公开(公告)号：US08211228B2

公开(公告)日：2012-07-03

申请号：US11792693

申请日：2005-10-21

申请人： Ryoji Hoshi ,  Takahiro Yanagimachi

发明人： Ryoji Hoshi ,  Takahiro Yanagimachi

IPC分类号： C30B15/14

CPC分类号： C30B15/203 ,  C30B15/14 ,  C30B29/06

摘要： The present invention is a method for producing a single crystal that is a multi-pulling method for pulling a plurality of single crystals from a raw material melt in a same crucible in a chamber by a Czochralski method, comprising steps of: pulling a single crystal from a raw material melt ; then additionally charging polycrystalline raw material in a residual raw material melt without turning off power of a heater, and melting the polycrystalline raw material; then pulling a next single crystal; and repeating the steps and thereby pulling the plurality of single crystals.

摘要翻译： 本发明是一种用于制造单晶的方法，该单晶是通过切克劳斯基法（Czochralski method）在室内的同一坩埚中的原料熔融物中拉出多个单晶的多牵引方法，包括以下步骤：拉出单晶 从原料熔化; 然后在残留的原料熔体中另外加入多晶原料而不关闭加热器的电源，并熔化多晶原料; 然后拉下一个单晶; 并重复上述步骤，从而拉动多个单晶。

公开(公告)号：US08441623B2

公开(公告)日：2013-05-14

申请号：US12452492

申请日：2008-07-30

申请人： Takahiro Yanagimachi ,  Susumu Sonokawa

发明人： Takahiro Yanagimachi ,  Susumu Sonokawa

IPC分类号： G01N21/00

CPC分类号： C30B15/28 ,  C30B15/26 ,  Y10T117/1004

摘要： The invention is a method for detecting the diameter of a single crystal grown by the Czochralski method, wherein the diameter of a single crystal is detected by both a camera and a load cell, the diameter detected by the camera is corrected based on a difference between the diameter detected by the camera and the diameter calculated by the load cell and a correction coefficient α obtained in advance according to a growth rate of the single crystal, and a value obtained by the correction is set as the diameter of the single crystal, and a single crystal pulling apparatus including both a camera and a load cell for detecting the diameter of a single crystal to be pulled upwardly. As a result, it is possible to improve the measurement accuracy of the diameter of a large-diameter, heavy crystal and achieve the enhancement of yields and a reduction in variations in quality.

摘要翻译： 本发明是一种用于检测通过切克劳斯基法生长的单晶的直径的方法，其中通过照相机和称重传感器都检测单晶的直径，通过照相机检测的直径基于 由照相机检测的直径和由称重传感器计算的直径以及根据单晶的生长速率预先获得的校正系数α，并且通过校正获得的值被设置为单晶的直径，并且 包括相机和负载传感器的单晶拉制装置，用于检测要向上拉的单晶的直径。 结果，可以提高大直径，重晶体的直径的测量精度，并且实现产量的提高和质量变化的降低。

公开(公告)号：US20080184928A1

公开(公告)日：2008-08-07

申请号：US11792693

申请日：2005-10-21

申请人： Ryoji Hoshi ,  Takahiro Yanagimachi

发明人： Ryoji Hoshi ,  Takahiro Yanagimachi

IPC分类号： C30B15/00

CPC分类号： C30B15/203 ,  C30B15/14 ,  C30B29/06

摘要： The present invention is a method for producing a single crystal that is a multi-pulling method for pulling a plurality of single crystals 3 from a raw material melt 4 in a same crucible in a chamber by a Czochralski method, comprising steps of: pulling a single crystal 3 from a raw material melt 4; then additionally charging polycrystalline raw material in a residual raw material melt 4 without turning off power of a heater 7, and melting the polycrystalline raw material; then pulling a next single crystal 3; and repeating the steps and thereby pulling the plurality of single crystals 3; wherein in a case of setting a ratio of a pulling rate V and crystal temperature gradient G near a solid-liquid interface along a pulling axis direction when a straight body of the single crystal 3 is grown to be V/G, in order to control the V/G of each of the single crystals 3 to be pulled to a predetermined value, a pulling condition such as the pulling rate V is preliminarily modified according to an elapsed time from beginning of operation, before pulling the single crystal; and thereby the single crystal 3 having a desired defect region is grown. Thereby, a method for producing a single crystal by which wafer products of desired quality are produced in large quantity and stably is provided.

