公开(公告)号：US5888298A

公开(公告)日：1999-03-30

申请号：US759223

申请日：1996-12-05

申请人： Takahiro Yanagimachi ,  Satoshi Soeta ,  Atsushi Iwasaki ,  Shinobu Takeyasu

发明人： Takahiro Yanagimachi ,  Satoshi Soeta ,  Atsushi Iwasaki ,  Shinobu Takeyasu

IPC分类号： B66C1/66 ,  C30B15/00 ,  C30B15/30 ,  C30B29/06 ,  H01L21/208 ,  C30B35/00

CPC分类号： C30B15/30 ,  C30B15/00 ,  Y10S117/911 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1072

摘要： A method, mechanisms and jig for handling a member of a crystal pulling apparatus are disclosed. The crystal pulling apparatus grows a single crystal from a melt of a crystalline material by a CZ method. Handling of a graphite crucible or the like of the crystal pulling apparatus, including a vertical moving operation, a swinging operation, or the like, is performed using a crane and a lifting jig. This makes it possible to readily move the member of the crystal pulling apparatus vertically and otherwise without relying on manual labor.

摘要翻译： 公开了一种用于处理拉晶装置的构件的方法，机构和夹具。 晶体拉制装置通过CZ法从结晶材料的熔体中生长单晶。 使用起重机和提升夹具来执行包括垂直移动操作，摆动操作等的晶体牵引装置的石墨坩埚等的处理。 这使得可以在不依赖于手工劳动的情况下垂直地或以其他方式容易地移动晶体牵引装置的构件。

公开(公告)号：US5248378A

公开(公告)日：1993-09-28

申请号：US852612

申请日：1992-03-17

申请人： Tetsuhiro Oda ,  Izumi Fusegawa ,  Hirotoshi Yamagishi ,  Atsushi Iwasaki ,  Akiho Maeda ,  Shinobu Takeyasu ,  Nobuyoshi Fujimaki ,  Yukio Karasawa

发明人： Tetsuhiro Oda ,  Izumi Fusegawa ,  Hirotoshi Yamagishi ,  Atsushi Iwasaki ,  Akiho Maeda ,  Shinobu Takeyasu ,  Nobuyoshi Fujimaki ,  Yukio Karasawa

IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B29/06

CPC分类号： C30B29/06 ,  C30B15/14 ,  Y10S117/90 ,  Y10T117/1068

摘要： A method of producing a Czochralski-grown silicon single crystal stably and efficiently with high production yield comprises the steps of setting pulling conditions such that at least a portion of a growing silicon single crystal having a temperature in excess of 1150.degree. C. is spaced upwardly from a surface of silicon melt by a distance greater than 280 mm; and pulling the growing silicon single crystal upward while maintaining the pulling conditions. The silicon single crystal produced by this method has an excellent oxide film dielectric breakdown strength. An apparatus for carrying out the method is also disclosed.

公开(公告)号：US5887015A

公开(公告)日：1999-03-23

申请号：US763883

申请日：1996-12-11

申请人： Nobuaki Mitamura ,  Toshiharu Uesugi ,  Atsushi Iwasaki ,  Shinobu Takeyasu

发明人： Nobuaki Mitamura ,  Toshiharu Uesugi ,  Atsushi Iwasaki ,  Shinobu Takeyasu

IPC分类号： C30B15/14 ,  C03B5/027

CPC分类号： C30B15/14

摘要： A heater mechanism for a crystal pulling apparatus is disclosed. Electrodes made of copper or the like and disposed under a heater are connected to the heater via graphite members. A cover member is attached to each graphite member, so that the downwardly extending portion of the cover member surrounds the outer surface of the graphite member. Accordingly, a leak or splash of a melt is prevented from contacting the electrodes. The length of each graphite member is equal to or greater than the distance between the bottom surface of the heater and the top surface of a melt spill tray which distance is measured when the heater mechanism is raised The cover member is vertically slidable along the outer surface of each graphite member. Thus, even when a material melt leaks out from a crucible, the electrodes of the heater mechanism can be protected from a fusion damage or the like which would be otherwise caused by the leak of the melt.

