-
公开(公告)号：US5887015A
公开(公告)日：1999-03-23
申请号：US763883
申请日：1996-12-11
CPC分类号： C30B15/14
摘要： A heater mechanism for a crystal pulling apparatus is disclosed. Electrodes made of copper or the like and disposed under a heater are connected to the heater via graphite members. A cover member is attached to each graphite member, so that the downwardly extending portion of the cover member surrounds the outer surface of the graphite member. Accordingly, a leak or splash of a melt is prevented from contacting the electrodes. The length of each graphite member is equal to or greater than the distance between the bottom surface of the heater and the top surface of a melt spill tray which distance is measured when the heater mechanism is raised The cover member is vertically slidable along the outer surface of each graphite member. Thus, even when a material melt leaks out from a crucible, the electrodes of the heater mechanism can be protected from a fusion damage or the like which would be otherwise caused by the leak of the melt.
摘要翻译： 公开了一种用于晶体拉制装置的加热器机构。 设置在加热器下方的由铜等制成的电极通过石墨部件连接到加热器。 盖构件附接到每个石墨构件，使得盖构件的向下延伸的部分围绕石墨构件的外表面。 因此，防止熔体的泄漏或飞溅与电极接触。 每个石墨构件的长度等于或大于加热器的底表面和熔体溢出托盘的上表面之间的距离，该加热器机构升高时测量的距离。盖构件沿着外表面可垂直滑动 的每个石墨构件。 因此，即使当材料熔体从坩埚中泄漏出来时，也可以保护加热器机构的电极免受由熔体泄漏引起的熔融损伤等的影响。
-
公开(公告)号：US5248378A
公开(公告)日：1993-09-28
申请号：US852612
申请日：1992-03-17
申请人： Tetsuhiro Oda , Izumi Fusegawa , Hirotoshi Yamagishi , Atsushi Iwasaki , Akiho Maeda , Shinobu Takeyasu , Nobuyoshi Fujimaki , Yukio Karasawa
发明人： Tetsuhiro Oda , Izumi Fusegawa , Hirotoshi Yamagishi , Atsushi Iwasaki , Akiho Maeda , Shinobu Takeyasu , Nobuyoshi Fujimaki , Yukio Karasawa
CPC分类号： C30B29/06 , C30B15/14 , Y10S117/90 , Y10T117/1068
摘要： A method of producing a Czochralski-grown silicon single crystal stably and efficiently with high production yield comprises the steps of setting pulling conditions such that at least a portion of a growing silicon single crystal having a temperature in excess of 1150.degree. C. is spaced upwardly from a surface of silicon melt by a distance greater than 280 mm; and pulling the growing silicon single crystal upward while maintaining the pulling conditions. The silicon single crystal produced by this method has an excellent oxide film dielectric breakdown strength. An apparatus for carrying out the method is also disclosed.
-
3.发明授权公开(公告)号：US09422635B2
公开(公告)日：2016-08-23
申请号：US13977864
申请日：2012-01-05
CPC分类号： C30B15/10 , C30B15/00 , C30B15/30 , C30B29/06 , Y10T117/1072
摘要： A single crystal production apparatus using the Czochralski method, includes: a crucible for holding raw material melt; a pedestal that supports the crucible and can be moved upward and downward; a crucible rotating shaft for rotating the crucible via the pedestal; and a melt receiver that is disposed below the crucible and provided with a center sleeve surrounding the pedestal, wherein, on the outer periphery of the pedestal, two or more grooves for preventing the raw material melt leaking from the crucible from dripping are provided. The single crystal production apparatus and single crystal production method can reliably prevent melt from reaching a metal portion below the pedestal even when the raw material melt in the crucible flows to the outside of the crucible in an unexpected accident or the like and runs down along the pedestal and thereby prevent damage to the apparatus and the occurrence of an accident.
摘要翻译： 使用切克劳斯基法的单晶制造装置包括：用于保持原料熔融的坩埚; 支撑坩埚并能够向上和向下移动的基座; 用于经由基座旋转坩埚的坩埚旋转轴; 以及设置在所述坩埚下方并且设置有围绕所述基座的中心套筒的熔体接收器，其中，在所述基座的外周上设置有用于防止原料熔融物从所述坩埚中漏出的两个或更多个凹槽。 即使在坩埚中熔融的原料在意外的事故等中流动到坩埚的外部并且沿着该坩埚的下方向下流动，单晶生产装置和单晶生产方法也可以可靠地防止熔体到达基座下方的金属部分 从而防止设备损坏和发生事故。
-
公开(公告)号：US20130276693A1
公开(公告)日：2013-10-24
申请号：US13977864
申请日：2012-01-05
CPC分类号： C30B15/10 , C30B15/00 , C30B15/30 , C30B29/06 , Y10T117/1072
摘要： A single crystal production apparatus using the Czochralski method, includes: a crucible for holding raw material melt; a pedestal that supports the crucible and can be moved upward and downward; a crucible rotating shaft for rotating the crucible via the pedestal; and a melt receiver that is disposed below the crucible and provided with a center sleeve surrounding the pedestal, wherein, on the outer periphery of the pedestal, two or more grooves for preventing the raw material melt leaking from the crucible from dripping are provided. The single crystal production apparatus and single crystal production method can reliably prevent melt from reaching a metal portion below the pedestal even when the raw material melt in the crucible flows to the outside of the crucible in an unexpected accident or the like and runs down along the pedestal and thereby prevent damage to the apparatus and the occurrence of an accident.
摘要翻译： 使用切克劳斯基法的单晶制造装置包括：用于保持原料熔融的坩埚; 支撑坩埚并能够向上和向下移动的基座; 用于经由基座旋转坩埚的坩埚旋转轴; 以及设置在所述坩埚下方并且设置有围绕所述基座的中心套筒的熔体接收器，其中，在所述基座的外周上设置有用于防止原料熔融物从所述坩埚中漏出的两个或更多个凹槽。 即使在坩埚中熔融的原料在意外的事故等中流向坩埚的外部时，单晶生产装置和单晶制造方法也可以可靠地防止熔体到达基座下方的金属部分，并且沿着 从而防止设备损坏和发生事故。
-
5.发明授权Member-handling mechanism, and member-handling jig for a crystal pulling apparatus 失效会员处理机构和用于晶体拉制装置的成员处理夹具
公开(公告)号：US5888298A
公开(公告)日：1999-03-30
申请号：US759223
申请日：1996-12-05
CPC分类号： C30B15/30 , C30B15/00 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1072
摘要： A method, mechanisms and jig for handling a member of a crystal pulling apparatus are disclosed. The crystal pulling apparatus grows a single crystal from a melt of a crystalline material by a CZ method. Handling of a graphite crucible or the like of the crystal pulling apparatus, including a vertical moving operation, a swinging operation, or the like, is performed using a crane and a lifting jig. This makes it possible to readily move the member of the crystal pulling apparatus vertically and otherwise without relying on manual labor.
摘要翻译： 公开了一种用于处理拉晶装置的构件的方法，机构和夹具。 晶体拉制装置通过CZ法从结晶材料的熔体中生长单晶。 使用起重机和提升夹具来执行包括垂直移动操作，摆动操作等的晶体牵引装置的石墨坩埚等的处理。 这使得可以在不依赖于手工劳动的情况下垂直地或以其他方式容易地移动晶体牵引装置的构件。
-
-
-
-
搜索结果
5 条记录 (耗时 0.022 秒)
