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    CRYSTAL ORIENTATION LAYER LAMINATED STRUCTURE, ELECTRONIC MEMORY AND METHOD FOR MANUFACTURING CRYSTAL ORIENTATION LAYER LAMINATED STRUCTURE
    2.
    发明申请
    CRYSTAL ORIENTATION LAYER LAMINATED STRUCTURE, ELECTRONIC MEMORY AND METHOD FOR MANUFACTURING CRYSTAL ORIENTATION LAYER LAMINATED STRUCTURE 审中-公开
    晶体取向层叠结构，电子记忆及制造晶体取向层叠层结构的方法

    公开(公告)号：US20170062711A1

    公开(公告)日：2017-03-02

    申请号：US15349074

    申请日：2016-11-11

    Applicant: National Institute of Advanced Industrial Science and Technology

    Inventor： Yuta Saito ,  Junji Tominaga ,  Reiko Kondo

    IPC: H01L45/00 ,  C23C14/34

    CPC classification number: H01L45/06 ,  C23C14/34 ,  C30B23/025 ,  C30B29/46 ,  C30B29/68 ,  G11C11/161 ,  H01L27/105 ,  H01L29/82 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1625

    Abstract: A crystal orientation layer laminated structure capable of widely selecting materials for a base substrate and an electrode substrate, an electronic memory using the crystal orientation layer laminated structure and a method for manufacturing the crystal orientation layer laminated structure are provided. The crystal orientation layer laminated structure according to the present invention has such a feature as including a substrate, including an orientation control layer which is laminated on the substrate, which is made of any of germanium, silicon, tungsten, germanium-silicon, germanium-tungsten and silicon-tungsten, and whose thickness is at least 1 nm or more, and including a first crystal orientation layer which is laminated on the orientation control layer, which is made of any of SbTe, Sb2Te3, BiTe, Bi2Te3, BiSe and Bi2Se3 as a main component, and which is oriented in a certain crystal orientation

    Abstract translation: 提供能够广泛选择用于基底基板和电极基板的材料的晶体取向层层叠结构，使用晶体取向层叠结构的电子存储器以及晶体取向层层叠结构的制造方法。 根据本发明的晶体取向层层叠结构具有包括基板的特征，该基板包括层叠在基板上的取向控制层，该取向控制层由锗，硅，钨，锗 - 硅，锗 - 钨和硅 - 钨，并且其厚度为至少1nm以上，并且包括层叠在取向控制层上的由SbTe，Sb2Te3，BiTe，Bi2Te3，BiSe和Bi2Se3中的任一种制成的第一晶体取向层 作为主要成分，其取向为一定的晶体取向

    Solid memory
    3.
    发明授权
    Solid memory 有权
    固体记忆

    公开(公告)号：US09224460B2

    公开(公告)日：2015-12-29

    申请号：US13923447

    申请日：2013-06-21

    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

    Inventor： Junji Tominaga ,  James Paul Fons ,  Alexander Kolobov

    IPC: G11C13/00 ,  H01L45/00 ,  B82Y10/00 ,  G11B7/2433 ,  G11B7/243 ,  H01L29/15 ,  H01L29/18

    CPC classification number: G11C13/0004 ,  B82Y10/00 ,  G11B7/2433 ,  G11B2007/24314 ,  G11B2007/24316 ,  H01L29/15 ,  H01L29/18 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1625

    Abstract: Recording and erasing of data in PRAM have hitherto been performed based on a change in physical characteristics caused by primary phase-transformation of a crystalline state and an amorphous state of a chalcogen compound including Te which serves as a recording material. Since, however, a recording thin film is formed of a polycrystal but not a single crystal, a variation in resistance values occurs and a change in volume caused upon phase-transition has placed a limit on the number of times of readout of the record. In one embodiment, the above problem is solved by preparing a solid memory having a superlattice structure with a thin film containing Sb and a thin film containing Te. The solid memory can realize the number of times of repeated recording and erasing of 1015.

    Abstract translation: 迄今为止，基于由作为记录材料的包含Te的硫属化合物的结晶状态和非晶状态的初相相变引起的物理特性的变化，已经进行了PRAM中的数据的记录和擦除。 然而，由于记录薄膜由多晶而不是单晶形成，所以发生电阻值的变化，并且相变所导致的体积变化对记录的读出次数设定了限制。 在一个实施方案中，通过制备具有含有Sb的薄膜和含有Te的薄膜的超晶格结构的固体存储器来解决上述问题。 固态存储器可以实现1015次重复记录和擦除次数。

    METHOD OF INITIALIZING MULTIFERROIC ELEMENT
    5.
    发明申请
    METHOD OF INITIALIZING MULTIFERROIC ELEMENT 审中-公开

    公开(公告)号：US20180043448A1

    公开(公告)日：2018-02-15

    申请号：US15558227

    申请日：2016-02-22

    Applicant: National Institute of Advanced Industrial Science and Technology

    Inventor： Junji Tominaga ,  Yuta Saito

    IPC: B23H5/04 ,  H01L29/82

    Abstract: A method of initializing a multiferroic element for obtaining a stable element operation includes applying at least one selected from a group consisting of an electric field and a magnetic field to the multiferroic element under a temperature condition equal to or higher than a phase transition temperature. The multiferroic element has a laminated structural body including a first alloy layer and a second alloy layer. The first alloy layer is formed by using any of antimony-tellurium, bismuth-tellurium and bismuth-selenium as a principal component. The second alloy layer is laminated on the first alloy layer, and formed by using a compound represented by the following general formula (1) as a principal component. The second alloy layer is configured to undergo phase transition between a reset phase and a set phase. Electric polarization is not caused in the reset phase, but caused in the set phase. The second alloy layer undergoes the phase transition from the reset phase to the set phase at the phase transition temperature.[Chemical Formula 1] M1-xTex   (1) Here, in the above-mentioned general formula (1), M represents an atom of any of germanium, aluminum and silicon, and x represents a numerical value of 0.5 or more and lower than 1.