摘要翻译： 公开了一种用于晶体拉制装置的加热器机构。 设置在加热器下方的由铜等制成的电极通过石墨部件连接到加热器。 盖构件附接到每个石墨构件，使得盖构件的向下延伸的部分围绕石墨构件的外表面。 因此，防止熔体的泄漏或飞溅与电极接触。 每个石墨构件的长度等于或大于加热器的底表面和熔体溢出托盘的上表面之间的距离，该加热器机构升高时测量的距离。盖构件沿着外表面可垂直滑动 的每个石墨构件。 因此，即使当材料熔体从坩埚中泄漏出来时，也可以保护加热器机构的电极免受由熔体泄漏引起的熔融损伤等的​​影响。

公开(公告)号：US09422635B2

公开(公告)日：2016-08-23

申请号：US13977864

申请日：2012-01-05

申请人： Atsushi Iwasaki ,  Susumu Sonokawa ,  Shinobu Takeyasu

发明人： Atsushi Iwasaki ,  Susumu Sonokawa ,  Shinobu Takeyasu

IPC分类号： C30B15/30 ,  C30B15/10 ,  C30B15/00 ,  C30B29/06

CPC分类号： C30B15/10 ,  C30B15/00 ,  C30B15/30 ,  C30B29/06 ,  Y10T117/1072

摘要： A single crystal production apparatus using the Czochralski method, includes: a crucible for holding raw material melt; a pedestal that supports the crucible and can be moved upward and downward; a crucible rotating shaft for rotating the crucible via the pedestal; and a melt receiver that is disposed below the crucible and provided with a center sleeve surrounding the pedestal, wherein, on the outer periphery of the pedestal, two or more grooves for preventing the raw material melt leaking from the crucible from dripping are provided. The single crystal production apparatus and single crystal production method can reliably prevent melt from reaching a metal portion below the pedestal even when the raw material melt in the crucible flows to the outside of the crucible in an unexpected accident or the like and runs down along the pedestal and thereby prevent damage to the apparatus and the occurrence of an accident.

摘要翻译： 使用切克劳斯基法的单晶制造装置包括：用于保持原料熔融的坩埚; 支撑坩埚并能够向上和向下移动的基座; 用于经由基座旋转坩埚的坩埚旋转轴; 以及设置在所述坩埚下方并且设置有围绕所述基座的中心套筒的熔体接收器，其中，在所述基座的外周上设置有用于防止原料熔融物从所述坩埚中漏出的两个或更多个凹槽。 即使在坩埚中熔融的原料在意外的事故等中流动到坩埚的外部并且沿着该坩埚的下方向下流动，单晶生产装置和单晶生产方法也可以可靠地防止熔体到达基座下方的金属部分 从而防止设备损坏和发生事故。

公开(公告)号：US20130276693A1

公开(公告)日：2013-10-24

申请号：US13977864

申请日：2012-01-05

申请人： Atsushi Iwasaki ,  Susumu Sonokawa ,  Shinobu Takeyasu

发明人： Atsushi Iwasaki ,  Susumu Sonokawa ,  Shinobu Takeyasu

IPC分类号： C30B15/10 ,  C30B15/30

CPC分类号： C30B15/10 ,  C30B15/00 ,  C30B15/30 ,  C30B29/06 ,  Y10T117/1072

摘要： A single crystal production apparatus using the Czochralski method, includes: a crucible for holding raw material melt; a pedestal that supports the crucible and can be moved upward and downward; a crucible rotating shaft for rotating the crucible via the pedestal; and a melt receiver that is disposed below the crucible and provided with a center sleeve surrounding the pedestal, wherein, on the outer periphery of the pedestal, two or more grooves for preventing the raw material melt leaking from the crucible from dripping are provided. The single crystal production apparatus and single crystal production method can reliably prevent melt from reaching a metal portion below the pedestal even when the raw material melt in the crucible flows to the outside of the crucible in an unexpected accident or the like and runs down along the pedestal and thereby prevent damage to the apparatus and the occurrence of an accident.

摘要翻译： 使用切克劳斯基法的单晶制造装置包括：用于保持原料熔融的坩埚; 支撑坩埚并能够向上和向下移动的基座; 用于经由基座旋转坩埚的坩埚旋转轴; 以及设置在所述坩埚下方并且设置有围绕所述基座的中心套筒的熔体接收器，其中，在所述基座的外周上设置有用于防止原料熔融物从所述坩埚中漏出的两个或更多个凹槽。 即使在坩埚中熔融的原料在意外的事故等中流向坩埚的外部时，单晶生产装置和单晶制造方法也可以可靠地防止熔体到达基座下方的金属部分，并且沿着 从而防止设备损坏和发生事故。

