公开(公告)号：US11977282B2

公开(公告)日：2024-05-07

申请号：US17619679

申请日：2019-07-02

申请人： Nippon Telegraph and Telephone Corporation

发明人： Tatsuro Hiraki ,  Shinji Matsuo ,  Tai Tsuchizawa

IPC分类号： G02F1/025 ,  G02F1/015

CPC分类号： G02F1/025 ,  G02F1/0156 ,  G02F2202/103 ,  G02F2202/105

摘要： A core, constituted by an amorphous undoped semiconductor (i type), which is formed on a lower clad layer, and a p-type layer and an n-type layer which are disposed on the lower clad layer with the core interposed therebetween and are formed in contact with the core are provided. The core is formed to be thicker than the p-type layer and the n-type layer. The p-type layer and the n-type layer are constituted by single crystal silicon.

公开(公告)号：US11415747B2

公开(公告)日：2022-08-16

申请号：US17055555

申请日：2019-05-09

申请人： Nippon Telegraph and Telephone Corporation

发明人： Tai Tsuchizawa ,  Takuma Aihara

IPC分类号： G02B6/122 ,  G02B6/132 ,  G02B6/12

摘要： Included are an optical waveguide including a first cladding layer formed on a substrate; a core formed on the first cladding layer; and a second cladding layer formed on the first cladding layer so as to cover the core. At least one of the first cladding layer and the second cladding layer is composed of a cladding material of silicon oxide containing deuterium atoms. The number of hydrogen atoms contained in the cladding material is smaller than the number of the deuterium atoms contained in the cladding material.

公开(公告)号：US20220085576A1

公开(公告)日：2022-03-17

申请号：US17421467

申请日：2020-01-17

申请人： Nippon Telegraph and Telephone Corporation

发明人： Takuma Aihara ,  Shinji Matsuo ,  Takaaki Kakitsuka ,  Tai Tsuchizawa ,  Tatsuro Hiraki

IPC分类号： H01S5/323 ,  H01S5/026 ,  H01S5/042 ,  H01S5/0625 ,  H01S5/0687

摘要： Provided is a tunable laser that prevents basic characteristics of the laser from deteriorating and enables a high-speed control of the oscillation wavelength. The tunable laser includes a semiconductor gain portion including a III-V compound semiconductor, an optical feedback portion configured to diffract light generated in the semiconductor gain portion and feed the diffracted light back to the semiconductor gain portion, and an optical modulation portion including an optical waveguide that contains doped indirect transition-type silicon. The semiconductor gain portion and the optical modulation portion are disposed so that optical modes thereof overlap each other, and the semiconductor gain portion includes an embedded active layer thin film of a type in which a current is injected in a lateral direction.

公开(公告)号：US20240230997A9

公开(公告)日：2024-07-11

申请号：US18547662

申请日：2021-02-25

申请人： Nippon Telegraph and Telephone Corporation

发明人： Xuejun Xu ,  Takehiko Tawara ,  Tai Tsuchizawa

IPC分类号： G02B6/13

CPC分类号： G02B6/131 ,  G02B2006/1208

摘要： An optical waveguide includes a cladding layer, a Si layer, a REO layer, and a cap layer. The REO layer is made of a single-crystal rare earth oxide, and is formed on the Si layer. The cap layer is formed on the REO layer. The cap layer may be made of a material transparent to light to be guided. The cap layer has a stripe shape extending in a direction in which light is guided.

公开(公告)号：US20220393430A1

公开(公告)日：2022-12-08

申请号：US17624426

申请日：2019-07-09

申请人： Nippon Telegraph and Telephone Corporation

发明人： Takuma Aihara ,  Shinji Matsuo ,  Tai Tsuchizawa ,  Tatsuro Hiraki

IPC分类号： H01S5/12 ,  H01S5/026

摘要： A semiconductor optical device includes a light emitting layer that emits light in a state of current injection; an optical waveguide in which a width or a thickness in an extending direction (y) of the light emitting layer varies along the extending direction; and a uniform diffraction grating having constant cycle, width and depth, wherein the light emitting layer, the optical waveguide and the uniform diffraction grating are arranged at positions where the light emitting layer, the optical waveguide, and the uniform diffraction grating are optically coupled to one another, the uniform diffraction grating is arranged above the light emitting layer, the optical waveguide is arranged below the light emitting layer, and the optical waveguide includes, in the extending direction, a first portion having a predetermined width, a second portion having a larger width than the width of the first portion, and a third portion having the same width as the width of the first portion.