    Method of initializing multiferroic element
    7.
    发明授权
    Method of initializing multiferroic element 有权

    公开(公告)号：US10543545B2

    公开(公告)日：2020-01-28

    申请号：US15558227

    申请日：2016-02-22

    Applicant: National Institute of Advanced Industrial Science and Technology

    Inventor： Junji Tominaga ,  Yuta Saito

    IPC: B21H5/04 ,  H01L29/82 ,  B23H5/04 ,  H01L29/16

    Abstract: A method of initializing a multiferroic element for obtaining a stable element operation includes applying at least one selected from a group consisting of an electric field and a magnetic field to the multiferroic element under a temperature condition equal to or higher than a phase transition temperature. The multiferroic element has a laminated structural body including a first alloy layer and a second alloy layer. The first alloy layer is formed by using any of antimony-tellurium, bismuth-tellurium and bismuth-selenium as a principal component. The second alloy layer is laminated on the first alloy layer, and formed by using a compound represented by the following general formula (1) as a principal component. The second alloy layer is configured to undergo phase transition between a reset phase and a set phase. Electric polarization is not caused in the reset phase, but caused in the set phase. The second alloy layer undergoes the phase transition from the reset phase to the set phase at the phase transition temperature.[Chemical Formula 1] M1-xTex   (1) Here, in the above-mentioned general formula (1), M represents an atom of any of germanium, aluminum and silicon, and x represents a numerical value of 0.5 or more and lower than 1.

    SOLID MEMORY
    8.
    发明申请
    SOLID MEMORY 有权
    固体存储器

    公开(公告)号：US20130286725A1

    公开(公告)日：2013-10-31

    申请号：US13923447

    申请日：2013-06-21

    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

    Inventor： Junji Tominaga ,  James Paul Fons ,  Alexander Kolobov

    IPC: G11C13/00

    CPC classification number: G11C13/0004 ,  B82Y10/00 ,  G11B7/2433 ,  G11B2007/24314 ,  G11B2007/24316 ,  H01L29/15 ,  H01L29/18 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1625

    Abstract: Recording and erasing of data in PRAM have hitherto been performed based on a change in physical characteristics caused by primary phase-transformation of a crystalline state and an amorphous state of a chalcogen compound including Te which serves as a recording material. Since, however, a recording thin film is formed of a polycrystal but not a single crystal, a variation in resistance values occurs and a change in volume caused upon phase-transition has placed a limit on the number of times of readout of the record. In one embodiment, the above problem is solved by preparing a solid memory having a superlattice structure with a thin film containing Sb and a thin film containing Te. The solid memory can realize the number of times of repeated recording and erasing of 1015.

    Abstract translation: 迄今为止，基于由作为记录材料的包含Te的硫属化合物的结晶状态和非晶状态的初相相变引起的物理特性的变化，已经进行了PRAM中的数据的记录和擦除。 然而，由于记录薄膜由多晶而不是单晶形成，所以发生电阻值的变化，并且相变所导致的体积变化对记录的读出次数设定了限制。 在一个实施方案中，通过制备具有含有Sb的薄膜和含有Te的薄膜的超晶格结构的固体存储器来解决上述问题。 固态存储器可以实现1015次重复记录和擦除次数。

    Solid memory
    10.
    发明授权
    Solid memory 有权
    固体记忆

    公开(公告)号：US09153315B2

    公开(公告)日：2015-10-06

    申请号：US13923454

    申请日：2013-06-21

    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

    Inventor： Junji Tominaga ,  James Paul Fons ,  Alexander Kolobov

    IPC: H01L45/00 ,  G11C13/00 ,  B82Y10/00 ,  G11B7/2433 ,  G11B7/243 ,  H01L29/15 ,  H01L29/18

    CPC classification number: G11C13/0009 ,  B82Y10/00 ,  G11B7/2433 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24316 ,  H01L29/15 ,  H01L29/18 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1625

    Abstract: Recording and erasing of data in PRAM have hitherto been performed based on a change in physical characteristics caused by primary phase-transformation of a crystalline state and an amorphous state of a chalcogen compound including Te which serves as a recording material. Since, however, a recording thin film is formed of a polycrystal but not a single crystal, a variation in resistance values occurs and a change in volume caused upon phase-transition has placed a limit on the number of times of readout of record. In one embodiment, the above problem is solved by preparing a solid memory having a superlattice structure of thin films including Ge and thin films including Sb. The solid memory can realize the number of times of repeated recording and erasing of 1015.

    Abstract translation: 迄今为止，基于由作为记录材料的包含Te的硫属化合物的结晶状态和非晶状态的初相相变引起的物理特性的变化，已经进行了PRAM中的数据的记录和擦除。 然而，由于记录薄膜由多晶而不是单晶形成，所以发生电阻值的变化，并且由相变引起的体积变化对记录的读出次数设定了限制。 在一个实施例中，通过制备具有包括Ge的薄膜和包括Sb的薄膜的超晶格结构的固体存储器来解决上述问题。 固态存储器可以实现1015次重复记录和擦除次数。

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