公开(公告)号：US20130284083A1

公开(公告)日：2013-10-31

申请号：US13997722

申请日：2011-12-26

申请人： Nobuhiro Okada ,  Kazuhito Kamei ,  Kazuhiko Kasunoki ,  Nobuyoshi Yashiro ,  Kouji Moriguchi ,  Hironori Daikoku ,  Hiroshi Suzuki ,  Tomokazu Ishii ,  Hidemitsu Sakamoto ,  Motohisa Kado ,  Yoichiro Kawai

发明人： Nobuhiro Okada ,  Kazuhito Kamei ,  Kazuhiko Kasunoki ,  Nobuyoshi Yashiro ,  Kouji Moriguchi ,  Hironori Daikoku ,  Hiroshi Suzuki ,  Tomokazu Ishii ,  Hidemitsu Sakamoto ,  Motohisa Kado ,  Yoichiro Kawai

IPC分类号： C30B15/20 ,  C30B15/14 ,  C30B15/30

CPC分类号： C30B15/20 ,  C30B15/14 ,  C30B15/30 ,  C30B15/305 ,  C30B17/00 ,  C30B29/36 ,  Y10T117/1068

摘要： A manufacturing apparatus for SiC single crystal has a control unit to control induction heating such that frequency f (Hz) of alternating current to be passed to the induction heating unit satisfies Formula (1); D1 (mm) is permeation depth of electromagnetic waves into a side wall of a crucible by the heating unit, D2 (mm) is permeation depth of electromagnetic waves into a SiC solution, T (mm) is thickness of the crucible side wall of the crucible, and R (mm) is crucible inner radius: (D1−T)×D2/R>1  (1) where, D1 is defined by Formula (2), and D2 by Formula (3): D1=503292×(1/(f×σc×μc))1/2  (2) D2=503292×(1/(f×σs×μs))1/2  (3); σc is electric conductivity (S/m) of the sidewall, σs is electric conductivity (S/m) of the SiC solution; μc is relative permeability of the sidewall, and μs relative permeability of the SiC solution.

摘要翻译： SiC单晶的制造装置具有用于控制感应加热的控制单元，使得要传递到感应加热单元的交流电流的频率f（Hz）满足公式（1）; D1（mm）是电磁波通过加热单元进入坩埚侧壁的渗透深度，D2（mm）是电磁波向SiC溶液的渗透深度，T（mm）是坩埚侧壁的厚度 坩埚和R（mm）是坩埚内半径：（D1-T）×D2 / R> 1（1）其中，D1由式（2）定义，D2由式（3）定义：D1 = 503292×（ 1 /（f×sigmac×muc））1/2（2）D2 = 503292×（1 /（f×sigmas×mus））1/2（3） sigmac是侧壁的导电率（S / m），sigmas是SiC溶液的导电率（S / m）; 粘液是侧壁的相对渗透率，并且是SiC溶液的相对磁导率。

公开(公告)号：US09617655B2

公开(公告)日：2017-04-11

申请号：US13997722

申请日：2011-12-26

申请人： Nobuhiro Okada ,  Kazuhito Kamei ,  Kazuhiko Kusunoki ,  Nobuyoshi Yashiro ,  Kouji Moriguchi ,  Hironori Daikoku ,  Hiroshi Suzuki ,  Tomokazu Ishii ,  Hidemitsu Sakamoto ,  Motohisa Kado ,  Yoichiro Kawai

发明人： Nobuhiro Okada ,  Kazuhito Kamei ,  Kazuhiko Kusunoki ,  Nobuyoshi Yashiro ,  Kouji Moriguchi ,  Hironori Daikoku ,  Hiroshi Suzuki ,  Tomokazu Ishii ,  Hidemitsu Sakamoto ,  Motohisa Kado ,  Yoichiro Kawai

IPC分类号： C30B15/20 ,  C30B29/36 ,  C30B15/14 ,  C30B17/00 ,  C30B15/30

CPC分类号： C30B15/20 ,  C30B15/14 ,  C30B15/30 ,  C30B15/305 ,  C30B17/00 ,  C30B29/36 ,  Y10T117/1068

摘要： An apparatus for SIC single crystal has an induction heating control unit such that frequency f (Hz) of alternating current to the induction heating unit satisfies Formula (1); D1 (mm) is permeation depth of electromagnetic waves into a crucible side wall by the heating unit, D2 (mm) is permeation depth of electromagnetic waves into a SIC solution, T (mm) is thickness of the crucible side wall of the crucible, and R (mm) is crucible inner radius: (D1−T)×D2/R>1.5  (1) where, D1 is defined by Formula (2) and D2 by Formula (3): D1=503292×(1/(f×σc×μc))1/2  (2) D2=503292×(1/(f×σs×μs))1/2  (3); σc is electric conductivity (S/m) of the sidewall, σs is electric conductivity (S/m) of the SiC solution; μc is relative permeability of the sidewall, and μs is relative permeability of the SIC solution.