摘要翻译： 本发明是一种制造单晶的方法，该单晶是通过切克劳斯（Czochralski）法在室内的同一坩埚中从原料熔融物4拉出多个单晶3的多牵引方法，包括以下步骤： 单晶3从原料熔体4; 然后在残留的原料熔体4中另外加入多晶原料而不关闭加热器7的电源，并熔化多晶原料; 然后拉下一个单晶3; 并重复上述步骤，从而拉动多个单晶3; 在将单晶3的直体生长为V / G的情况下，在将固体 - 液体界面附近的拉伸速度V和晶体温度梯度G的比率设定为V / G的情况下，为了控制 要拉出单个晶体3的V / G到预定值，在拉动单晶之前，根据从操作开始的经过时间，预先修改诸如拉拔速度V的拉动条件; 从而生长具有所需缺陷区域的单晶3。 由此，提供了以大量稳定地制造具有期望质量的晶片产品的单晶的制造方法。

公开(公告)号：US20100128253A1

公开(公告)日：2010-05-27

申请号：US12452492

申请日：2008-07-30

申请人： Takahiro Yanagimachi ,  Susumu Sonokawa

发明人： Takahiro Yanagimachi ,  Susumu Sonokawa

IPC分类号： G01N21/00 ,  C30B15/26

CPC分类号： C30B15/28 ,  C30B15/26 ,  Y10T117/1004

摘要： The invention is a method for detecting the diameter of a single crystal grown by the Czochralski method, wherein the diameter of a single crystal is detected by both a camera and a load cell, the diameter detected by the camera is corrected based on a difference between the diameter detected by the camera and the diameter calculated by the load cell and a correction coefficient α obtained in advance according to a growth rate of the single crystal, and a value obtained by the correction is set as the diameter of the single crystal, and a single crystal pulling apparatus including both a camera and a load cell for detecting the diameter of a single crystal to be pulled upwardly. As a result, it is possible to improve the measurement accuracy of the diameter of a large-diameter, heavy crystal and achieve the enhancement of yields and a reduction in variations in quality.

摘要翻译： 本发明是一种用于检测通过切克劳斯基法生长的单晶的直径的方法，其中通过照相机和称重传感器都检测单晶的直径，通过照相机检测的直径基于 由照相机检测的直径和由称重传感器计算的直径以及根据单晶的生长速度预先获得的校正系数α，并且通过校正获得的值被设定为单晶的直径，并且 包括相机和负载传感器的单晶拉制装置，用于检测要向上拉的单晶的直径。 结果，可以提高大直径，重晶体的直径的测量精度，并且实现产量的提高和质量变化的降低。

公开(公告)号：US20060236919A1

公开(公告)日：2006-10-26

申请号：US10568186

申请日：2004-08-13

申请人： Izumi Fusegawa ,  Nobuaki Mitamuria ,  Takahiro Yanagimachi

发明人： Izumi Fusegawa ,  Nobuaki Mitamuria ,  Takahiro Yanagimachi

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B15/20 ,  C30B29/06 ,  Y10T117/1068

摘要： The present invention is a method for producing a single crystal in accordance with Czochralski method by flowing an inert gas downward in a chamber 1 of a single crystal-pulling apparatus 11 and surrounding a single crystal 3 pulled from a raw material melt 2 with a gas flow-guide cylinder 4, wherein when a single crystal within N region outside OSF region generated in a ring shape in the radial direction of the single crystal is pulled, the single crystal within N region is pulled in a condition that flow amount of the inert gas between the single crystal and the gas flow-guide cylinder is 0.6 D(L/min) or more and pressure in the chamber is 0.6 D(hPa) or less, in which D (mm) is a diameter of the single crystal to be pulled. It is preferable that there is used the gas flow-guide cylinder that Fe concentration is 0.05 ppm or less, at least, in a surface thereof. Thereby, there is provided a method for producing a single crystal, wherein in the case that a single crystal is produced by an apparatus having a gas flow-guide cylinder in accordance with CZ method, the single crystal has low defect density and Fe concentration can be suppressed to be 1×1010 atoms/cm3 or less even in a peripheral part thereof.

