摘要:
Cleaning liquid supply nozzles 32 are provided within a processing tank 30 for cleaning semiconductor wafers W. A distilled water source 31 and the cleaning liquid supply nozzles 32 are connected via a distilled water supply pipeline 33 and a chemical supply tank 36 and the cleaning liquid supply nozzles 32 are connected via a chemical supply pipeline 35. A flow-rate adjustment valve 37 is provided in the distilled water supply pipeline 33, and the supply of distilled water from the distilled water supply pipeline 33 to the processing tank 30 and the supply of a chemical from the chemical supply pipeline 35 to the processing tank 30 are switched by a switching valve 34. A temperature sensor 39 is disposed within the processing tank 30 for detecting the temperature of a processing liquid (the chemical or rinse liquid) therein and a CPU 40 controls the flow-rate adjustment valve 37 and the switching valve 34 on the basis of a temperature signal from the temperature sensor 39, so that the time required for the processing can be determined from the temperature of the cleaning liquid, thus improving the cleaning capability and cleaning precision.
摘要:
A cleaning method for cleaning, an object to be, processed. The object is cleaned by immersing the object into a cleaning liquid within a processing tank. The cleaning method includes the steps of: detecting the temperature of the cleaning liquid in which the object to be processed is immersed or to be immersed, and generating a corresponding temperature signal; determining an immersion time for the immersion of the object in the cleaning liquid, based on the temperature signal; and immersing the object to be processed in the cleaning liquid, for the immersion time.
摘要:
A cleaning equipment generally comprises: a cleaning bath 30 for storing therein a cleaning solution to allow a semiconductor wafer W to be dipped in the cleaning solution to clean the surface of the wafer W; a cleaning solution supply pipe 33 for connecting the cleaning bath 30 to a pure water supply source 31; a chemical storing container 34 for storing therein a chemical; a chemical supply pipe 36 for connecting the cleaning solution supply pipe 33 to the chemical storing container 34 via an injection shut-off valve 35; and a diaphragm pump 37 for injecting a predetermined amount of chemical from the chemical storing container 34 into pure water flowing through the cleaning solution supply pipe 33. The temperature of the cleaning solution in the cleaning bath 30 is detected by, e.g., a temperature sensor 44. On the basis of a detection signal outputted from the temperature sensor 44, the amount of the chemical injected by the diaphragm pump 37 is controlled so that the concentration of the chemical is a predetermined concentration. Thus, a predetermined amount of chemical can be injected so as to clean the wafer W with a predetermined concentration of chemical.
摘要:
A substrate washing apparatus includes a bath, a washing solution supply source, a first path for allowing the washing solution overflowing from the bath, a rinse solution supply source, a second path for passing the rinse solution, a common path communicating with the first and second paths and also with a bottom of the bath, a first valve, a second valve, a discharge path branched from the first path, and a control section, wherein the first valve includes a first body for opening/closing the first path, a third path arranged parallel to the first path and having a diameter smaller than a diameter of the first path, and a second body for opening/closing the third path, so that the first body is opened and the second body is closed, to allow the washing solution to flow into the bath, and on the other hand, the first body is closed, the second body is opened, to allow the rinse solution to flow into the bath, and the washing solution remaining in the first and third paths is discharged together with the rinse solution through the discharge path.
摘要:
A cleaning tank 30 stores a cleaning liquid to clean the surfaces of semiconductor wafers W immersed in the cleaning liquid. A cleaning liquid supply pipe 33 connects the cleaning tank 30 to a pure water supply source 31. A chemical liquid container 34 stores a chemical liquid, and a chemical liquid supply pipe 36 connects the cleaning liquid supply pipe 33 to the chemical liquid container 34 via an infusion open/close switching valve 35, and a chemical liquid feed means is interposed in the chemical liquid supply pipe 36. The chemical liquid feed means is a reciprocal pump, such as diaphragm pump 37. Thus, a predetermined quantity of the chemical liquid can be infused into pure water or to a drying gas generator to ensure that the chemical liquid of a predetermined concentration be available for washing or drying treatment, regardless of fluctuations in flow amount or pressure of pure water or a drying gas carrier gas.