公开(公告)号：US09702056B2

公开(公告)日：2017-07-11

申请号：US14126942

申请日：2012-06-11

申请人： Kazuhito Kamei ,  Kazuhiko Kusunoki ,  Nobuyoshi Yashiro ,  Nobuhiro Okada ,  Hironori Daikoku ,  Motohisa Kado ,  Hidemitsu Sakamoto

发明人： Kazuhito Kamei ,  Kazuhiko Kusunoki ,  Nobuyoshi Yashiro ,  Nobuhiro Okada ,  Hironori Daikoku ,  Motohisa Kado ,  Hidemitsu Sakamoto

IPC分类号： C30B15/10 ,  C30B35/00 ,  C30B19/02 ,  C30B29/36 ,  C30B17/00 ,  C30B19/08

CPC分类号： C30B15/10 ,  C30B17/00 ,  C30B19/02 ,  C30B19/08 ,  C30B29/36 ,  C30B35/00 ,  Y10T117/1032

摘要： A region of an SiC solution in the vicinity of an SiC seed crystal is cooled while suppressing the temperature variation in a peripheral region of the SiC solution. An apparatus includes a seed shaft and a crucible for an SiC solution. The seed shaft has a lower end surface for attachment to an SiC seed crystal. The crucible comprises a main body, an intermediate cover, and a top cover. The main body includes a first cylindrical portion and a bottom portion at a lower end portion of the first cylindrical portion. The intermediate cover is within the first cylindrical portion and above the liquid level of the SiC solution in the main body. The intermediate cover has a first through hole for the seed shaft. The top cover is disposed above the intermediate cover and has a second through hole for the seed shaft to pass through.

公开(公告)号：US09388508B2

公开(公告)日：2016-07-12

申请号：US13997766

申请日：2011-12-26

申请人： Kazuhito Kamei ,  Kazuhiko Kusunoki ,  Nobuyoshi Yashiro ,  Nobuhiro Okada ,  Motohisa Kado ,  Hidemitsu Sakamoto ,  Hironori Daikoku

发明人： Kazuhito Kamei ,  Kazuhiko Kusunoki ,  Nobuyoshi Yashiro ,  Nobuhiro Okada ,  Motohisa Kado ,  Hidemitsu Sakamoto ,  Hironori Daikoku

IPC分类号： C30B11/04 ,  C30B15/32 ,  C30B19/06 ,  C30B29/36

CPC分类号： C30B15/32 ,  C30B19/06 ,  C30B29/36 ,  Y10T117/1032 ,  Y10T117/1072

摘要： A manufacturing apparatus of a SiC single crystal which can suppress the generation of a polycrystal is provided. A jig (41) and a crucible (6) are accommodated in a chamber (1). A SiC solution (8) is housed in the crucible (6). The jig (41) includes a seed shaft (411) and a cover member (412). The seed shaft (411) can move up and down, and a SiC seed crystal (9) is attached to the lower surface thereof. The cover member (412) is attached to the lower end portion of the seed shaft (411). The cover member (412) is a housing which has an opening at its lower end, wherein the lower end portion of the seed shaft (411) is disposed in the cover member (412).

摘要翻译： 提供了可以抑制多晶体的产生的SiC单晶的制造装置。 夹具（41）和坩埚（6）容纳在腔室（1）中。 将SiC溶液（8）容纳在坩埚（6）中。 夹具（41）包括种子轴（411）和盖构件（412）。 种子轴（411）可以上下移动，并且其SiC晶种（9）附着到其下表面。 盖构件（412）附接到种子轴（411）的下端部。 盖构件（412）是在其下端具有开口的壳体，其中种子轴（411）的下端部设置在盖构件（412）中。

公开(公告)号：US20130305981A1

公开(公告)日：2013-11-21

申请号：US13997766

申请日：2011-12-26

申请人： Kazuhito Kamei ,  Kazuhiko Kusunoki ,  Nobuyoshi Yashiro ,  Nobuhiro Okada ,  Motohisa Kado ,  Hidemitsu Sakamoto ,  Hironori Daikoku

发明人： Kazuhito Kamei ,  Kazuhiko Kusunoki ,  Nobuyoshi Yashiro ,  Nobuhiro Okada ,  Motohisa Kado ,  Hidemitsu Sakamoto ,  Hironori Daikoku

