摘要:
A timing signal generating device for a matrix-type display apparatus is disclosed, conducive to reduction of power consumption, the matrix-type display apparatus including the timing signal generating device, and a driving method thereof. In at least one embodiment, a timing signal generating apparatus provided in an active-matrix liquid crystal display apparatus includes a horizontal direction counter and a vertical direction counter for counting a clock number; and a horizontal counter cessation circuit and a vertical counter cessation circuit for stopping the horizontal direction counter and the vertical direction counter at a predetermined timing. With this structure, at least one embodiment of the present invention achieves reduction in power consumption in the liquid crystal display apparatus.
摘要:
The present invention relates to a serial-parallel conversion circuit of a display device.First latch circuits for sampling and latching a serial signal in accordance with sampling pulses outputted from a shift register (31) are provided in association with stages of the shift register (31). In addition, second latch circuits for latching signals outputted from the first latch circuits are provided in association with portions of the stages of the shift register (31). In this case, of all the stages of the shift register (31), the number of stages associated with the second latch circuits is less than the total number of stages of the shift register by two or more.
摘要:
A readily-mountable low-cost active matrix display apparatus with a setup function is provided. A serial interface circuit 20 and setup circuits 16 are each formed of TFT elements on a liquid crystal panel 11. The serial interface circuit 20 performs serial-parallel conversion on a setup control signal 17 serially inputted via setup terminals 15. The setup circuits 16 change the states of signals flowing in the liquid crystal panel 11 in accordance with signals outputted in parallel from the serial interface circuit 20. Thus, it is possible to change the potential, timing, etc., of signals inputted to or outputted from any peripheral circuits formed on the liquid crystal panel 11 or any peripheral circuits included in a semiconductor chip mounted on the surface of the liquid crystal panel 11.
摘要:
The present invention relates to a serial-parallel conversion circuit of a display device.First latch circuits for sampling and latching a serial signal in accordance with sampling pulses outputted from a shift register (31) are provided in association with stages of the shift register (31). In addition, second latch circuits for latching signals outputted from the first latch circuits are provided in association with portions of the stages of the shift register (31). In this case, of all the stages of the shift register (31), the number of stages associated with the second latch circuits is less than the total number of stages of the shift register by two or more.
摘要:
By reducing the potential drop of a storage node that occurs due to feedthrough, the capacitance of a storage capacitor is reduced and sensor sensitivity is improved. In a photosensor, the first terminal of a storage capacitor (C2) and the gate of a MOS transistor (M1), which outputs a signal in accordance with the potential of a storage node (N2), are connected to the storage node (N2). A forward biased pulse voltage is supplied to the anode of a first photodiode (DS) in a reset period, and a reverse biased voltage is supplied to the anode of the first photodiode in a storage period and a readout period. A reverse biased voltage is supplied to the anode of a second photodiode (DM) in all operation periods. A voltage that keeps the potential of the storage node lower than the threshold value of the MOS transistor (M1) is supplied to the second terminal of the storage capacitor in the reset period and the storage period, and a voltage that thrusts the potential of the storage node (N2) upward to the threshold value of the MOS transistor (M1) or higher is supplied to the second terminal of the storage capacitor in the readout period.
摘要:
By reducing the potential drop of a storage node that occurs due to feedthrough, the capacitance of a storage capacitor is reduced and sensor sensitivity is improved. In a photosensor, the first terminal of a storage capacitor (C2) and the gate of a MOS transistor (M1), which outputs a signal in accordance with the potential of a storage node (N2), are connected to the storage node (N2). A forward biased pulse voltage is supplied to the anode of a first photodiode (DS) in a reset period, and a reverse biased voltage is supplied to the anode of the first photodiode in a storage period and a readout period. A reverse biased voltage is supplied to the anode of a second photodiode (DM) in all operation periods. A voltage that keeps the potential of the storage node lower than the threshold value of the MOS transistor (M1) is supplied to the second terminal of the storage capacitor in the reset period and the storage period, and a voltage that thrusts the potential of the storage node (N2) upward to the threshold value of the MOS transistor (M1) or higher is supplied to the second terminal of the storage capacitor in the readout period.
摘要:
The present invention aims to provide a monolithic driver-type display device capable of reducing circuit scale of a sampling circuit, and keeping low power consumption by directly driving a source driver with an externally provided video signal.In the monolithic driver-type display device having a display portion for displaying video and circuits for driving the display portion formed on the same insulating substrate, a plurality of sampling switches are provided in association with a plurality of pieces of bit data contained in externally inputted digital video signals. The sampling switches are opened/closed based on sampling signals, thereby sampling the digital video signals for each piece of the bit data and converting the signals into parallel format for output to data lines. The outputted digital video signals charge parasitic capacitances on the data lines and are held therein.
摘要:
The present invention aims to provide a monolithic driver-type display device capable of reducing circuit scale of a sampling circuit, and keeping low power consumption by directly driving a source driver with an externally provided video signal.In the monolithic driver-type display device having a display portion for displaying video and circuits for driving the display portion formed on the same insulating substrate, a plurality of sampling switches are provided in association with a plurality of pieces of bit data contained in externally inputted digital video signals. The sampling switches are opened/closed based on sampling signals, thereby sampling the digital video signals for each piece of the bit data and converting the signals into parallel format for output to data lines. The outputted digital video signals charge parasitic capacitances on the data lines and are held therein.
摘要:
In one embodiment of the present invention, a voltage source is disclosed including a lower output impedance is connected to a capacitive load via a switch element and a voltage source including a higher output impedance is connected to the capacitive load via a switch element. Until a potential of an output terminal attains a reference potential, a comparator keeps the switch element in an ON state so that the voltage source writes a potential onto the capacitive load. When the potential of the output terminal exceeds the reference potential, the comparator causes the switch element to be in an ON state so that the voltage source writes a potential onto the capacitive load so as to have a predetermined potential.
摘要:
A transistor model for a simulator simulates a resistance between a source region and a drain region with a model equation which has terms representing resistance values corresponding respectively to areas of mutually different impurity concentrations below a gate section in simulating characteristics of a transistor. At least two of the terms each having a threshold parameter indicating a voltage at which a semiconductor element composed of the associated region and regions adjacent to that region changes from an ON state to an OFF state. The threshold parameters of the terms being specified independently from each other. Thus, the characteristics of a transistor having a set of areas of mutually different impurity concentrations below a gate section, inclusive of subthreshold regions which are difficult to evaluate through actual measurement, can be simulated to high accuracy while preserving a good fit with a capacitance model.