摘要:
A positively working resist material is disclosed, comprising a compound having at least one silyl ether group and capable of directly dissociating an Si-O-C bond upon irradiation with far ultraviolet rays, X-rays, an electron beam, or an ion beam. The resist material has high sensitivity to high energy radiation, excellent resistance to dry etching, and can be developed with an alkaline aqueous solution.
摘要:
Disclosed is a novel positive type photoresist composition comprising a 1,2-naphthoquinonediazido-5-(and/or -4-)sulfonic ester of a member selected from the group consisting of the polyhydroxy compounds represented by the following formula (I), (II) or (III) and an alkali-soluble resin: ##STR1## wherein the variables of Formula I are defined in the specification; ##STR2## wherein the variables of Formula II are defined in the specification; ##STR3## wherein the variables of Formula III are defined in the specification.
摘要:
A positive-working light-sensitive composition which comprises: (a) 0.5 to 80% by weight of a compound which has at least one group capable of being decomposed by an acid and whose solubility in an alkaline developer is increased by an acid; (b) 0.01 to 20% by weight of a disulfone compound represented by the following formula (I); R.sup.1 --SO.sub.2 --SO.sub.2 --R.sup.2 (I) wherein R.sup.1 and R.sup.2 may be the same or different and represent a substituted or unsubstituted alkyl, alkenyl or aryl group; and (c) 5 to 99.49% by weight of a resin insoluble in water and soluble in an alkaline water, wherein the compound of the component (a) has a molecular weight of not more than 2,000 and a boiling point of not less than 150.degree. C. and wherein a film of the composition having a thickness of 1 .mu.m has an optical density determined at 248 nm of not more than 1.4 before exposure to light and the optical density of the composition determined at 248 nm is reduced by exposure to light of 248 nm.
摘要:
A positive working light-sensitive composition which comprises:(a) 10 to 95% by weight of a compound which has at least one acid-decomposable group and whose solubility in an alkaline developer increases by the action of an acid,(b) 0.01 to 20% by weight of a disulfone compound represented by the formula (I):R.sup.1 --SO.sub.2 --SO.sub.2 --R.sup.2 (I) wherein R.sup.1 and R.sup.2 may be same or different and represent substituted or unsubstituted alkyl groups, substituted or unsubstituted alkenyl groups or substituted or unsubstituted aryl groups, and(c) 3 to 85% by weight of a water-insoluble but alkaline water-soluble resin, wherein the optical density at 248 nm of 1 .mu.m thick coating of the composition is not more than 1.4 and the optical density at 248 nm of the coating exposed to light of 248 nm is less than the optical density of the coating before exposed to light.The light-sensitive composition is highly responsive to light of Deep-UV regions and excellent in image resolution.
摘要:
A positive type or negative type light-sensitive composition providing high sensitivity and high resolution in the manufacture of a semiconductor device, and contains:(a) a compound which has at least one group capable of decomposing by acid and a solubility that is increased in an alkaline developing solution,(b) a compound which generates acid by an irradiation with actinic rays or radiation,(c) a compound which generates a base at 50.degree. C. or higher, and(d) a resin which is insoluble in water and soluble in an alkaline aqueous solution.
