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公开(公告)号：US07517758B2
公开(公告)日：2009-04-14
申请号：US11256430
申请日：2005-10-20
IPC分类号： H01L21/336
CPC分类号： H01L29/66787 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L29/66553 , H01L29/66666 , H01L29/7827 , H01L29/78642
摘要： The invention includes methods of forming epitaxial silicon-comprising material and methods of forming vertical transistors. In one implementation, a method of forming epitaxial silicon-comprising material includes providing a substrate comprising monocrystalline material. A first portion of the monocrystalline material is outwardly exposed while a second portion of the monocrystalline material is masked. A first silicon-comprising layer is epitaxially grown from the exposed monocrystalline material of the first portion and not from the monocrystalline material of the masked second portion. After growing the first silicon-comprising layer, the second portion of the monocrystalline material is unmasked. A second silicon-comprising layer is then epitaxially grown from the first silicon-comprising layer and from the unmasked monocrystalline material of the second portion. Other aspects and implementations are contemplated.
摘要翻译： 本发明包括形成外延含硅材料的方法和形成垂直晶体管的方法。 在一个实施方案中，形成外延含硅材料的方法包括提供包括单晶材料的衬底。 单晶材料的第一部分向外暴露，而单晶材料的第二部分被掩蔽。 第一含硅层从第一部分的暴露的单晶材料而不是被掩蔽的第二部分的单晶材料外延生长。 在生长第一含硅层之后，单晶材料的第二部分被未掩蔽。 然后从第一含硅层和第二部分的未掩模的单晶材料外延生长第二含硅层。 考虑了其他方面和实现。
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公开(公告)号：US07144779B2
公开(公告)日：2006-12-05
申请号：US10931924
申请日：2004-09-01
IPC分类号： H01L21/336
CPC分类号： H01L29/66787 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L29/66553 , H01L29/66666 , H01L29/7827 , H01L29/78642
摘要： The invention includes methods of forming epitaxial silicon-comprising material and methods of forming vertical transistors. In one implementation, a method of forming epitaxial silicon-comprising material includes providing a substrate comprising monocrystalline material. A first portion of the monocrystalline material is outwardly exposed while a second portion of the monocrystalline material is masked. A first silicon-comprising layer is epitaxially grown from the exposed monocrystalline material of the first portion and not from the monocrystalline material of the masked second portion. After growing the first silicon-comprising layer, the second portion of the monocrystalline material is unmasked. A second silicon-comprising layer is then epitaxially grown from the first silicon-comprising layer and from the unmasked monocrystalline material of the second portion. Other aspects and implementations are contemplated.
摘要翻译： 本发明包括形成外延含硅材料的方法和形成垂直晶体管的方法。 在一个实施方案中，形成外延含硅材料的方法包括提供包括单晶材料的衬底。 单晶材料的第一部分向外暴露，而单晶材料的第二部分被掩蔽。 第一含硅层从第一部分的暴露的单晶材料而不是被掩蔽的第二部分的单晶材料外延生长。 在生长第一含硅层之后，单晶材料的第二部分被未掩蔽。 然后从第一含硅层和第二部分的未掩模的单晶材料外延生长第二含硅层。 考虑了其他方面和实现。
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公开(公告)号：US07132355B2
公开(公告)日：2006-11-07
申请号：US10932129
申请日：2004-09-01
IPC分类号： H01L21/44
CPC分类号： H01L29/66787 , H01L21/0237 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L29/66742 , H01L29/78642
摘要： This invention includes methods of forming layers comprising epitaxial silicon, and field effect transistors. In one implementation, a method of forming a layer comprising epitaxial silicon comprises epitaxially growing a silicon-comprising layer from an exposed monocrystalline material. The epitaxially grown silicon comprises at least one of carbon, germanium, and oxygen present at a total concentration of no greater than 1 atomic percent. In one implementation, the layer comprises a silicon germanium alloy comprising at least 1 atomic percent germanium, and further comprises at least one of carbon and oxygen at a total concentration of no greater than 1 atomic percent. Other aspects and implementations are contemplated.
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公开(公告)号：US06987055B2
公开(公告)日：2006-01-17
申请号：US10755000
申请日：2004-01-09
CPC分类号： H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02639
摘要： The invention includes a method for selective deposition of semiconductor material. A substrate is placed within a reaction chamber. The substrate comprises a first surface and a second surface. The first and second surfaces are exposed to a semiconductor material precursor under conditions in which growth of semiconductor material from the precursor comprises a lag phase prior to a growth phase, and under which it takes longer for the growth phase to initiate on the second surface than on the first surface. The exposure of the first and second surfaces is conducted for a time sufficient for the growth phase to occur on the first surface, but not long enough for the growth phase to occur on the second surface.
