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公开(公告)号：US5887015A
公开(公告)日：1999-03-23
申请号：US763883
申请日：1996-12-11
CPC分类号： C30B15/14
摘要： A heater mechanism for a crystal pulling apparatus is disclosed. Electrodes made of copper or the like and disposed under a heater are connected to the heater via graphite members. A cover member is attached to each graphite member, so that the downwardly extending portion of the cover member surrounds the outer surface of the graphite member. Accordingly, a leak or splash of a melt is prevented from contacting the electrodes. The length of each graphite member is equal to or greater than the distance between the bottom surface of the heater and the top surface of a melt spill tray which distance is measured when the heater mechanism is raised The cover member is vertically slidable along the outer surface of each graphite member. Thus, even when a material melt leaks out from a crucible, the electrodes of the heater mechanism can be protected from a fusion damage or the like which would be otherwise caused by the leak of the melt.
摘要翻译： 公开了一种用于晶体拉制装置的加热器机构。 设置在加热器下方的由铜等制成的电极通过石墨部件连接到加热器。 盖构件附接到每个石墨构件，使得盖构件的向下延伸的部分围绕石墨构件的外表面。 因此，防止熔体的泄漏或飞溅与电极接触。 每个石墨构件的长度等于或大于加热器的底表面和熔体溢出托盘的上表面之间的距离，该加热器机构升高时测量的距离。盖构件沿着外表面可垂直滑动 的每个石墨构件。 因此，即使当材料熔体从坩埚中泄漏出来时，也可以保护加热器机构的电极免受由熔体泄漏引起的熔融损伤等的影响。
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公开(公告)号：US6136090A
公开(公告)日：2000-10-24
申请号：US249410
申请日：1999-02-12
申请人： Kenji Araki , Hideo Okamoto , Toshiharu Uesugi , Atsushi Iwasaki
发明人： Kenji Araki , Hideo Okamoto , Toshiharu Uesugi , Atsushi Iwasaki
CPC分类号： C30B29/06 , C30B15/14 , Y10T117/1068
摘要： A method of producing a single crystal by Czochralski method by contacting a seed crystal with a melt in a crucible, and then pulling it slowly to grow a single crystal ingot, wherein a pulling condition is controlled according to a cumulative time of use of a heater surrounding the crucible. The pulling conditions to be controlled may induce the relative position of the heater and the crucible, the number of rotations of the crucible, the number of rotations of the crystal, or an atmosphere pressure in the furnace and a gas volume of flowing. Also described is a method of producing a silicon single crystal by CZ method wherein a dispersion of impurity concentration in the crystal can be reduced, and a single crystal can be produced stably.
摘要翻译： 通过将晶种与坩埚中的熔体接触，然后缓慢拉动以生长单晶锭，通过切克劳斯基法制造单晶的方法，其中根据加热器的累积使用时间来控制拉伸条件 围着坩埚。 要控制的拉动条件可以引起加热器和坩埚的相对位置，坩埚的旋转数，晶体的旋转数或炉中的气氛压力和流动的气体体积。 还描述了通过CZ方法制造硅单晶的方法，其中可以减少晶体中杂质浓度的分散，并且可以稳定地产生单晶。
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公开(公告)号：US5394829A
公开(公告)日：1995-03-07
申请号：US35607
申请日：1993-03-23
CPC分类号： C30B15/00 , Y10T117/1032 , Y10T117/1064 , Y10T117/1068 , Y10T117/1088
摘要： A device for pulling a silicon single crystal is constructed so as to preclude deposition of a SiO-derived substance on graphite parts inside the device and prevent the graphite parts from deterioration, elongate the duration of continuous use of the device in a great measure, and simplify the disassembly and reassembly of the device.This device pulls a silicon single crystal in an atmosphere of inert gas by the Czochralski method, which device is chracterized by comprising a crucible 1 for accommodating a molten silicon mass 2, a heater 3 disposed round the periphery of the crucible 1, an outer member 14 forming a pulling chamber 6 for accomodating the crucible 1, an inert gas inlet part 15 disposed in the upper part of the pulling chamber 6, and an inert gas outlet part 16 separated from the inert gas inlet part 15 in the same upper part of the pulling chamber 6.
