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公开(公告)号：US20190172986A1
公开(公告)日：2019-06-06
申请号：US16034331
申请日：2018-07-12
Inventor： Chung-Yen Lu , Yung-Han Huang
IPC: H01L33/60 , H01L33/64 , C23C14/02 , C23C14/06 , C23C14/18 , C23C14/24 , C23C14/35 , C23C14/58 , C23C28/00
Abstract: A manufacturing method of a high reflection mirror with polycrystalline aluminum nitride includes (A) providing a polycrystalline aluminum nitride substrate having a polished surface, and utilizing a magnetron sputtering apparatus to react an aluminum target and a plasma formed of nitrogen and argon for forming an aluminum nitride film on the surface of the polycrystalline aluminum nitride substrate, wherein the aluminum nitride film fills into a hole or a gap generated by a lattice defect of the surface of the polycrystalline aluminum nitride substrate; (B) thinning, grinding and polishing the aluminum nitride film for planarizing the polycrystalline aluminum nitride substrate; (C) forming an aluminum coating layer on the aluminum nitride film by a vacuum coating apparatus; (D) forming a sliver coating layer on the aluminum coating layer by another vacuum coating apparatus; and (E) forming a surface-protecting layer on the sliver coating layer.
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公开(公告)号：US10362684B1
公开(公告)日：2019-07-23
申请号：US16158239
申请日：2018-10-11
Inventor： Chia-Ting Lin , Jlin-Fuh Yau , Chung-Yen Lu , Yang-Kuo Kuo
IPC: H05K1/00 , H05K1/02 , H05K1/09 , H05K3/00 , H05K3/02 , H05K3/24 , B32B18/00 , C04B41/45 , C04B41/51 , C04B41/88 , H05K3/12 , H05K1/03 , H05K3/34
Abstract: The present invention relates to a method for improving adhesion between ceramic and a thick film circuit. The method is particularly directed to accelerate the formation of a ceramic-metal eutectic phase between the ceramic carrier and the metal circuit by solid-phase diffusion bonding under a positive atmosphere. A metallic conductive slurry or its oxide slurry is printed on the surface of the ceramic carrier to form a circuit pattern by a thick film screen printing. The ceramic carrier is placed in an oven with temperature controlled by a program under a positive-pressure atmosphere of an inert gas including nitrogen, hydrogen or their mixtures. An eutectic phase is formed between the ceramic carrier and the metal circuit under a high temperature eutectic condition to increase the adhesion between the ceramic carrier and the thick film circuit.
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Patent Agency Ranking
公开(公告)号：US11926909B2
公开(公告)日：2024-03-12
申请号：US17400147
申请日：2021-08-12
Inventor： Chia-Kan Hao , Kuan-Ting Lai , Chung-Yen Lu
CPC classification number: C25B15/083 , B01D19/0047 , B01D19/0052 , B01D19/0068 , B01D61/363 , C25B1/04 , C25B1/50
Abstract: To provide a gas-liquid separator of a water electrolysis system, comprising: a liquid feeding atomizer and a gas-liquid separation chamber, wherein the liquid feeding atomizer includes a liquid feeding pressurized tube; and an atomizing spray head, in which the atomizing spray head converts a gas-liquid mixed liquor after pressurized by the liquid feeding pressurized tube into a mist droplet gas-liquid mixture. The gas-liquid separation chamber comprises a spiral flowing way, and the spiral flowing way extends the time that the mist droplet gas-liquid mixture spraying into the gas-liquid separation chamber flows downwards to the bottom of the gas-liquid separation chamber; an ultrasonic oscillation mechanism; a stirrer; an internal reservoir; and a filter mechanism, which performs the gas-liquid separation for unbroken bubbles in the mist droplet gas-liquid mixture through the pore difference.
