公开(公告)号：US20210202782A1

公开(公告)日：2021-07-01

申请号：US16727846

申请日：2019-12-26

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Yung-Han Huang ,  Chung-Yen Lu ,  Jian-Long Ruan

IPC: H01L31/18 ,  H01L31/0336 ,  H01L31/0368 ,  H01L31/109 ,  H01L31/0224

Abstract: The present invention adopts an aluminum nitride substrate with great heat dissipation, great thermal conductivity, high electrical insulation, long service life, corrosion resistance, high temperature resistance, and stable physical characteristics. A high-quality zinc oxide film with a wide energy gap is fabricated on the aluminum nitride substrate by magnetron radio frequency (RF) sputtering. Compared with general vapor deposition, chemical vapor deposition and hydrothermal, the magnetron RF sputtering grows the high-quality zinc oxide film with few defects. The zinc oxide film with few defects concentration is an important key technology for short-wavelength optoelectronic devices, which decrease leakage currents of the optoelectronic devices, reduces flicker noise, and further improves its UV-visible rejection ratio.

公开(公告)号：US11049993B1

公开(公告)日：2021-06-29

申请号：US16727846

申请日：2019-12-26

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Yung-Han Huang ,  Chung-Yen Lu ,  Jian-Long Ruan

IPC: H01L31/18 ,  H01L31/0336 ,  H01L31/0224 ,  H01L31/109 ,  H01L31/0368

Abstract: The present invention adopts an aluminum nitride substrate with great heat dissipation, great thermal conductivity, high electrical insulation, long service life, corrosion resistance, high temperature resistance, and stable physical characteristics. A high-quality zinc oxide film with a wide energy gap is fabricated on the aluminum nitride substrate by magnetron radio frequency (RF) sputtering. Compared with general vapor deposition, chemical vapor deposition and hydrothermal, the magnetron RF sputtering grows the high-quality zinc oxide film with few defects. The zinc oxide film with few defects concentration is an important key technology for short-wavelength optoelectronic devices, which decrease leakage currents of the optoelectronic devices, reduces flicker noise, and further improves its UV-visible rejection ratio.

公开(公告)号：US20190172986A1

公开(公告)日：2019-06-06

申请号：US16034331

申请日：2018-07-12

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Chung-Yen Lu ,  Yung-Han Huang

IPC: H01L33/60 ,  H01L33/64 ,  C23C14/02 ,  C23C14/06 ,  C23C14/18 ,  C23C14/24 ,  C23C14/35 ,  C23C14/58 ,  C23C28/00

Abstract: A manufacturing method of a high reflection mirror with polycrystalline aluminum nitride includes (A) providing a polycrystalline aluminum nitride substrate having a polished surface, and utilizing a magnetron sputtering apparatus to react an aluminum target and a plasma formed of nitrogen and argon for forming an aluminum nitride film on the surface of the polycrystalline aluminum nitride substrate, wherein the aluminum nitride film fills into a hole or a gap generated by a lattice defect of the surface of the polycrystalline aluminum nitride substrate; (B) thinning, grinding and polishing the aluminum nitride film for planarizing the polycrystalline aluminum nitride substrate; (C) forming an aluminum coating layer on the aluminum nitride film by a vacuum coating apparatus; (D) forming a sliver coating layer on the aluminum coating layer by another vacuum coating apparatus; and (E) forming a surface-protecting layer on the sliver coating layer.