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公开(公告)号：US09490428B2
公开(公告)日：2016-11-08
申请号：US14171033
申请日：2014-02-03
Inventor： Susumu Soeya , Toshimichi Shintani , Takahiro Odaka
CPC classification number: H01L45/144 , H01L27/2436 , H01L45/06 , H01L45/1608
Abstract: Technology capable of improving performance of a phase-change memory is provided. A recording/reproducing film contains Sn (tin), Sb (antimony), and Te (tellurium) and also contains an element X having a bonding strength with Te stronger than a bonding strength between Sn and Te and a bonding strength between Sb and Te. Here, the recording/reproducing film has a (SnXSb)Te alloy phase, and this (SnXSb)Te alloy phase includes a self-assembled superlattice structure.
Abstract translation: 提供了能够提高相变存储器的性能的技术。 记录/再现膜包含Sn（锡），Sb（锑）和Te（碲），并且还含有与Te和Te之间的接合强度比Te强的结合强度的元素X和Sb与Te之间的结合强度 。 这里，记录/再现膜具有（SnXSb）Te合金相，并且该（SnXSb）Te合金相包括自组装超晶格结构。
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公开(公告)号：US20150144865A1
公开(公告)日：2015-05-28
申请号：US14171033
申请日：2014-02-03
Inventor： Susumu Soeya , Toshimichi Shintani , Takahiro Odaka
CPC classification number: H01L45/144 , H01L27/2436 , H01L45/06 , H01L45/1608
Abstract: Technology capable of improving performance of a phase-change memory is provided. A recording/reproducing film contains Sn (tin), Sb (antimony), and Te (tellurium) and also contains an element X having a bonding strength with Te stronger than a bonding strength between Sn and Te and a bonding strength between Sb and Te. Here, the recording/reproducing film has a (SnXSb)Te alloy phase, and this (SnXSb)Te alloy phase includes a self-assembled superlattice structure.
Abstract translation: 提供了能够提高相变存储器的性能的技术。 记录/再现膜包含Sn（锡），Sb（锑）和Te（碲），并且还含有与Te和Te之间的接合强度比Te强的结合强度的元素X和Sb与Te之间的结合强度 。 这里，记录/再现膜具有（SnXSb）Te合金相，并且该（SnXSb）Te合金相包括自组装超晶格结构。
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公开(公告)号：US09082970B2
公开(公告)日：2015-07-14
申请号：US14050987
申请日：2013-10-10
Inventor： Susumu Soeya , Takahiro Odaka , Toshimichi Shintani , Junji Tominaga
CPC classification number: H01L45/144 , C30B29/46 , C30B29/68 , H01L27/2436 , H01L45/06 , H01L45/1625 , Y10T428/24975
Abstract: A phase-change memory and a semiconductor recording reproducing device capable of reducing consumed power are provided. A SnxTe100-x/Sb2Te3 SL film obtained by depositing a SnxTe100-x film and a Sb2Te3 film layer by layer contains a SnTe/Sb2Te3 superlattice phase formed of SnTe and Sb2Te3, a SnSbTe alloy phase, and a Te phase. The SnTe/Sb2Te3 superlattice phase is diluted by the SnSbTe alloy phase and the Te phase. Here, X of the SnxTe100-x film is represented by 4 at. %≦X≦55 at. %.
Abstract translation: 提供了能够降低消耗功率的相变存储器和半导体记录再现装置。 通过层叠Sn x Te100-x膜和Sb 2 Te 3膜而形成的Sn xTe100-x / Sb 2 Te 3 SL膜包含由SnTe，Sb 2 Te 3，SnSbTe合金相和Te相形成的SnTe / Sb2Te3超晶格相。 SnTe / Sb2Te3超晶相被SnSbTe合金相和Te相稀释。 这里，SnxTe100-x膜的X由4at表示。 ％＆nlE; X＆nlE; 55 at。 ％。
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公开(公告)号：US20140252304A1
公开(公告)日：2014-09-11
申请号：US14050987
申请日：2013-10-10
Inventor： Susumu Soeya , Takahiro Odaka , Toshimichi Shintani , Junji Tominaga
CPC classification number: H01L45/144 , C30B29/46 , C30B29/68 , H01L27/2436 , H01L45/06 , H01L45/1625 , Y10T428/24975
Abstract: A phase-change memory and a semiconductor recording/reproducing device capable of reducing consumed power are provided. A SnxTe100-x/Sb2Te3 SL film obtained by depositing a SnxTe100-x film and a Sb2Te3 film layer by layer contains a SnTe/Sb2Te3 superlattice phase formed of SnTe and Sb2Te3, a SnSbTe alloy phase, and a Te phase. The SnTe/Sb2Te3 superlattice phase is diluted by the SnSbTe alloy phase and the Te phase. Here, X of the SnxTe100-x film is represented by 4 at. %≦X≦55 at. %.
Abstract translation: 提供了能够降低消耗功率的相变存储器和半导体记录/再现装置。 通过层叠Sn xTe100-x膜和Sb 2 Te 3膜而形成的Sn xTe100-x / Sb 2 Te 3 SL膜包含由SnTe和Sb 2 Te 3，SnSbTe合金相和Te相形成的SnTe / Sb2Te3超晶格相。 SnTe / Sb2Te3超晶相被SnSbTe合金相和Te相稀释。 这里，SnxTe100-x膜的X由4at表示。 ％＆nlE; X＆nlE; 55 at。 ％。
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