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公开(公告)号：US20210202782A1
公开(公告)日：2021-07-01
申请号：US16727846
申请日：2019-12-26
Inventor： Yung-Han Huang , Chung-Yen Lu , Jian-Long Ruan
IPC: H01L31/18 , H01L31/0336 , H01L31/0368 , H01L31/109 , H01L31/0224
Abstract: The present invention adopts an aluminum nitride substrate with great heat dissipation, great thermal conductivity, high electrical insulation, long service life, corrosion resistance, high temperature resistance, and stable physical characteristics. A high-quality zinc oxide film with a wide energy gap is fabricated on the aluminum nitride substrate by magnetron radio frequency (RF) sputtering. Compared with general vapor deposition, chemical vapor deposition and hydrothermal, the magnetron RF sputtering grows the high-quality zinc oxide film with few defects. The zinc oxide film with few defects concentration is an important key technology for short-wavelength optoelectronic devices, which decrease leakage currents of the optoelectronic devices, reduces flicker noise, and further improves its UV-visible rejection ratio.
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公开(公告)号：US20210123152A1
公开(公告)日：2021-04-29
申请号：US17076815
申请日：2020-10-22
Inventor： Kuan-Ting Lai , Chung-Yen Lu , Chia-Kan Hao
Abstract: A method for preparing a large-area catalyst electrode includes the following steps: (A) providing an iron compound, a cobalt compound and a nickel compound, and dissolving these metal compounds in a solvent to form a mixed metal compound solution, and (B) providing a cathode and an anode, and performing a cathodic electrochemical deposition to the cathode, the anode and the mixed metal compound solution in a condition of constant voltage or constant current through a two-electrode method, followed by obtaining a catalyst electrode from the cathode. In the method for preparing the large-area catalyst electrode of the present invention, the large-area catalyst electrode having good dual-function water electrolysis catalytic property can be prepared by the steps of preparing the electrolyte, the electrochemical deposition, and the like. The process is simple and energy-saving.
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6.发明授权公开(公告)号：US09814143B1
公开(公告)日：2017-11-07
申请号：US15362105
申请日：2016-11-28
Inventor： Chung-Yen Lu , Yi-Hsiuan Yu , Chia-Ting Lin , Lea-Hwung Leu
IPC: H01L21/00 , H05K3/00 , H01L21/48 , H01L23/498
CPC classification number: H01L21/486 , H01L23/15 , H01L23/3732 , H01L23/49827
Abstract: A method of forming a pattern with high aspect ratio on a polycrystalline aluminum nitride substrate comprises the steps of (A) providing an aluminum nitride substrate and forming a barrier layer on the aluminum nitride substrate; (B) etching the barrier layer with an energy beam to form at least one recess in the barrier layer; (C) plasma etching the substrate to deepen the recess into the aluminum nitride substrate; (D) removing the barrier layer to obtain the aluminum nitride substrate having at least one pattern with high aspect ratio. The method uses the energy beam to directly form a pattern on the barrier layer, and further employs plasma etching to prepare the aluminum nitride substrate having a pattern with high aspect ratio quickly and effectively.
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公开(公告)号：US11049993B1
公开(公告)日：2021-06-29
申请号：US16727846
申请日：2019-12-26
Inventor： Yung-Han Huang , Chung-Yen Lu , Jian-Long Ruan
IPC: H01L31/18 , H01L31/0336 , H01L31/0224 , H01L31/109 , H01L31/0368
Abstract: The present invention adopts an aluminum nitride substrate with great heat dissipation, great thermal conductivity, high electrical insulation, long service life, corrosion resistance, high temperature resistance, and stable physical characteristics. A high-quality zinc oxide film with a wide energy gap is fabricated on the aluminum nitride substrate by magnetron radio frequency (RF) sputtering. Compared with general vapor deposition, chemical vapor deposition and hydrothermal, the magnetron RF sputtering grows the high-quality zinc oxide film with few defects. The zinc oxide film with few defects concentration is an important key technology for short-wavelength optoelectronic devices, which decrease leakage currents of the optoelectronic devices, reduces flicker noise, and further improves its UV-visible rejection ratio.
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