公开(公告)号：US20220357604A1

公开(公告)日：2022-11-10

申请号：US17619679

申请日：2019-07-02

申请人： Nippon Telegraph and Telephone Corporation

发明人： Tatsuro Hiraki ,  Shinji Matsuo ,  Tai Tsuchizawa

IPC分类号： G02F1/025 ,  G02F1/015

摘要： A core, constituted by an amorphous undoped semiconductor (i type), which is formed on a lower clad layer, and a p-type layer and an n-type layer which are disposed on the lower clad layer with the core interposed therebetween and are formed in contact with the core are provided. The core is formed to be thicker than the p-type layer and the n-type layer. The p-type layer and the n-type layer are constituted by single crystal silicon.

公开(公告)号：US20220328704A1

公开(公告)日：2022-10-13

申请号：US17615976

申请日：2019-06-06

申请人： Nippon Telegraph and Telephone Corporation

发明人： Tai Tsuchizawa ,  Takuma Aihara ,  Tatsuro Hiraki

IPC分类号： H01L31/0232 ,  H01L31/103 ,  H01L31/028 ,  H01L31/18 ,  G02B6/122 ,  G02B6/132

摘要： A silicon nitride core is formed on a silicon core via a first silicon oxide layer, and a germanium pattern caused to selectively grow in an opening penetrating through a second silicon oxide layer formed on the silicon nitride core and the first silicon oxide layer is formed on a lower silicon pattern formed to be continuous with the silicon core, thereby constituting a Ge photodiode.

公开(公告)号：US12051884B2

公开(公告)日：2024-07-30

申请号：US17045003

申请日：2019-03-28

申请人： Nippon Telegraph and Telephone Corporation

发明人： Takuma Aihara ,  Shinji Matsuo ,  Tai Tsuchizawa ,  Takaaki Kakitsuka ,  Tatsurou Hiraki

IPC分类号： H01S5/10 ,  H01S5/02 ,  H01S5/026 ,  H01S5/14

CPC分类号： H01S5/1014 ,  H01S5/021 ,  H01S5/0261 ,  H01S5/142

摘要： A wavelength tunable laser formed on a substrate made of single-crystal silicon is provided. The wavelength tunable laser includes a light emitting portion made of a III-V compound semiconductor, and external resonators provided with an optical filter. Cores included in the external resonators are made of one of SiN, SiON, and SiOn (n is smaller than 2).

公开(公告)号：US11996489B2

公开(公告)日：2024-05-28

申请号：US17615976

申请日：2019-06-06

申请人： Nippon Telegraph and Telephone Corporation

发明人： Tai Tsuchizawa ,  Takuma Aihara ,  Tatsuro Hiraki

IPC分类号： H01L31/0232 ,  G02B6/122 ,  G02B6/132 ,  H01L31/028 ,  H01L31/103 ,  H01L31/18 ,  G02B6/12

CPC分类号： H01L31/02327 ,  G02B6/1228 ,  G02B6/132 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1808 ,  G02B2006/12061 ,  G02B2006/12123

摘要： A silicon nitride core is formed on a silicon core via a first silicon oxide layer, and a germanium pattern caused to selectively grow in an opening penetrating through a second silicon oxide layer formed on the silicon nitride core and the first silicon oxide layer is formed on a lower silicon pattern formed to be continuous with the silicon core, thereby constituting a Ge photodiode.

公开(公告)号：US20240134119A1

公开(公告)日：2024-04-25

申请号：US18547662

申请日：2021-02-25

申请人： Nippon Telegraph and Telephone Corporation

发明人： Xuejun Xu ,  Takehiko Tawara ,  Tai Tsuchizawa

IPC分类号： G02B6/13

CPC分类号： G02B6/131 ,  G02B2006/1208

摘要： An optical waveguide includes a cladding layer, a Si layer, a REO layer, and a cap layer. The REO layer is made of a single-crystal rare earth oxide, and is formed on the Si layer. The cap layer is formed on the REO layer. The cap layer may be made of a material transparent to light to be guided. The cap layer has a stripe shape extending in a direction in which light is guided.