公开(公告)号：US09617655B2

公开(公告)日：2017-04-11

申请号：US13997722

申请日：2011-12-26

申请人： Nobuhiro Okada ,  Kazuhito Kamei ,  Kazuhiko Kusunoki ,  Nobuyoshi Yashiro ,  Kouji Moriguchi ,  Hironori Daikoku ,  Hiroshi Suzuki ,  Tomokazu Ishii ,  Hidemitsu Sakamoto ,  Motohisa Kado ,  Yoichiro Kawai

发明人： Nobuhiro Okada ,  Kazuhito Kamei ,  Kazuhiko Kusunoki ,  Nobuyoshi Yashiro ,  Kouji Moriguchi ,  Hironori Daikoku ,  Hiroshi Suzuki ,  Tomokazu Ishii ,  Hidemitsu Sakamoto ,  Motohisa Kado ,  Yoichiro Kawai

IPC分类号： C30B15/20 ,  C30B29/36 ,  C30B15/14 ,  C30B17/00 ,  C30B15/30

CPC分类号： C30B15/20 ,  C30B15/14 ,  C30B15/30 ,  C30B15/305 ,  C30B17/00 ,  C30B29/36 ,  Y10T117/1068

摘要： An apparatus for SIC single crystal has an induction heating control unit such that frequency f (Hz) of alternating current to the induction heating unit satisfies Formula (1); D1 (mm) is permeation depth of electromagnetic waves into a crucible side wall by the heating unit, D2 (mm) is permeation depth of electromagnetic waves into a SIC solution, T (mm) is thickness of the crucible side wall of the crucible, and R (mm) is crucible inner radius: (D1−T)×D2/R>1.5  (1) where, D1 is defined by Formula (2) and D2 by Formula (3): D1=503292×(1/(f×σc×μc))1/2  (2) D2=503292×(1/(f×σs×μs))1/2  (3); σc is electric conductivity (S/m) of the sidewall, σs is electric conductivity (S/m) of the SiC solution; μc is relative permeability of the sidewall, and μs is relative permeability of the SIC solution.

公开(公告)号：US20130284083A1

公开(公告)日：2013-10-31

申请号：US13997722

申请日：2011-12-26

申请人： Nobuhiro Okada ,  Kazuhito Kamei ,  Kazuhiko Kasunoki ,  Nobuyoshi Yashiro ,  Kouji Moriguchi ,  Hironori Daikoku ,  Hiroshi Suzuki ,  Tomokazu Ishii ,  Hidemitsu Sakamoto ,  Motohisa Kado ,  Yoichiro Kawai

发明人： Nobuhiro Okada ,  Kazuhito Kamei ,  Kazuhiko Kasunoki ,  Nobuyoshi Yashiro ,  Kouji Moriguchi ,  Hironori Daikoku ,  Hiroshi Suzuki ,  Tomokazu Ishii ,  Hidemitsu Sakamoto ,  Motohisa Kado ,  Yoichiro Kawai

IPC分类号： C30B15/20 ,  C30B15/14 ,  C30B15/30

CPC分类号： C30B15/20 ,  C30B15/14 ,  C30B15/30 ,  C30B15/305 ,  C30B17/00 ,  C30B29/36 ,  Y10T117/1068

摘要： A manufacturing apparatus for SiC single crystal has a control unit to control induction heating such that frequency f (Hz) of alternating current to be passed to the induction heating unit satisfies Formula (1); D1 (mm) is permeation depth of electromagnetic waves into a side wall of a crucible by the heating unit, D2 (mm) is permeation depth of electromagnetic waves into a SiC solution, T (mm) is thickness of the crucible side wall of the crucible, and R (mm) is crucible inner radius: (D1−T)×D2/R>1  (1) where, D1 is defined by Formula (2), and D2 by Formula (3): D1=503292×(1/(f×σc×μc))1/2  (2) D2=503292×(1/(f×σs×μs))1/2  (3); σc is electric conductivity (S/m) of the sidewall, σs is electric conductivity (S/m) of the SiC solution; μc is relative permeability of the sidewall, and μs relative permeability of the SiC solution.

摘要翻译： SiC单晶的制造装置具有用于控制感应加热的控制单元，使得要传递到感应加热单元的交流电流的频率f（Hz）满足公式（1）; D1（mm）是电磁波通过加热单元进入坩埚侧壁的渗透深度，D2（mm）是电磁波向SiC溶液的渗透深度，T（mm）是坩埚侧壁的厚度 坩埚和R（mm）是坩埚内半径：（D1-T）×D2 / R> 1（1）其中，D1由式（2）定义，D2由式（3）定义：D1 = 503292×（ 1 /（f×sigmac×muc））1/2（2）D2 = 503292×（1 /（f×sigmas×mus））1/2（3） sigmac是侧壁的导电率（S / m），sigmas是SiC溶液的导电率（S / m）; 粘液是侧壁的相对渗透率，并且是SiC溶液的相对磁导率。

公开(公告)号：US20120118221A1

公开(公告)日：2012-05-17

申请号：US13383604

申请日：2009-07-17

申请人： Katsunori Danno ,  Akinori Seki ,  Hiroaki Saitoh ,  Yoichiro Kawai

发明人： Katsunori Danno ,  Akinori Seki ,  Hiroaki Saitoh ,  Yoichiro Kawai

IPC分类号： C30B19/12

CPC分类号： C30B29/36 ,  C30B15/14 ,  C30B17/00 ,  C30B19/04

摘要： The present invention provides a method of production of an SiC single crystal using the solution method which prevents the formation of defects due to seed tough, i.e., causing a seed crystal to touch the melt, and thereby causes growth of an Si single crystal reduced in defect density. The method of the present invention is a method of production of an SiC single crystal by causing an SiC seed crystal to touch a melt containing Si in a graphite crucible to thereby cause growth of the SiC single crystal on the SiC seed crystal, characterized by making the SiC seed crystal touch the melt, then making the melt rise in temperature once to a temperature higher than the temperature at the time of touch and also higher than the temperature for causing growth.

