公开(公告)号：US20180358474A1

公开(公告)日：2018-12-13

申请号：US15620846

申请日：2017-06-13

Applicant: National Applied Research Laboratories

Inventor： Kai-Shin Li ,  Bo-Wei Wu ,  Min-Cheng Chen ,  Jia-Min Shieh ,  Wen-Kuan Yeh

IPC: H01L29/786 ,  H01L29/08 ,  H01L29/06 ,  H01L29/24 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L21/02697 ,  H01L29/0657 ,  H01L29/0688 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/785 ,  H01L29/78603 ,  H01L29/78618

Abstract: A field-effect transistor structure having two-dimensional transition metal dichalcogenides includes a substrate, a source/drain structure, a two-dimensional (2D) channel layer, and a gate layer. The source/drain structure is disposed on the substrate and has a surface higher than a surface of the substrate. The 2D channel layer is disposed on the source and the drain and covers the space between the source and the drain. The gate layer is disposed between the source and the drain and covers the 2D channel layer. The field-effect transistor having two-dimensional transition metal dichalcogenides is a planar field-effect transistor or a fin field-effect transistor.

公开(公告)号：US10446694B2

公开(公告)日：2019-10-15

申请号：US15620846

申请日：2017-06-13

Applicant: National Applied Research Laboratories

Inventor： Kai-Shin Li ,  Bo-Wei Wu ,  Min-Cheng Chen ,  Jia-Min Shieh ,  Wen-Kuan Yeh

IPC: H01L29/786 ,  H01L29/08 ,  H01L29/06 ,  H01L29/24 ,  H01L29/78 ,  H01L29/66 ,  H01L21/02 ,  H01L29/423 ,  H01L29/778 ,  H01L29/10

Abstract: A field-effect transistor structure having two-dimensional transition metal dichalcogenides includes a substrate, a source/drain structure, a two-dimensional (2D) channel layer, and a gate layer. The source/drain structure is disposed on the substrate and has a surface higher than a surface of the substrate. The 2D channel layer is disposed on the source and the drain and covers the space between the source and the drain. The gate layer is disposed between the source and the drain and covers the 2D channel layer. The field-effect transistor having two-dimensional transition metal dichalcogenides is a planar field-effect transistor or a fin field-effect transistor.