摘要翻译： 本发明包括半导体材料的选择性沉积方法。 将基板放置在反应室内。 基板包括第一表面和第二表面。 第一表面和第二表面在半导体材料前体暴露于其中来自前体的半导体材料的生长在生长阶段之前包含滞后期的条件下，并且在该阶段生长阶段在第二表面上开始需要更长时间比 在第一个表面。 进行第一表面和第二表面的曝光足够长的时间，以使生长阶段在第一表面上发生，但是不足以使生长相发生在第二表面上。
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5.发明授权Methods of forming a layer comprising epitaxial silicon, and methods of forming field effect transistors 有权形成包含外延硅的层的方法以及形成场效应晶体管的方法公开(公告)号：US07531395B2
公开(公告)日：2009-05-12
申请号：US11035298
申请日：2005-01-12
IPC分类号： H01L21/84 , H01L21/8238 , H01L21/336
CPC分类号： H01L29/66787 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/02642
摘要： Methods of forming layers comprising epitaxial silicon, and methods of forming field effect transistors are disclosed. A method of forming a layer comprising epitaxial silicon includes etching an opening into a silicate glass-comprising material received over a monocrystalline material. The etching is conducted to the monocrystalline material effective to expose the monocrystalline material at a base of the opening. A silicon-comprising layer is epitaxially grown within the opening from the monocrystalline material exposed at the base of the opening. The silicate glass-comprising material is etched from the substrate effective to leave a free-standing projection of the epitaxially grown silicon-comprising layer projecting from the monocrystalline material which was at the base of the opening. Other implementations and aspects are contemplated.
摘要翻译： 公开了形成包含外延硅的层的方法和形成场效应晶体管的方法。 形成包含外延硅的层的方法包括将开口蚀刻成通过单晶材料接收的含硅玻璃的材料。 对单晶材料进行蚀刻，以有效地在开口的基部暴露单晶材料。 在开口内从暴露在开口底部的单晶材料外延生长含硅层。 从衬底上蚀刻含硅玻璃的材料有效地留下从开口底部的单晶材料突出的外延生长的含硅层的独立投影。 考虑其他实现和方面。
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公开(公告)号：US07439136B2
公开(公告)日：2008-10-21
申请号：US11730039
申请日：2007-03-29
IPC分类号： H01L21/336
CPC分类号： H01L29/66787 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L29/66553 , H01L29/66666 , H01L29/7827 , H01L29/78642
摘要： The invention includes methods of forming epitaxial silicon-comprising material and methods of forming vertical transistors. In one implementation, a method of forming epitaxial silicon-comprising material includes providing a substrate comprising monocrystalline material. A first portion of the monocrystalline material is outwardly exposed while a second portion of the monocrystalline material is masked. A first silicon-comprising layer is epitaxially grown from the exposed monocrystalline material of the first portion and not from the monocrystalline material of the masked second portion. After growing the first silicon-comprising layer, the second portion of the monocrystalline material is unmasked. A second silicon-comprising layer is then epitaxially grown from the first silicon-comprising layer and from the unmasked monocrystalline material of the second portion. Other aspects and implementations are contemplated.
摘要翻译： 本发明包括形成外延含硅材料的方法和形成垂直晶体管的方法。 在一个实施方案中，形成外延含硅材料的方法包括提供包括单晶材料的衬底。 单晶材料的第一部分向外暴露，而单晶材料的第二部分被掩蔽。 第一含硅层从第一部分的暴露的单晶材料而不是被掩蔽的第二部分的单晶材料外延生长。 在生长第一含硅层之后，单晶材料的第二部分被未掩蔽。 然后从第一含硅层和第二部分的未掩模的单晶材料外延生长第二含硅层。 考虑了其他方面和实现。
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公开(公告)号：US08035129B2
公开(公告)日：2011-10-11
申请号：US12820924
申请日：2010-06-22
IPC分类号： H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： H01L29/66787 , H01L21/0237 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L29/66742 , H01L29/78642
摘要： This invention includes methods of forming layers comprising epitaxial silicon, and field effect transistors. In one implementation, a method of forming a layer comprising epitaxial silicon comprises epitaxially growing a silicon-comprising layer from an exposed monocrystalline material. The epitaxially grown silicon comprises at least one of carbon, germanium, and oxygen present at a total concentration of no greater than 1 atomic percent. In one implementation, the layer comprises a silicon germanium alloy comprising at least 1 atomic percent germanium, and further comprises at least one of carbon and oxygen at a total concentration of no greater than 1 atomic percent. Other aspects and implementations are contemplated.