公开(公告)号：US08717333B2

公开(公告)日：2014-05-06

申请号：US13044665

申请日：2011-03-10

申请人： Masao Ozeki ,  Atsushi Iwasaki

发明人： Masao Ozeki ,  Atsushi Iwasaki

IPC分类号： G06F3/044

CPC分类号： G06F3/044 ,  G06F2203/04111 ,  Y10T29/49002

摘要： An electrostatic capacity type touch panel having on one surface of a transparent substrate, a plurality of columns of column electrodes extending in a first direction and a plurality of columns of column electrodes extending in a second direction intersecting the first direction,such column electrodes extending in the first direction and such column electrodes extending in the second direction being eclectically disconnected from each other by an electrically insulating layer provided at least in a part of each intersection region of the column electrodes, and at least one of the two intersecting column electrodes being electrically connected by a bridge wire provided in the intersection region.

摘要翻译： 一种静电电容型触摸屏，其具有在透明基板的一个表面上，沿第一方向延伸的多列列电极和沿与第一方向相交的第二方向延伸的多列列电极， 第一方向和沿第二方向延伸的列电极通过至少设置在列电极的每个交叉区域的一部分中的电绝缘层彼此分离地彼此分离，并且两个相交的列电极中的至少一个是电 通过设置在交叉路口区域中的桥接线连接。

公开(公告)号：US08083852B2

公开(公告)日：2011-12-27

申请号：US12922917

申请日：2009-03-24

申请人： Kosei Sugawara ,  Ryoji Hoshi ,  Masanori Takazawa ,  Yuuichi Miyahara ,  Atsushi Iwasaki

发明人： Kosei Sugawara ,  Ryoji Hoshi ,  Masanori Takazawa ,  Yuuichi Miyahara ,  Atsushi Iwasaki

IPC分类号： C30B15/06

CPC分类号： C30B15/20 ,  C30B15/10 ,  C30B29/06 ,  Y10T117/1068 ,  Y10T117/1072

摘要： A silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material melted in a quartz crucible based on a Czochralski method, the method comprising the steps of: applying a direct current voltage in such a manner that an outer wall of the quartz crucible acts as a positive electrode and an electrode immersed into the melt of the silicon raw material acts as a negative electrode, the immersed electrode being placed separately from a pulling member for pulling the single crystal; and growing the single crystal with the pulling member while passing an electric current through the electrode, and a pulling apparatus thereof.

摘要翻译： 一种从基于Czochralski方法在石英坩埚中熔化的硅原料的熔体中提取和生长单晶的硅单晶生长方法，该方法包括以下步骤：施加直流电压，使得 石英坩埚的外壁作为正极，并且浸入硅原料的熔体中的电极用作负极，浸没电极与用于拉出单晶的拉拔构件分开放置; 以及在使电流通过电极的同时用牵引构件生长单晶及其牵引装置。

公开(公告)号：US20110237413A1

公开(公告)日：2011-09-29

申请号：US13154600

申请日：2011-06-07

申请人： Hiroyuki Sakakibara ,  Norio Hashimoto ,  Hiroaki Sakai ,  Atsushi Iwasaki ,  Yuko Sekihara ,  Kazuo Kishino ,  Masaaki Takahashi ,  Katsuhisa Matsunaka

发明人： Hiroyuki Sakakibara ,  Norio Hashimoto ,  Hiroaki Sakai ,  Atsushi Iwasaki ,  Yuko Sekihara ,  Kazuo Kishino ,  Masaaki Takahashi ,  Katsuhisa Matsunaka

IPC分类号： F28F5/02

CPC分类号： G03G15/206 ,  G03G2215/2035

摘要： A pressure roller forming a nip portion for contacting to a heating member to pinch and convey and heat recording material includes: a core metal and an elastic layer containing filler, the elastic layer containing the filler including thermal conductive filler with length of not less than 0.05 mm and not more than 1 mm and with thermal conductivity λf in the longitudinal direction in a range of λf≧500 W/(m·k) being dispersed in not less than 5 vol. % and not more than 40 vol % and the elastic layer containing the filler providing thermal conductivity λy in the longitudinal direction perpendicular to a recording material conveyance direction being λy≧2.5 W/(m·k) and ASKER-C hardness of the filler being not more than 60 degrees, wherein a solid rubber elastic layer with thermal conductivity λ in a thickness direction being not less than 0.16 W/(m·k) and not more than 0.40 W/(m·k) is included and the solid rubber elastic layer is formed on an outer periphery of the core metal and the elastic layer containing the filler is formed on the outer periphery of the solid rubber elastic layer. As a result, a pressure roller which can suppress temperature rise in a region, where recording material does not pass, stabilizes conveyability, provides high endurance, provides high thermal conductivity and low hardness is provided.

