公开(公告)号：US20140061661A1

公开(公告)日：2014-03-06

申请号：US13804453

申请日：2013-03-14

申请人： Naoya SAKO ,  Takashi Ohara ,  Yoshiki Inoue ,  Yuki Shibutani ,  Yoshihito Kawauchi ,  Kazuyuki Takeichi ,  Yasunori Nagahama

发明人： Naoya SAKO ,  Takashi Ohara ,  Yoshiki Inoue ,  Yuki Shibutani ,  Yoshihito Kawauchi ,  Kazuyuki Takeichi ,  Yasunori Nagahama

IPC分类号： H01L33/32 ,  H01L21/308

CPC分类号： H01L33/22 ,  C30B25/183 ,  C30B25/186 ,  C30B29/20 ,  C30B29/403 ,  C30B29/406 ,  C30B33/08 ,  C30B33/10 ,  C30B33/12 ,  H01L21/02002 ,  H01L21/308 ,  H01L33/007 ,  H01L33/24 ,  H01L33/32 ,  H01L2933/0091

摘要： [Technical Problem]A sapphire substrate and a method for manufacturing the same are provided, which enables growth of a nitride semiconductor having excellent crystallinity and can achieve a nitride semiconductor light emitting element having excellent light extraction efficiency.[Solution to Problem]A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element, wherein the projection is substantially pyramidal-shaped having a pointed top and constituted by a plurality of side surfaces, wherein the side surface has an inclined angle of between 53° and 59° from a bottom surface of the projection, and wherein the side surface is crystal-growth-suppressed surface on which growth of nitride semiconductor is suppressed relative to the substrate surface located between the adjacent projections.

摘要翻译： 技术问题提供一种蓝宝石基板及其制造方法，其能够使结晶度优异的氮化物半导体的生长成为可以实现具有优异的光提取效率的氮化物半导体发光元件。 [问题的解决方案]蓝宝石衬底，其在其上生长氮化物半导体的主表面上设置有多个突起，以形成氮化物半导体发光元件，其中所述突起基本上是金字塔形的，具有尖顶，并由 多个侧面，其中所述侧表面与所述突起的底面具有在53°和59°之间的倾斜角，并且其中所述侧表面是相对于所述侧表面抑制氮化物半导体生长的结晶生长抑制表面 位于相邻突起之间的基底表面。

公开(公告)号：US08957433B2

公开(公告)日：2015-02-17

申请号：US13804453

申请日：2013-03-14

申请人： Naoya Sako ,  Takashi Ohara ,  Yoshiki Inoue ,  Yuki Shibutani ,  Yoshihito Kawauchi ,  Kazuyuki Takeichi ,  Yasunori Nagahama

发明人： Naoya Sako ,  Takashi Ohara ,  Yoshiki Inoue ,  Yuki Shibutani ,  Yoshihito Kawauchi ,  Kazuyuki Takeichi ,  Yasunori Nagahama

IPC分类号： H01L33/32 ,  C30B25/18 ,  C30B29/20 ,  C30B29/40 ,  C30B33/08 ,  C30B33/10 ,  C30B33/12 ,  H01L21/308

CPC分类号： H01L33/22 ,  C30B25/183 ,  C30B25/186 ,  C30B29/20 ,  C30B29/403 ,  C30B29/406 ,  C30B33/08 ,  C30B33/10 ,  C30B33/12 ,  H01L21/02002 ,  H01L21/308 ,  H01L33/007 ,  H01L33/24 ,  H01L33/32 ,  H01L2933/0091

摘要： A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element. The projections have a substantially triangular pyramidal-shape the projections having a plurality of side surfaces and a pointed top. The side surfaces have an inclination angle of between 53° and 59° from a bottom of the projections. The side surfaces are crystal-growth suppressed surfaces on which a growth of the nitride semiconductor is suppressed relative to a portion of the principal surface located between adjacent projections. A bottom of the projections has a substantially triangular shape having three outwardly curved arc-shaped sides, and each of the side surfaces has a substantially triangular shape having vertexes located at the top of the projection and at both ends of a respective side of the bottom of the projection.

摘要翻译： 蓝宝石衬底，其在其上生长氮化物半导体的主表面上设置有多个突起，以形成氮化物半导体发光元件。 突起具有基本上三角锥形的突起，其具有多个侧表面和尖顶。 侧表面与凸起的底部之间具有53°和59°之间的倾斜角度。 侧表面是相对于位于相邻突起之间的主表面的一部分而抑制氮化物半导体的生长的晶体生长抑制表面。 突起的底部具有三个具有三个向外弯曲的弧形侧面的三角形形状，并且每个侧表面具有基本上三角形的形状，其顶点位于突出部的顶部并且在底部的相应侧的两端 的投影。