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    Method and apparatus for modeling electromagnetic interactions in electrical circuit metalizations to simulate their electrical characteristics
    1.
    发明授权
    Method and apparatus for modeling electromagnetic interactions in electrical circuit metalizations to simulate their electrical characteristics 有权
    用于对电路金属化中的电磁相互作用进行建模以模拟其电气特性的方法和装置

    公开(公告)号：US06367053B1

    公开(公告)日：2002-04-02

    申请号：US09283395

    申请日：1999-04-01

    申请人： Nathan R. Belk ,  Michel Ranjit Frei

    发明人： Nathan R. Belk ,  Michel Ranjit Frei

    IPC分类号： G06F1750

    CPC分类号： G06F17/5036

    摘要： Metalization structures are modeled by employing automatic substrate grounding and shielding generation in conjunction with a design and simulation process for modeling the charge distributions and the interactions of these charge distributions on metalization structures arising from voltages and currents flowing in metalization structures. By generating and, then, employing a grounding structure that is optimized to strongly screen the metalization structure being designed and simulated, the requirement is eliminated for the accurate incorporation of the strongly dependent long range metalization sub unit to sub unit charge distribution coupling from the charge distribution determination process. In one embodiment of the invention, representative metalization sub units are selected, such as straight sections of infinitesimal length, right angle bends and intersections. Charge distributions are determined in those representative sub units based on the assumption that the integrated circuit substrate strongly suppresses any long range circuit interactions or frequency dependent effects. Then, based on the above assumption, self and mutual interactions are determined of the metalization sub units. Further, based on determined characteristics of those sub units, substrate grounding structures are determined and constructed that ensure the validity of the simulation assumption that the substrate grounding is adequate to strongly suppress any long range circuit interactions and/or frequency dependent effects. The determined self and mutual interactions can then be used as initial solutions to describe all interactions between similar metalization sub units in the overall physical metalization structure to be fabricated.

    摘要翻译： 金属化结构通过采用自动衬底接地和屏蔽生成结合设计和仿真过程进行建模，该设计和仿真过程用于建模电荷分布以及这些电荷分布对由金属化结构中流动的电压和电流产生的金属化结构的相互作用。 通过产生并且然后采用优化以强烈地筛选被设计和模拟的金属化结构的接地结构，消除了将强烈依赖的远程金属化子单元精确地结合到来自电荷的子单元电荷分布耦合的要求 分布确定过程。 在本发明的一个实施例中，选择代表性的金属化子单元，例如无穷小长度，直角弯曲和交叉点的直线段。 基于集成电路基板强烈地抑制任何长距离电路相互作用或频率相关效应的假设，在这些代表性的子单元中确定电荷分布。 然后，基于上述假设，确定了金属化子单元的自相互作用和相互作用。 此外，基于这些子单元的确定特性，确定和构造基板接地结构，以确保基板接地足以强烈抑制任何长距离电路相互作用和/或频率相关效应的模拟假设的有效性。 然后可以将所确定的自相互作用和相互作用用作描述待制造的整体物理金属化结构中相似的金属化子单元之间的所有相互作用的初始解。

    PROCESS TESTERS AND TESTING METHODOLOGY FOR THIN-FILM PHOTOVOLTAIC DEVICES
    2.
    发明申请
    PROCESS TESTERS AND TESTING METHODOLOGY FOR THIN-FILM PHOTOVOLTAIC DEVICES 审中-公开
    薄膜光伏器件的工艺测试和测试方法

    公开(公告)号：US20090102502A1

    公开(公告)日：2009-04-23

    申请号：US11876346

    申请日：2007-10-22

    申请人： Michel Ranjit Frei ,  Tzay-Fa Su

    发明人： Michel Ranjit Frei ,  Tzay-Fa Su

    IPC分类号： G01R31/26

    CPC分类号： H01L31/18

    摘要： The present invention generally relates to process testers and methods of fabricating the same using standard photovoltaic cell processes. In particular, the present invention relates to process tester layouts defined by laser scribing, methodology for creating process testers, methodology of using process testers for photovoltaic line diagnostics, placement of process testers in photovoltaic module production, and methodology for creating design rule testers.

    摘要翻译： 本发明一般涉及使用标准光伏电池工艺的工艺测试器及其制造方法。 特别地，本发明涉及由激光划线，用于创建过程测试仪的方法，使用光伏线路诊断的过程测试仪的方法，光伏模块生产中的过程测试仪的放置以及用于创建设计规则测试器的方法来定义的过程测试器布局。

    Process utilizing selective TED effect when forming devices with shallow junctions
    3.
    发明授权
    Process utilizing selective TED effect when forming devices with shallow junctions 失效
    当形成具有浅结的器件时，利用选择性TED效应的工艺

    公开(公告)号：US6136673A

    公开(公告)日：2000-10-24

    申请号：US23220

    申请日：1998-02-12

    申请人： Michel Ranjit Frei ,  Thi-Hong-Ha Vuong ,  Ya-Hong Xie

    发明人： Michel Ranjit Frei ,  Thi-Hong-Ha Vuong ,  Ya-Hong Xie

    IPC分类号： H01L21/22 ,  H01L21/225 ,  H01L21/265 ,  H01L21/331 ,  H01L21/8249

    CPC分类号： H01L29/66272 ,  H01L21/2257 ,  H01L21/26506 ,  H01L21/8249

    摘要： A process for device fabrication in which transient enhanced diffusion (TED) is used to obtain a desired distribution of dopants in a crystalline substrate is disclosed. In the process, at least two dopants and a non-dopant are introduced into the same region of a substrate. The diffusion of the dopants in the substrate during a subsequent thermal anneal is affected by the non-dopant. The amount of non-dopant introduced into the substrate is selected to obtain, in conjunction with the subsequent thermal anneal, the desired distribution of dopants in the substrate. The concentration of the non-dopant is in the range of about 6.times.10.sup.16 atoms/cm.sup.3 to about 3.times.10.sup.21 atoms/cm.sup.3. The substrate is then annealed at a temperature in the range of about 700.degree. C. to about 950.degree. C. to obtain the desired dopant profile.

    摘要翻译： 公开了一种用于器件制造的方法，其中使用瞬态增强扩散（TED）来获得晶体衬底中掺杂剂的期望分布。 在该过程中，将至少两种掺杂剂和非掺杂剂引入衬底的相同区域。 在随后的热退火期间掺杂剂在衬底中的扩散受非掺杂剂的影响。 选择引入到衬底中的非掺杂剂的量，以结合随后的热退火获得衬底中掺杂剂的期望分布。 非掺杂剂的浓度在约6×1016原子/ cm3至约3×1021原子/ cm3的范围内。 然后将衬底在约700℃至约950℃的温度下退火，以获得所需的掺杂剂分布。