摘要:
A cleaning equipment generally comprises: a cleaning bath 30 for storing therein a cleaning solution to allow a semiconductor wafer W to be dipped in the cleaning solution to clean the surface of the wafer W; a cleaning solution supply pipe 33 for connecting the cleaning bath 30 to a pure water supply source 31; a chemical storing container 34 for storing therein a chemical; a chemical supply pipe 36 for connecting the cleaning solution supply pipe 33 to the chemical storing container 34 via an injection shut-off valve 35; and a diaphragm pump 37 for injecting a predetermined amount of chemical from the chemical storing container 34 into pure water flowing through the cleaning solution supply pipe 33. The temperature of the cleaning solution in the cleaning bath 30 is detected by, e.g., a temperature sensor 44. On the basis of a detection signal outputted from the temperature sensor 44, the amount of the chemical injected by the diaphragm pump 37 is controlled so that the concentration of the chemical is a predetermined concentration. Thus, a predetermined amount of chemical can be injected so as to clean the wafer W with a predetermined concentration of chemical.
摘要:
A cleaning tank 30 stores a cleaning liquid to clean the surfaces of semiconductor wafers W immersed in the cleaning liquid. A cleaning liquid supply pipe 33 connects the cleaning tank 30 to a pure water supply source 31. A chemical liquid container 34 stores a chemical liquid, and a chemical liquid supply pipe 36 connects the cleaning liquid supply pipe 33 to the chemical liquid container 34 via an infusion open/close switching valve 35, and a chemical liquid feed means is interposed in the chemical liquid supply pipe 36. The chemical liquid feed means is a reciprocal pump, such as diaphragm pump 37. Thus, a predetermined quantity of the chemical liquid can be infused into pure water or to a drying gas generator to ensure that the chemical liquid of a predetermined concentration be available for washing or drying treatment, regardless of fluctuations in flow amount or pressure of pure water or a drying gas carrier gas.
摘要:
A method of washing substrates arranged at a substantially equal pitch internal in a cassette which includes steps of (a) transferring the substrates to a holder a pitch interval narrower than the arrangement pitch interval in said cassette; (b) supplying a washing solution into a processing bath; (c) conveying the holder holding the substrates into the processing bath; (d) dipping the substrates in the washing solution in the processing bath to wash the substrates; and (e) supplying a rinse solution into the processing bath to substitute the washing solution with the rinse solution to rinse the substrates in the processing bath.
摘要:
A liquid treatment apparatus includes a substrate holder (21) that holds a substrate horizontally and rotates the substrate, a treatment liquid nozzle (82) that supplies a treatment liquid to the substrate held by the substrate holder, a cup (40) that is arranged outside of a peripheral edge of the substrate held by the substrate holder and receives the treatment liquid which has been supplied to the substrate by the treatment liquid nozzle, a top plate (32) that covers the substrate held by the substrate holder from above, a top plate rotation driving mechanism that rotates the top plate, and a liquid receiving member (130) that surrounds a peripheral edge of the top plate and has a circular liquid receiving space (132).
摘要:
The present invention provides a substrate cleaning method capable of removing particles from the entire surface of a substrate to be processed at a high removing efficiency. In the substrate cleaning method according to the present invention, a substrate to be processed W is immersed in a cleaning liquid in a cleaning tank 12. Then, ultrasonic waves are generated in the cleaning liquid contained in the cleaning tank 12, so that the substrate W is subjected to an ultrasonic cleaning process. The step of generating ultrasonic waves includes a step of generating ultrasonic waves in the cleaning tank while the cleaning liquid is being supplied into the cleaning tank. A supply rate at which the cleaning liquid is supplied into the cleaning tank at a certain timing in the step of generating ultrasonic waves differs from a supply rate at which the cleaning liquid is supplied into the cleaning tank at another timing in the step of generating ultrasonic waves.