摘要翻译： 本发明是一种根据切克劳斯基法制造单晶的方法，该方法是使惰性气体在单晶拉制装置11的室1中向下流动，并围绕从原料熔体2拉出的单晶3与气体 流动引导圆筒4，其中当拉伸在单晶体的径向方向上以环形产生的OSF区域外的N区域内的单晶时，N区域内的单晶在惰性流动量的条件下被拉 单晶和气体导流筒之间的气体为0.6D（L / min）以上，室内的压力为0.6D（hPa）以下，其中D（mm）为单晶直径 被拉。 至少在其表面中优选使用气体导向气缸Fe浓度为0.05ppm以下。 因此，提供了一种单晶的制造方法，其中，在通过具有根据CZ法的气体导向圆筒的装置制造单晶的情况下，单晶具有低缺陷密度，Fe浓度可以 即使在其周边部分被抑制为1×10 10原子/ cm 3以下。

公开(公告)号：US5888298A

公开(公告)日：1999-03-30

申请号：US759223

申请日：1996-12-05

申请人： Takahiro Yanagimachi ,  Satoshi Soeta ,  Atsushi Iwasaki ,  Shinobu Takeyasu

发明人： Takahiro Yanagimachi ,  Satoshi Soeta ,  Atsushi Iwasaki ,  Shinobu Takeyasu

IPC分类号： B66C1/66 ,  C30B15/00 ,  C30B15/30 ,  C30B29/06 ,  H01L21/208 ,  C30B35/00

CPC分类号： C30B15/30 ,  C30B15/00 ,  Y10S117/911 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1072

摘要： A method, mechanisms and jig for handling a member of a crystal pulling apparatus are disclosed. The crystal pulling apparatus grows a single crystal from a melt of a crystalline material by a CZ method. Handling of a graphite crucible or the like of the crystal pulling apparatus, including a vertical moving operation, a swinging operation, or the like, is performed using a crane and a lifting jig. This makes it possible to readily move the member of the crystal pulling apparatus vertically and otherwise without relying on manual labor.

摘要翻译： 公开了一种用于处理拉晶装置的构件的方法，机构和夹具。 晶体拉制装置通过CZ法从结晶材料的熔体中生长单晶。 使用起重机和提升夹具来执行包括垂直移动操作，摆动操作等的晶体牵引装置的石墨坩埚等的处理。 这使得可以在不依赖于手工劳动的情况下垂直地或以其他方式容易地移动晶体牵引装置的构件。

公开(公告)号：US20100031869A1

公开(公告)日：2010-02-11

申请号：US12308122

申请日：2007-05-28

申请人： Makoto Iida ,  Nobuaki Mitamura ,  Takahiro Yanagimachi

发明人： Makoto Iida ,  Nobuaki Mitamura ,  Takahiro Yanagimachi

IPC分类号： C30B15/20

CPC分类号： C30B15/203 ,  C30B29/06 ,  C30B35/00

摘要： The present invention provides a system for manufacturing a silicon single crystal which designs manufacturing conditions under which a value of F/G is controlled to fall within a predetermined range in order that a crystal quality of a silicon single crystal manufactured by a pulling apparatus using the CZ method falls within a target standard, including, automatically, at least: means 1 tentatively designing manufacturing conditions of a silicon single crystal in a subsequent batch from a crystal quality result of a silicon single crystal in a previous batch; means 2 calculating a correction amount from an amount of change in F and/or G due to constituent members of the pulling apparatus in the subsequent batch; means 3 calculating a correction amount from an amount of change in F and/or G due to a manufacturing process in the subsequent batch; and means 4 adding the correction amount by the means 2 and/or the means 3 to the manufacturing conditions by the means 1 to calculate manufacturing conditions in the subsequent batch. As a result, there can be provided the system for manufacturing a silicon single crystal that can more assuredly obtain a silicon single crystal having a desired crystal quality and improve productivity or a yield and a method for manufacturing a silicon single crystal using this system.

摘要翻译： 本发明提供了一种制造硅单晶的系统，其设计了将F / G的值控制在规定范围内的制造条件，以使由使用 CZ方法属于目标标准，至少包括：1，从上一批硅晶单晶的晶体质量结果出发，初步设计后续批次中硅单晶的制造条件; 装置2根据后续批次中的牵引装置的构成部件从F和/或G的变化量计算校正量; 意味着3根据后续批次中的制造过程从F和/或G的变化量计算校正量; 以及通过装置1将装置2和/或装置3的校正量加到制造条件的装置4，以计算后续批次中的制造条件。 结果，可以提供一种制造硅单晶的系统，其可以更可靠地获得具有期望的晶体质量的硅单晶并且提高生产率或产率，以及使用该系统制造单晶硅的方法。

