公开(公告)号：US20090023267A1

公开(公告)日：2009-01-22

申请号：US12234280

申请日：2008-09-19

申请人： Nicolas Daval ,  Sebastien Kerdiles ,  Cecile Aulnette

发明人： Nicolas Daval ,  Sebastien Kerdiles ,  Cecile Aulnette

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/31055 ,  H01L21/31116

摘要： A method for reducing roughness of an exposed surface of an insulator layer on a substrate, by depositing an insulator layer on a substrate wherein the insulator layer includes an exposed rough surface opposite the substrate, and then smoothing the exposed rough surface of the insulator layer by exposure to a gas plasma in a chamber. The chamber contains therein a gas at a pressure of greater than 0.25 Pa but less than 30 Pa, and the gas plasma is created using a radiofrequency generator applying to the insulator layer a power density greater than 0.6 W/cm2 but less than 10 W/cm2 for at least 10 seconds to less than 200 seconds. Substrate bonding and layer transfer may be carried out subsequently to transfer the thin layer of substrate and the insulator layer to a second substrate.

摘要翻译： 一种通过在衬底上沉积绝缘体层来减小衬底上的绝缘体层的暴露表面的粗糙度的方法，其中绝缘体层包括与衬底相对的暴露的粗糙表面，然后通过 暴露于室内的气体等离子体。 该室包含大于0.25Pa但小于30Pa的压力的气体，并且使用射频发生器产生气体等离子体，所述射频发生器施加到绝缘体层的功率密度大于0.6W / cm 2但小于10W / cm2至少10秒至小于200秒。 衬底接合和层转移可以随后进行以将衬底和绝缘体层的薄层转移到第二衬底。

公开(公告)号：US20070020947A1

公开(公告)日：2007-01-25

申请号：US11481701

申请日：2006-07-05

申请人： Nicolas Daval ,  Sebastien Kerdiles ,  Cecile Aulnette

发明人： Nicolas Daval ,  Sebastien Kerdiles ,  Cecile Aulnette

IPC分类号： H01L21/31

CPC分类号： H01L21/76254 ,  H01L21/31055 ,  H01L21/31116

摘要： A method for reducing roughness of an exposed surface of an insulator layer on a substrate, by depositing an insulator layer on a substrate wherein the insulator layer includes an exposed rough surface opposite the substrate; treating the first substrate to form a zone of weakness beneath the insulator layer; and smoothing the exposed rough surface of the insulator layer by exposure to a gas plasma in a chamber. The chamber contains therein a gas at a pressure of greater than 0.25 Pa but less than 30 Pa, and the gas plasma is created using a radio frequency generator applying to the insulator layer a power density greater than 0.6 W/cm2 but less than 10 W/cm2 for at least 10 seconds to less than 200 seconds. Substrate bonding and layer transfer may be carried out subsequently to transfer the thin layer of substrate to the insulator layer and to a second substrate.

摘要翻译： 一种通过在衬底上沉积绝缘体层来减小衬底上的绝缘体层的暴露表面的粗糙度的方法，其中绝缘体层包括与衬底相对的暴露的粗糙表面; 处理所述第一衬底以在所述绝缘体层下方形成弱化区; 以及通过暴露于室中的气体等离子体来平滑所述绝缘体层的暴露的粗糙表面。 该室中含有大于0.25Pa但小于30Pa的压力的气体，并且使用射频发生器产生气体等离子体，所述射频发生器施加到绝缘体层，功率密度大于0.6W / cm 2， 但小于10W / cm 2，持续至少10秒至小于200秒。 衬底结合和层转移可以随后进行以将衬底的薄层转移到绝缘体层和第二衬底。

公开(公告)号：US08183128B2

公开(公告)日：2012-05-22

申请号：US12234280

申请日：2008-09-19

申请人： Nicolas Daval ,  Sebastien Kerdiles ,  Cécile Aulnette

发明人： Nicolas Daval ,  Sebastien Kerdiles ,  Cécile Aulnette

IPC分类号： H01L21/46

CPC分类号： H01L21/76254 ,  H01L21/31055 ,  H01L21/31116

摘要： A method for reducing roughness of an exposed surface of an insulator layer on a substrate, by depositing an insulator layer on a substrate wherein the insulator layer includes an exposed rough surface opposite the substrate, and then smoothing the exposed rough surface of the insulator layer by exposure to a gas plasma in a chamber. The chamber contains therein a gas at a pressure of greater than 0.25 Pa but less than 30 Pa, and the gas plasma is created using a radiofrequency generator applying to the insulator layer a power density greater than 0.6 W/cm2 but less than 10 W/cm2 for at least 10 seconds to less than 200 seconds. Substrate bonding and layer transfer may be carried out subsequently to transfer the thin layer of substrate and the insulator layer to a second substrate.