摘要:
A positive photoresist composition includes an alkali-soluble resin, a quinonediazide compound and a compound selected from the group consisting of compounds represented by formulae (I), (II) and (III): ##STR1## wherein R.sub.1 to R.sub.27, which may be the same or different, each represents a hydrogen atom, hydroxyl group, halogen atom, alkyl group, alkoxy group, nitro group, alkenyl group, aryl group, aralkyl group, alkoxycarbonyl group, arylcarbonyl group, acyloxy group, acyl group, aryloxy group or aralkoxy group; ##STR2## wherein R.sub.31 represents an organic group, single bond, ##STR3## R.sub.32 represents a hydrogen atom, monovalent organic group or ##STR4## R.sub.33 to R.sub.37, which may be the same or different, and in which not all four groups for each of R.sub.33 to R.sub.37 may be the same at the same time, each represents a hydrogen atom, hydroxyl group, halogen atom, alkyl group, alkoxy group or alkenyl group, with the proviso that at least one of R.sub.33 to R.sub.35 is a hydroxyl group; X represents a divalent organic group; and m represents an integer 0 or 1; ##STR5## wherein R.sub.41 to R.sub.44, which may be the same or different and in which not all four groups for each of R.sub.41 to R.sub.44 may be the same at the same time, each represents a hydrogen atom, hydroxyl group, halogen atom, alkyl group, alkoxy group or alkenyl group; R.sub.45 and R.sub.46 each represents a hydrogen atom, alkyl group or ##STR6## a and c each represents an integer 0 or 1; and b represents an integer from 1 to 4.
摘要翻译:正型光致抗蚀剂组合物包括碱溶性树脂,醌二叠氮化合物和选自由式(I),(II)和(III)表示的化合物的化合物:其中R 1至R 27, 可以相同或不同,分别表示氢原子,羟基,卤素原子,烷基,烷氧基,硝基,烯基,芳基,芳烷基,烷氧基羰基,芳基羰基,酰氧基,酰基, 芳氧基或芳烷氧基; (II)其中R31表示有机基团,单键,R32表示氢原子,一价有机基团或R33至R37,其可以相同或不同,并且其中并不全部为四 R 33〜R 37各自可以相同,各自表示氢原子,羟基,卤素原子,烷基,烷氧基或烯基,条件是R 33〜R 35中的至少一个为 羟基; X表示二价有机基团; m表示0或1的整数; (III)其中R41〜R44可以相同或不同,并且其中R41至R44中的每一个不是全部四个基团可以同时相同,各自表示氢原子,羟基,卤素 原子,烷基,烷氧基或烯基; R 45和R 46各自表示氢原子,烷基或者a和c各自表示0或1的整数; b表示1〜4的整数。
摘要:
A positive type photoresist composition which comprises an alkali soluble novolak resin and at least one light-sensitive material represented by the following general formulae (I) to (IV) to provide a resist pattern with high resolution, high reproduction fidelity, desirable sectional shape, wide latitude of development, high heat resistance and high storage stability: ##STR1## (wherein X represents --CO--, or --SO.sub.2 --; p represents an integer from 2 to 4; R's may be the same or different, each being --H, --OH, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryl group, a substituted or unsubstituted aralkyl group, a substituted or unsubstituted acyl group, a substituted or unsubstituted acyloxy group, ##STR2## provided that R always contains at least one of ##STR3## ; R.sub.1 represents ##STR4## a substituted or unsubstituted di- to tetra-valent alkyl group, or a substituted or unsubstituted di- to tetra-valent aromatic group; and l, m and n Represent O or an integer of from 1 to 3, provided that at least one of them is not zero).
摘要:
A positive type photoresist composition comprising at least one light-sensitive material, as defined herein, and an alkali-soluble novolak resin, has a high resolving power, particularly when used in semiconductor devices, accurately reproduces mask dimensions over a wide photomask line width range, from a resist pattern in a cross-sectional form having a high aspect ratio in a pattern having a line width of no greater than 1 .mu.m, has a wide developing latitude and excellent heat resistance.
摘要:
A silver halide photographic printing paper is described, comprising a support and a photographic layer containing a silver halide developing agent, wherein a dispersion of an oil-soluble brightening agent in a high boiling point organic solvent having a specific inductive capacity of 7.5 or less is contained in the photographic layer. This printing paper yields a background of high whiteness even when processed under rapid processing conditions.
摘要:
A novel positive type photoresist composition is provided, comprising an alkali-soluble novolak resin obtained by the condensation of substituted or unsubstituted phenols and aldehydes in the presence of a silica-magnesia solid catalyst and a light-sensitive material containing 1,2-naphthoquinone-diazido-5-(and/or -4-) sulfonate as main component.