公开(公告)号：US07326395B2

公开(公告)日：2008-02-05

申请号：US10568186

申请日：2004-08-13

申请人： Izumi Fusegawa ,  Nobuaki Mitamura ,  Takahiro Yanagimachi

发明人： Izumi Fusegawa ,  Nobuaki Mitamura ,  Takahiro Yanagimachi

IPC分类号： C01B33/26

CPC分类号： C30B15/20 ,  C30B29/06 ,  Y10T117/1068

摘要： The present invention is a method for producing a single crystal in accordance with Czochralski method by flowing an inert gas downward in a chamber 1 of a single crystal-pulling apparatus 11 and surrounding a single crystal 3 pulled from a raw material melt 2 with a gas flow-guide cylinder 4, wherein when a single crystal within N region outside OSF region generated in a ring shape in the radial direction of the single crystal is pulled, the single crystal within N region is pulled in a condition that flow amount of the inert gas between the single crystal and the gas flow-guide cylinder is 0.6 D(L/min) or more and pressure in the chamber is 0.6 D(hPa) or less, in which D (mm) is a diameter of the single crystal to be pulled. It is preferable that there is used the gas flow-guide cylinder that Fe concentration is 0.05 ppm or less, at least, in a surface thereof. Thereby, there is provided a method for producing a single crystal, wherein in the case that a single crystal is produced by an apparatus having a gas flow-guide cylinder in accordance with CZ method, the single crystal has low defect density and Fe concentration can be suppressed to be 1×1010 atoms/cm3 or less even in a peripheral part thereof.

摘要翻译： 本发明是一种根据切克劳斯基法制造单晶的方法，该方法是使惰性气体在单晶拉制装置11的室1中向下流动，并围绕从原料熔体2拉出的单晶3与气体 流动引导圆筒4，其中当拉伸在单晶体的径向方向上以环形产生的OSF区域外的N区域内的单晶时，N区域内的单晶在惰性流动量的条件下被拉 单晶和气体导流筒之间的气体为0.6D（L / min）以上，室内的压力为0.6D（hPa）以下，其中D（mm）为单晶直径 被拉。 至少在其表面中优选使用气体导向气缸Fe浓度为0.05ppm以下。 因此，提供了一种单晶的制造方法，其中，在通过具有根据CZ法的气体导向筒的装置制造单晶的情况下，单晶的缺陷密度低，Fe浓度可以 即使在其周边部分被抑制为1×10 10原子/ cm 3以下。

公开(公告)号：US06764548B2

公开(公告)日：2004-07-20

申请号：US10204278

申请日：2002-08-20

申请人： Ryoji Hoshi ,  Takahiro Yanagimachi ,  Izumi Fusegawa ,  Tomohiko Ohta ,  Yuuichi Miyahara ,  Tetsuya Igarashi

发明人： Ryoji Hoshi ,  Takahiro Yanagimachi ,  Izumi Fusegawa ,  Tomohiko Ohta ,  Yuuichi Miyahara ,  Tetsuya Igarashi

IPC分类号： C30B3500

CPC分类号： C30B15/14 ,  C30B15/206 ,  C30B29/06 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： The present invention provides an apparatus and a method for producing a silicon semiconductor single crystal which can stabilize and homogenize an amount of precipitated oxygen in the direction of the crystal growth axis when growing a silicon semiconductor single crystal. The apparatus for producing a silicon semiconductor single crystal by the Czochralski method comprises a main growth furnace having a crucible retaining silicon melt disposed therein for growing a silicon semiconductor single crystal, and an upper growth furnace for housing therein and cooling the silicon semiconductor single crystal pulled from the silicon melt, wherein the upper growth furnace communicated to a ceiling section of the main growth furnace is provided with an upper insulating member for surrounding a pulled silicon semiconductor single crystal.

摘要翻译： 本发明提供了一种用于制造硅半导体单晶的装置和方法，当生长硅半导体单晶时，可以使晶体生长轴方向上的沉淀氧量稳定和均化。 通过切克劳斯基法生产硅半导体单晶的装置包括：主生长炉，其具有保存硅熔体的坩埚，用于生长硅半导体单晶;以及上部生长炉，用于容纳在其中并冷却硅半导体单晶拉伸 与硅熔体相连，其中与主生长炉的顶部连通的上部生长炉设置有用于围绕拉制硅半导体单晶的上部绝缘构件。