摘要翻译： 一种通过在衬底上沉积绝缘体层来减小衬底上的绝缘体层的暴露表面的粗糙度的方法，其中绝缘体层包括与衬底相对的暴露的粗糙表面，然后通过 暴露于室内的气体等离子体。 该室包含大于0.25Pa但小于30Pa的压力的气体，并且使用射频发生器产生气体等离子体，所述射频发生器施加到绝缘体层的功率密度大于0.6W / cm 2但小于10W / cm2至少10秒至小于200秒。 衬底接合和层转移可以随后进行以将衬底和绝缘体层的薄层转移到第二衬底。

公开(公告)号：US07446019B2

公开(公告)日：2008-11-04

申请号：US11481701

申请日：2006-07-05

申请人： Nicolas Daval ,  Sebastien Kerdiles ,  Cécile Aulnette

发明人： Nicolas Daval ,  Sebastien Kerdiles ,  Cécile Aulnette

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254 ,  H01L21/31055 ,  H01L21/31116

摘要： A method for reducing roughness of an exposed surface of an insulator layer on a substrate, by depositing an insulator layer on a substrate wherein the insulator layer includes an exposed rough surface opposite the substrate; treating the first substrate to form a zone of weakness beneath the insulator layer; and smoothing the exposed rough surface of the insulator layer by exposure to a gas plasma in a chamber. The chamber contains therein a gas at a pressure of greater than 0.25 Pa but less than 30 Pa, and the gas plasma is created using a radio frequency generator applying to the insulator layer a power density greater than 0.6 W/cm2 but less than 10 W/cm2 for at least 10 seconds to less than 200 seconds. Substrate bonding and layer transfer may be carried out subsequently to transfer the thin layer of substrate to the insulator layer and to a second substrate.

摘要翻译： 一种通过在衬底上沉积绝缘体层来减小衬底上的绝缘体层的暴露表面的粗糙度的方法，其中绝缘体层包括与衬底相对的暴露的粗糙表面; 处理所述第一衬底以在所述绝缘体层下方形成弱化区; 以及通过暴露于室中的气体等离子体来平滑所述绝缘体层的暴露的粗糙表面。 该室中含有大于0.25Pa但小于30Pa的压力的气体，并且使用射频发生器产生气体等离子体，该射频发生器施加到绝缘体层上，功率密度大于0.6W / cm 2， 但小于10W / cm 2，持续至少10秒至小于200秒。 衬底结合和层转移可以随后进行以将衬底的薄层转移到绝缘体层和第二衬底。

公开(公告)号：US08461018B2

公开(公告)日：2013-06-11

申请号：US13153709

申请日：2011-06-06

申请人： Eric Neyret ,  Sebastien Kerdiles

发明人： Eric Neyret ,  Sebastien Kerdiles

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： A method and/or system are provided for producing a structure comprising a thin layer of semiconductor material on a substrate. The method includes creating an area of embrittlement in the thickness of a donor substrate, bonding the donor substrate with a support substrate and detaching the donor substrate at the level of the area of embrittlement to transfer a thin layer of the donor substrate onto the support substrate. The method also includes thermal treatment of this resulting structure to stabilize the bonding interface between the thin layer and the substrate support. The invention also relates to the structures obtained by such a process.

摘要翻译： 提供了一种方法和/或系统，用于产生包括在衬底上的薄层半导体材料的结构。 该方法包括在施主衬底的厚度上形成脆化区域，用支撑衬底粘合施主衬底，并将施主衬底分离在脆化区域的水平，以将施主衬底的薄层转移到支撑衬底上 。 该方法还包括对所得结构的热处理，以稳定薄层和基底支撑体之间的结合界面。 本发明还涉及通过这种方法获得的结构。

公开(公告)号：US20080014713A1

公开(公告)日：2008-01-17

申请号：US11788292

申请日：2007-04-19

申请人： Eric Neyret ,  Sebastien Kerdiles

发明人： Eric Neyret ,  Sebastien Kerdiles

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： A method and/or system are provided for producing a structure comprising a thin layer of semiconductor material on a substrate. The method includes creating an area of embrittlement in the thickness of a donor substrate, bonding the donor substrate with a support substrate and detaching the donor substrate at the level of the area of embrittlement to transfer a thin layer of the donor substrate onto the support substrate. The method also includes thermal treatment of this resulting structure to stabilize the bonding interface between the thin layer and the substrate support. The invention also relates to the structures obtained by such a process.

公开(公告)号：US20070093039A1

公开(公告)日：2007-04-26

申请号：US11567417

申请日：2006-12-06

申请人： Sebastien Kerdiles ,  Yves-Matthieu Le Vaillant

发明人： Sebastien Kerdiles ,  Yves-Matthieu Le Vaillant

IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L21/68707 ,  G01N19/04 ,  H01L21/67092 ,  Y10S156/943 ,  Y10T29/53683 ,  Y10T83/0267 ,  Y10T156/1132 ,  Y10T156/1168 ,  Y10T156/1978 ,  Y10T156/1983

摘要： A tool and method for disuniting two wafers, wherein at least one of the wafers is used in fabricating substrates for microelectronics, optoelectronics, or optics. The method includes the steps of temporarily affixing two gripper members to respective opposite faces of the wafers; and sufficiently displacing one of the gripper members relative to the other for inducing controlled flexing in at least one of the members and for exerting a force close to one edge of the wafers to assist in disuniting the wafers. If desired, the bonding energy between two wafers can be determined by measuring the force exerted during the displacement step or measuring the separation of the wafers while performing the disuniting operation.