摘要翻译： 构造用于拉制单晶硅的装置，以防止SiO元素沉积在器件内的石墨部件上，防止石墨部件变质，延长器件连续使用的持续时间，以及 简化了装置的拆卸和重新组装。 该装置通过Czochralski法在惰性气体气氛中拉出硅单晶，该装置通过包括用于容纳熔融硅团2的坩埚1，设置在坩埚1的周边的加热器3，外部构件 形成用于容纳坩埚1的拉动室6，设置在拉动室6的上部的惰性气体入口部15和与惰性气体出口部16分离的惰性气体出口部16，惰性气体出口部16在同一上部 拉动室6。
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4.发明授权Method and mechanism for lifting gas flow-guide cylinder of a crystal pulling apparatus 失效用于提升拉制装置的气体导流筒的方法和机构
公开(公告)号：US5795383A
公开(公告)日：1998-08-18
申请号：US760964
申请日：1996-12-05
CPC分类号： C30B15/00 , C30B15/14 , Y10T117/10 , Y10T117/1068 , Y10T117/1088
摘要： A method and a mechanism for lifting a gas flow-guide cylinder of a crystal pulling apparatus are disclosed. The crystal pulling apparatus includes a crucible for accommodating a crystalline material and for melting the crystalline material through heating, and a gas flow-guide cylinder capable of being moved upward/downward above the crucible. The crystal pulling apparatus is operated to grow a single crystal from the crystalline material by a pulling method. When a solid crystalline material is to be placed in the crucible, the gas flow-guide cylinder is moved upward to thereby separate the bottom end of the gas flow-guide cylinder away from the top portion of the crucible. This prevents the crystalline material from coming into contact with the gas flow-guide cylinder.
摘要翻译： 公开了一种用于提升拉制装置的气体导流筒的方法和机构。 该拉晶装置包括用于容纳结晶材料并通过加热熔化结晶材料的坩埚以及能够在坩埚上方向上/向下移动的气体导流筒。 晶体拉制装置通过牵引方法从结晶材料生长单晶。 当将固体结晶材料放置在坩埚中时，气体导向气缸向上移动，从而使气体导流器的底端远离坩埚顶部分离。 这样可以防止结晶材料与气体导流筒接触。
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5.发明授权公开(公告)号：US09200380B2
公开(公告)日：2015-12-01
申请号：US13125899
申请日：2009-10-19
CPC分类号： C30B29/06 , C30B15/305 , C30B35/00 , Y10T117/1032 , Y10T117/1072
摘要： The present invention provides a silicon single crystal manufacturing method for manufacturing a single crystal based on a horizontal magnetic field applied CZ method for pulling the single crystal while applying a horizontal magnetic field to a silicon raw material melt accommodated in a quartz crucible by a magnetic field application device, comprising: measuring a center position of the magnetic field generated by the magnetic field application device; and deviating the measured center position of the magnetic field from a pulling member serving as a rotation axis of the single crystal in a horizontal direction within the range of 2 to 14 mm before manufacture of the single crystal and/or during manufacture of the single crystal. As a result, the silicon single crystal manufacturing method and manufacturing apparatus that enable manufacture of a single crystal while suppressing fluctuations in diameter and in oxygen concentration without a variation caused due to characteristics of the apparatus can be provided.
摘要翻译： 本发明提供了一种基于水平磁场施加CZ方法制造单晶的硅单晶制造方法，用于在通过磁场对容纳在石英坩埚中的硅原料熔体施加水平磁场的同时拉动单晶 应用装置，包括：测量由所述磁场施加装置产生的磁场的中心位置; 并且在制造单晶之前和/或在单晶制造期间，将测量的中心位置偏离作为单晶的旋转轴的拉构件在水平方向上在2至14mm的范围内 。 结果，可以提供能够在抑制由于设备的特性引起的变化的同时抑制直径和氧浓度的波动的同时制造单晶的硅单晶制造方法和制造装置。
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公开(公告)号：US5009864A
公开(公告)日：1991-04-23
申请号：US426293
申请日：1989-10-25
申请人： Hiroyuki Ibe , Toshiharu Uesugi
发明人： Hiroyuki Ibe , Toshiharu Uesugi
IPC分类号： C30B15/00 , C30B15/02 , H01L21/208
CPC分类号： C30B15/02 , C30B15/00 , Y10T117/1056
摘要： A recharging device suitable for use in a Czochralski-type monocrystal ingot pulling apparatus, includes a shaft (3) which is suspended from a pulling element (1), a ring slider (8) capable of sliding along the shaft, a stopper (20) for stopping the downward movement of the ring slider, a pair of hooks (9, 11, 13) pivotably connected to the shaft below the ring slider and capable of assuming hooking and unhooking positions, and a pair of rods (16) each having one end connected to the hooks such that when the ring slider slides upward relative to the shaft the pair of the rods cause the hooks to assume their unhooking position, and when the ring slider slides downward relative to the shaft the rods cause the hooks to assume their hooking position.