摘要翻译： 本发明提供一种使用这种溶液法制造SiC单晶的方法，该方法防止由于种子韧性而形成的缺陷，即使晶种接触熔体，从而使Si单晶的生长减少 缺陷密度。 本发明的方法是通过使SiC晶种与石墨坩埚中含有Si的熔体接触从而使SiC单晶在SiC晶种上生长而制造SiC单晶的方法，其特征在于， SiC晶体接触熔体，然后使熔体温度上升一次至高于触摸时温度的温度，并且还高于引起生长的温度。

公开(公告)号：US4503045A

公开(公告)日：1985-03-05

申请号：US234569

申请日：1981-02-13

申请人： Setsuro Fujii ,  Bompei Yasui ,  Tomohisa Miyamoto ,  Masatoshi Shiga ,  Kazuko Ando ,  Iwao Hashimoto ,  Masahiro Kawasaki ,  Yoichiro Kawai ,  Yuji Mino

发明人： Setsuro Fujii ,  Bompei Yasui ,  Tomohisa Miyamoto ,  Masatoshi Shiga ,  Kazuko Ando ,  Iwao Hashimoto ,  Masahiro Kawasaki ,  Yoichiro Kawai ,  Yuji Mino

IPC分类号： C07H19/073 ,  A61K31/70 ,  A61K31/7042 ,  A61K31/7052 ,  A61K31/7064 ,  A61K31/7072 ,  A61P35/00 ,  C07H19/00 ,  C07H19/06 ,  C07H19/08

CPC分类号： C07H19/06

摘要： 2'-Deoxy-3',5'-di-O-alkylcarbonyl-5-fluorouridine derivatives possessing strong anti-tumor activity with weak toxicity and represented by the general formula: ##STR1## wherein R stands for an alkyl group, an alkoxy group or a halogen atom, m for zero or an integer of 1-3, and n for an integer of 1-14, with the proviso that when m is 2 or 3, R's may be the same or different and that when m is 2 and the adjacent two R's are alkoxy groups, the two alkyl moieties of the alkoxy groups may be combined to form together with the two adjacent oxa bridging members an alkylenedioxy group as a whole. These derivatives are prepared by acylating a 2'-deoxy-3',5'-di-O-alkylcarbonyl-5-fluorouridine with corresponding benzoyl halides and are useful as active ingredients for anti-tumor agents, especially for oral administration.

摘要翻译： 2'-脱氧-3'，5'-二-O-烷基羰基-5-氟尿苷衍生物具有强的抗肿瘤活性，毒性弱，由以下通式表示：其中R代表烷基，烷氧基 基团或卤素原子，m为0或1-3的整数，n为1-14的整数，条件是当m为2或3时，R可以相同或不同，当m为 2并且相邻的两个R是烷氧基，烷氧基的两个烷基部分可以与两个相邻的氧杂桥连成员一起与亚烷基二氧基整体形成。 这些衍生物通过用相应的苯甲酰卤酰化2'-脱氧-3'，5'-二-O-烷基羰基-5-氟尿苷来制备，并且可用作抗肿瘤剂的活性成分，特别是用于口服给药。

公开(公告)号：US09587327B2

公开(公告)日：2017-03-07

申请号：US13383604

申请日：2009-07-17

申请人： Katsunori Danno ,  Akinori Seki ,  Hiroaki Saitoh ,  Yoichiro Kawai

发明人： Katsunori Danno ,  Akinori Seki ,  Hiroaki Saitoh ,  Yoichiro Kawai

IPC分类号： C30B19/12 ,  C30B29/36 ,  C30B15/14 ,  C30B19/04 ,  C30B17/00

CPC分类号： C30B29/36 ,  C30B15/14 ,  C30B17/00 ,  C30B19/04

摘要： A method of production of a SiC single crystal uses the solution method to prevent the formation of defects due to seed touch, i.e., causing a seed crystal to touch the melt, and thereby cause growth of a SiC single crystal reduced in defect density. According to the method, a SiC seed crystal touches a melt containing Si in a graphite crucible to thereby cause growth of the SiC single crystal on the SiC seed crystal. The method includes making the SiC seed crystal touch the melt, and then making the melt rise in temperature once to a temperature higher than the temperature at the time of touch and also higher than the temperature for causing growth.

摘要翻译： SiC单晶的制造方法使用溶液法防止由于种子接触引起的缺陷的形成，即使晶种接触熔融物，从而导致SiC单晶的生长缺陷密度降低。 根据该方法，SiC晶种在石墨坩埚中接触含有Si的熔融物，从而使SiC单晶在SiC晶种上生长。 该方法包括使SiC晶种接触熔体，然后使熔体升温一度至比接触时温度高的温度，并且高于引起生长的温度。