摘要翻译： 一种用于分离两个晶片的工具和方法，其中至少一个晶片用于制造用于微电子学，光电子学或光学器件的衬底。 该方法包括以下步骤：将两个夹持件暂时固定到晶片的各个相对面上; 并且相对于另一个充分地移动夹持构件中的一个，用于在至少一个构件中引起受控的弯曲并且用于施加接近晶片的一个边缘的力以帮助使晶片脱离。 如果需要，可以通过测量在位移步骤期间施加的力或在执行分离操作时测量晶片的分离来确定两个晶片之间的结合能。

公开(公告)号：US20060228820A1

公开(公告)日：2006-10-12

申请号：US11447863

申请日：2006-06-07

申请人： Sebastien Kerdiles ,  Fabrice Letertre ,  Christophe Morales ,  Hubert Moriceau

发明人： Sebastien Kerdiles ,  Fabrice Letertre ,  Christophe Morales ,  Hubert Moriceau

IPC分类号： H01L21/00 ,  H01L21/30

CPC分类号： H01L21/02032 ,  H01L21/76254 ,  H01L21/76259 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods are provided for producing a transfer layer of a semiconductor material on a final substrate. In some embodiments, the transfer layer is produced on the final substrate by forming a layer of semiconductor material on an initial support, assembling that layer and a final substrate by metal bonding, and mechanically separating the initial support from the layer at a weak interface that initially attached the layer to the initial support. An intermediate substrate can be obtained which can be used to fabricate a variety of components such as light-emitting diodes or laser diodes. These techniques can produce a transfer layer on a final substrate and a recyclable initial support that can be detached from the transfer layer for recycling by a non-destructive mechanical release.

摘要翻译： 提供了用于在最终基板上制造半导体材料的转移层的方法。 在一些实施方案中，通过在初始载体上形成半导体材料层，通过金属键合组装该层和最终的基底，并在初始载体与薄层的弱界面机械分离，在最终的基底上产生转移层， 最初将层附加到初始支持。 可以获得可用于制造诸如发光二极管或激光二极管的各种部件的中间基板。 这些技术可以在最终的基底上产生转移层，并且可再循环的初始载体可以从转移层分离出来，以便通过非破坏性的机械释放再循环。

公开(公告)号：US08435897B2

公开(公告)日：2013-05-07

申请号：US12658655

申请日：2010-02-12

申请人： Aziz Alami-Idrissi ,  Sebastien Kerdiles ,  Walter Schwarzenbach

发明人： Aziz Alami-Idrissi ,  Sebastien Kerdiles ,  Walter Schwarzenbach

IPC分类号： H01L29/72

CPC分类号： H01L21/304 ,  H01L21/02032 ,  H01L21/76254

摘要： A method for reclaiming a surface of a substrate, wherein the surface, in particular a silicon surface, comprises a protruding residual topography, comprising at least the layer of a first material. By providing a filling material in the non-protruding areas of the surface of the substrate and the subsequent polishing, the reclaiming can be carried out such that the material consuming double-sided polishing step used in the prior art is no longer necessary.

摘要翻译： 一种用于回收衬底表面的方法，其中表面，特别是硅表面包括突出的残留形貌，至少包括第一材料层。 通过在衬底表面的非突出区域中提供填充材料和随后的抛光，可以进行回收，使得不再需要现有技术中使用的消耗双面抛光步骤的材料。

公开(公告)号：US20100323496A1

公开(公告)日：2010-12-23

申请号：US12742424

申请日：2008-03-26

申请人： Frederic Allibert ,  Sebastien Kerdiles

发明人： Frederic Allibert ,  Sebastien Kerdiles

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L24/27 ,  H01L24/33 ,  H01L2221/68318 ,  H01L2221/68368 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01061 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/3512 ,  H01L2924/00

摘要： The invention relates to a process for manufacturing a composite substrate comprising bonding a first substrate (10) onto a second semi-conducting substrate (30), characterized in that it includes, before bonding, the formation of a bonding layer (20) between the first and the second substrate, the bonding layer (20) comprising a plurality of islands (21) distributed over the surface of the first substrate (10) in a determined pattern and separated from one another by regions (22) of a different type, which are distributed in a complementary pattern, wherein the islands (21) are formed via a plasma treatment of the material of the first substrate (10).

摘要翻译： 本发明涉及一种用于制造复合衬底的方法，包括将第一衬底（10）接合到第二半导电衬底（30）上，其特征在于，其在接合之前包括在第二半导电衬底（30）之间形成结合层（20） 第一和第二衬底，所述接合层（20）包括以确定的图案分布在所述第一衬底（10）的表面上的多个岛（21），并且通过不同类型的区域（22）彼此分离， 其以互补图案分布，其中通过等离子体处理第一基板（10）的材料形成岛（21）。