摘要翻译： 形成用于与加热构件接触以夹持和传送和加热记录材料的压区的压辊包括：芯金属和含有填料的弹性层，所述弹性层包含长度不小于0.05的导热填料的填料 mm且不大于1mm，并且在λf≥500W/（m·k）的范围内的长度方向的热导率λf分散在5体积％以上。 ％且不大于40体积％，并且包含在垂直于记录材料输送方向的纵向方向上提供热导率λy的填料的弹性层为λy≥2.5W/（m·k），填料的ASKER-C硬度为 不超过60度，其中包括厚度方向上的热导率λ的固体橡胶弹性层不小于0.16W /（m·k）且不大于0.40W /（m·k），并且固体橡胶 在芯金属的外周形成弹性层，在固体橡胶弹性层的外周形成含有填料的弹性层。 结果，可以抑制记录材料不通过的区域中的温度升高的压力辊稳定输送性，提供高耐久性，提供高导热性和低硬度。

公开(公告)号：US20110146564A1

公开(公告)日：2011-06-23

申请号：US13061586

申请日：2009-09-24

申请人： Hiroshi Ohtsuna ,  Atsushi Iwasaki

发明人： Hiroshi Ohtsuna ,  Atsushi Iwasaki

IPC分类号： C30B15/26

CPC分类号： C30B29/06 ,  C30B15/26 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1032

摘要： A method for detecting a diameter of a single crystal at the time of pulling the single crystal from a silicon melt contained in a crucible according to the Czochralski method, the method including at least: using two cameras placed equidistant from each other as a target diameter upon forming a straight-body portion of the single crystal and face both ends of the diameter of the single crystal in a growth point of the single crystal respectively, to separately capture both of the ends of the growth point of the single crystal from an outside of a furnace, the growth point being a contact point between the single crystal and a melt surface; and detecting the diameter of the single crystal on the basis of the captured images. As a result, diameter detection precision is improved.

摘要翻译： 一种用于根据切克劳斯基方法从包含在坩埚中的硅熔体中拉出单晶时的单晶直径的方法，所述方法至少包括：使用彼此等距离放置的两个相机作为目标直径 在形成单晶的直体部分并且分别在单晶的生长点处面对单晶直径的两端时，从外部单独地捕获单晶的生长点的两端 所述生长点是所述单晶和熔体表面之间的接触点; 并且基于所捕获的图像检测单晶的直径。 结果，直径检测精度提高。

公开(公告)号：US20100274805A9

公开(公告)日：2010-10-28

申请号：US11721314

申请日：2006-05-12

申请人： Akimichi Tanabe ,  Motoshi Tamura ,  Atsushi Iwasaki ,  Makoto Koushiro

发明人： Akimichi Tanabe ,  Motoshi Tamura ,  Atsushi Iwasaki ,  Makoto Koushiro

IPC分类号： G06F17/30

CPC分类号： H04W4/02 ,  H04L67/1097 ,  H04L67/16 ,  H04L67/18 ,  H04W8/005 ,  H04W8/26 ,  H04W64/00 ,  H04W68/00 ,  H04W88/14 ,  H04W88/16

摘要： A communications system is provided which can search for information about a communications device that is not registered in a network by designating time. The search system, which includes a plurality of communications devices, gateways and an entity management server, can execute a search method. The entity management server stores in a storage device the identification information of the communications device sent from the gateways with establishing correspondence with notification time. The entity management server receives from a mobile terminal the identification information of the communications device and designated time. The entity management server searches for the identification information stored in the storage device at the designated time, and identifies the location information of the gateways corresponding to the identification information included in the search request.

摘要翻译： 提供通信系统，其可以通过指定时间来搜索关于未在网络中注册的通信设备的信息。 包括多个通信设备，网关和实体管理服务器的搜索系统可以执行搜索方法。 实体管理服务器将从网关发送的通信设备的识别信息与通知时间建立对应关系，存储在存储设备中。 实体管理服务器从移动终端接收通信设备的识别信息和指定时间。 实体管理服务器在指定时间搜索存储在存储设备中的识别信息，并且识别与包括在搜索请求中的识别信息相对应的网关的位置信息。