摘要翻译： 本发明包括形成包括外延硅和场效应晶体管的层的方法。 在一个实施方案中，形成包含外延硅的层的方法包括从暴露的单晶材料外延生长含硅层。 外延生长的硅包括以不超过1原子％的总浓度存在的碳，锗和氧中的至少一种。 在一个实施方案中，该层包括含有至少1原子％锗的硅锗合金，并且还包含总浓度不大于1原子％的碳和氧中的至少一种。 考虑了其他方面和实现。
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公开(公告)号：US07528424B2
公开(公告)日：2009-05-05
申请号：US11418582
申请日：2006-05-04
IPC分类号： H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： H01L29/66787 , H01L21/0237 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L29/66742 , H01L29/78642
摘要： This invention includes methods of forming layers comprising epitaxial silicon, and field effect transistors. In one implementation, a method of forming a layer comprising epitaxial silicon comprises epitaxially growing a silicon-comprising layer from an exposed monocrystalline material. The epitaxially grown silicon comprises at least one of carbon, germanium, and oxygen present at a total concentration of no greater than 1 atomic percent. In one implementation, the layer comprises a silicon germanium alloy comprising at least 1 atomic percent germanium, and further comprises at least one of carbon and oxygen at a total concentration of no greater than 1 atomic percent. Other aspects and implementations are contemplated.
摘要翻译： 本发明包括形成包括外延硅和场效应晶体管的层的方法。 在一个实施方案中，形成包含外延硅的层的方法包括从暴露的单晶材料外延生长含硅层。 外延生长的硅包括以不超过1原子％的总浓度存在的碳，锗和氧中的至少一种。 在一个实施方案中，该层包括含有至少1原子％锗的硅锗合金，并且还包含总浓度不大于1原子％的碳和氧中的至少一种。 考虑了其他方面和实现。
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9.发明申请Method of Forming a Layer Comprising Epitaxial Silicon, and a Field Effect Transistor 有权形成包含外延硅和场效应晶体管的层的方法公开(公告)号：US20100258857A1
公开(公告)日：2010-10-14
申请号：US12820924
申请日：2010-06-22
IPC分类号： H01L29/78
CPC分类号： H01L29/66787 , H01L21/0237 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L29/66742 , H01L29/78642
摘要： This invention includes methods of forming layers comprising epitaxial silicon, and field effect transistors. In one implementation, a method of forming a layer comprising epitaxial silicon comprises epitaxially growing a silicon-comprising layer from an exposed monocrystalline material. The epitaxially grown silicon comprises at least one of carbon, germanium, and oxygen present at a total concentration of no greater than 1 atomic percent. In one implementation, the layer comprises a silicon germanium alloy comprising at least 1 atomic percent germanium, and further comprises at least one of carbon and oxygen at a total concentration of no greater than 1 atomic percent. Other aspects and implementations are contemplated.
摘要翻译： 本发明包括形成包括外延硅和场效应晶体管的层的方法。 在一个实施方案中，形成包含外延硅的层的方法包括从暴露的单晶材料外延生长含硅层。 外延生长的硅包括以不超过1原子％的总浓度存在的碳，锗和氧中的至少一种。 在一个实施方案中，该层包括含有至少1原子％锗的硅锗合金，并且还包含总浓度不大于1原子％的碳和氧中的至少一种。 考虑了其他方面和实现。
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公开(公告)号：US07768036B2
公开(公告)日：2010-08-03
申请号：US12410179
申请日：2009-03-24
IPC分类号： H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： H01L29/66787 , H01L21/0237 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L29/66742 , H01L29/78642
摘要： This invention includes methods of forming layers comprising epitaxial silicon, and field effect transistors. In one implementation, a method of forming a layer comprising epitaxial silicon comprises epitaxially growing a silicon-comprising layer from an exposed monocrystalline material. The epitaxially grown silicon comprises at least one of carbon, germanium, and oxygen present at a total concentration of no greater than 1 atomic percent. In one implementation, the layer comprises a silicon germanium alloy comprising at least 1 atomic percent germanium, and further comprises at least one of carbon and oxygen at a total concentration of no greater than 1 atomic percent. Other aspects and implementations are contemplated.
摘要翻译： 本发明包括形成包括外延硅和场效应晶体管的层的方法。 在一个实施方案中，形成包含外延硅的层的方法包括从暴露的单晶材料外延生长含硅层。 外延生长的硅包括以不超过1原子％的总浓度存在的碳，锗和氧中的至少一种。 在一个实施方案中，该层包括含有至少1原子％锗的硅锗合金，并且还包含总浓度不大于1原子％的碳和氧中的至少一种。 考虑了其他方面和实现。
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