硅中间层部分，这形成未被任何氧化物包围的电互连。 由于氮化硅膜在上述蚀刻中用作蚀刻停止层，因此保护半导体器件免受蚀刻处理。

    Resin composition, prepreg and metal foil-clad laminate
    4.
    发明授权
    Resin composition, prepreg and metal foil-clad laminate 有权

    公开(公告)号：US10028377B2

    公开(公告)日：2018-07-17

    申请号：US14348266

    申请日：2012-08-24

    申请人： Naoki Oka ,  Syouichi Itoh ,  Masataka Kudo ,  Michio Yaginuma

    发明人： Naoki Oka ,  Syouichi Itoh ,  Masataka Kudo ,  Michio Yaginuma

    IPC分类号： C08F299/02 ,  H05K1/03 ,  C08J5/24 ,  C08L71/12

    摘要： Provided are a resin composition having excellent electrical characteristics and heat resistance after moisture absorption, and being also excellent in flowing characteristics at the time of production of a laminate, and a prepreg, a metal foil-clad laminate and a resin sheet using the same. Used is a resin composition comprising a bifunctional phenylene ether oligomer (a) having a polyphenylene ether skeleton, an aralkyl-based cyanate ester compound (b), a bisphenol-based cyanate ester compound (c), an epoxy resin (d), a brominated carbonate oligomer (e), an inorganic filler (f), an alkoxynaphthol-based polymerization inhibitor (g) and/or a thioether-based polymerization inhibitor (h).

    Polysilicon etching method
    5.
    发明授权
    Polysilicon etching method 失效
    多晶硅蚀刻方法

    公开(公告)号：US5336365A

    公开(公告)日：1994-08-09

    申请号：US22634

    申请日：1993-02-25

    申请人： Hisashi Goda ,  Yasutoshi Asahina ,  Masayuki Hashimoto ,  Naoki Oka

    发明人： Hisashi Goda ,  Yasutoshi Asahina ,  Masayuki Hashimoto ,  Naoki Oka

    IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213

    CPC分类号： H01L21/32137

    摘要： A method of etching a polysilicon film specimen by an electronic cyclotron resonance etching technique or a microwave plasma etching technique includes the first process in which a mixed gas containing Cl.sub.2 and HBr is used as a process gas for etching, the Cl.sub.2 occupying 50-70 vol. % of the whole mixed gas; and the second process in which a mixed gas containing HBr and He is used, with HBr being in a proportion of 20-50 vol. % of the mixed gas, and a low bias voltage from -100 to -30 volts is applied to a specimen carrier. Further, in the first and second processes, a mixed gas containing HBr and He is used, with HBr being in a proportion of 20-50 vol. %, and a relatively high bias voltage from -250 to -100 volts is applied to the specimen carrier in the first process, while a low bias voltage from -100 to -30 volts is applied to the same in the second process. According to the present invention, a polysilicon film can be etched without causing undercut and with high dimensional accuracy.

    摘要翻译： 通过电子回旋共振蚀刻技术或微波等离子体蚀刻技术蚀刻多晶硅膜试样的方法包括使用含有Cl 2和HBr的混合气体作为蚀刻处理气体的第一工序，Cl 2占据50〜70体积％ 。 全混合气的百分比; 使用含有HBr和He的混合气体的第二种方法，HBr为20-50体积％。 混合气体的比例以及-100〜-30伏特的低偏压被施加到试样载体上。 此外，在第一和第二工序中，使用含有HBr和He的混合气体，HBr为20〜50体积％。 ％，并且在第一工艺中将样品载体施加从-250到-100伏特的相对高的偏置电压，而在第二过程中将-100至-30伏特的低偏压施加到样品载体。 根据本发明，可以蚀刻多晶硅膜而不引起底切和高尺寸精度。