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7.发明申请公开(公告)号：US20110214605A1
公开(公告)日：2011-09-08
申请号：US13125899
申请日：2009-10-19
CPC分类号： C30B29/06 , C30B15/305 , C30B35/00 , Y10T117/1032 , Y10T117/1072
摘要： The present invention provides a silicon single crystal manufacturing method for manufacturing a single crystal based on a horizontal magnetic field applied CZ method for pulling the single crystal while applying a horizontal magnetic field to a silicon raw material melt accommodated in a quartz crucible by a magnetic field application device, comprising: measuring a center position of the magnetic field generated by the magnetic field application device; and deviating the measured center position of the magnetic field from a pulling member serving as a rotation axis of the single crystal in a horizontal direction within the range of 2 to 14 mm before manufacture of the single crystal and/or during manufacture of the single crystal. As a result, the silicon single crystal manufacturing method and manufacturing apparatus that enable manufacture of a single crystal while suppressing fluctuations in diameter and in oxygen concentration without a variation caused due to characteristics of the apparatus can be provided.
摘要翻译： 本发明提供了一种基于水平磁场施加CZ方法制造单晶的硅单晶制造方法，用于在通过磁场对容纳在石英坩埚中的硅原料熔体施加水平磁场的同时拉动单晶 应用装置，包括：测量由所述磁场施加装置产生的磁场的中心位置; 并且在制造单晶之前和/或在单晶制造期间，将测量的中心位置偏离作为单晶的旋转轴的拉构件在水平方向上在2至14mm的范围内 。 结果，可以提供能够在抑制由于设备的特性引起的变化的同时抑制直径和氧浓度的波动的同时制造单晶的硅单晶制造方法和制造装置。
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8.发明授权
公开(公告)号：US6153009A
公开(公告)日：2000-11-28
申请号：US270277
申请日：1999-03-16
申请人： Toshiharu Uesugi , Toshio Hisaichi , Izumi Fusegawa , Tomohiko Ohta , Tetsuya Igarashi , Tetsuhiro Oda
发明人： Toshiharu Uesugi , Toshio Hisaichi , Izumi Fusegawa , Tomohiko Ohta , Tetsuya Igarashi , Tetsuhiro Oda
摘要： In a Czochralski method for producing a silicon single crystal by growing the crystal, the pulling rate of the single crystal is gradually increased during formation of a tail part after formation of a predetermined or constant diameter part of the single crystal. The length t of the tail part is defined to be a or more, where a represents a distance from the tip end of the tail part to a position of an extraordinary oxygen precipitation area when the tail part is formed after the predetermined or constant diameter part is grown. Productivity and yield of the silicon single crystal are improved by preventing rapid change in temperature while the single crystal is separated from the melt in the tailing process, to suppress generation of an area where the amount of precipitated oxygen is extraordinarily large and an OSF ring due to rapid increase in temperature when the tail part is formed, in the predetermined or constant diameter part near the tail part.
摘要翻译： 在通过生长晶体生产硅单晶的切克劳斯基法中，在形成单晶的预定或恒定直径部分之后形成尾部部分期间，单晶的拉伸速率逐渐增加。 尾部的长度t被定义为一个或多个，其中a表示当尾部在预定的或恒定的直径部分之后形成时从尾部的末端到非常的氧沉淀区域的位置的距离 长大了 通过在拖尾工序中从熔体中分离单晶而防止温度快速变化，提高硅单晶的生产率和产率，抑制沉淀氧量异常大的区域和OSF环的产生 当尾部形成时，在靠近尾部的预定或恒定直径部分中的温度快速增加。
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