IPC分类号： C30B15/32

CPC分类号： C30B15/32 ,  C30B19/06 ,  C30B29/36 ,  Y10T117/1032 ,  Y10T117/1072

摘要： A manufacturing apparatus of a SiC single crystal which can suppress the generation of a polycrystal is provided. A jig (41) and a crucible (6) are accommodated in a chamber (1). A SiC solution (8) is housed in the crucible (6). The jig (41) includes a seed shaft (411) and a cover member (412). The seed shaft (411) can move up and down, and a SiC seed crystal (9) is attached to the lower surface thereof. The cover member (412) is attached to the lower end portion of the seed shaft (411). The cover member (412) is a housing which has an opening at its lower end, wherein the lower end portion of the seed shaft (411) is disposed in the cover member (412).

摘要翻译： 提供了可以抑制多晶体的产生的SiC单晶的制造装置。 夹具（41）和坩埚（6）容纳在腔室（1）中。 将SiC溶液（8）容纳在坩埚（6）中。 夹具（41）包括种子轴（411）和盖构件（412）。 种子轴（411）可以上下移动，并且其SiC晶种（9）附着到其下表面。 盖构件（412）附接到种子轴（411）的下端部。 盖构件（412）是在其下端具有开口的壳体，其中种子轴（411）的下端部设置在盖构件（412）中。

公开(公告)号：US09783911B2

公开(公告)日：2017-10-10

申请号：US14410969

申请日：2013-07-15

申请人： Nobuyoshi Yashiro ,  Kazuhito Kamei ,  Kazuhiko Kusunoki ,  Nobuhiro Okada ,  Koji Moriguchi ,  Hironori Daikoku ,  Hidemitsu Sakamoto ,  Motohisa Kado

发明人： Nobuyoshi Yashiro ,  Kazuhito Kamei ,  Kazuhiko Kusunoki ,  Nobuhiro Okada ,  Koji Moriguchi ,  Hironori Daikoku ,  Hidemitsu Sakamoto ,  Motohisa Kado

IPC分类号： C30B19/02 ,  C30B15/10 ,  C30B19/04 ,  C30B19/06 ,  C30B29/36 ,  C30B15/32

CPC分类号： C30B15/10 ,  C30B15/32 ,  C30B19/04 ,  C30B19/067 ,  C30B29/36 ,  Y10T117/1032

摘要： A production apparatus is used for a solution growth method. The production apparatus includes a seed shaft and a crucible. The seed shaft has a lower end surface to which an SiC seed crystal is attached. The crucible contains an SiC solution. The crucible includes a cylindrical portion, a bottom portion, and an inner lid. The bottom portion is disposed at a lower end of the cylindrical portion. The inner lid is disposed in the cylindrical portion. The inner lid has a through hole and is positioned below a liquid surface of the SiC solution when the SiC solution is contained in the crucible.

公开(公告)号：US09732441B2

公开(公告)日：2017-08-15

申请号：US14125625

申请日：2012-06-15

申请人： Kazuhiko Kusunoki ,  Kazuhito Kamei ,  Nobuyoshi Yashiro ,  Nobuhiro Okada ,  Hironori Daikoku ,  Motohisa Kado ,  Hidemitsu Sakamoto

发明人： Kazuhiko Kusunoki ,  Kazuhito Kamei ,  Nobuyoshi Yashiro ,  Nobuhiro Okada ,  Hironori Daikoku ,  Motohisa Kado ,  Hidemitsu Sakamoto

IPC分类号： C30B9/00 ,  C30B35/00 ,  C30B9/10 ,  C30B29/36 ,  C30B15/32 ,  C30B17/00 ,  C30B11/00 ,  C30B19/06 ,  C30B19/08

CPC分类号： C30B35/00 ,  C30B9/10 ,  C30B11/003 ,  C30B15/32 ,  C30B17/00 ,  C30B19/068 ,  C30B19/08 ,  C30B29/36 ,  Y10T117/1068 ,  Y10T117/1092

摘要： An apparatus for producing an SiC single crystal includes a crucible for accommodating an Si—C solution and a seed shaft having a lower end surface where an SiC seed crystal (36) would be attached. The seed shaft includes an inner pipe that extends in a height direction of the crucible and has a first passage. An outer pipe accommodates the inner pipe and constitutes a second passage between itself and the inner pipe and has a bottom portion whose lower end surface covers a lower end opening of the outer pipe. One passage of the first and second passages serves as an introduction passage where coolant gas flows downward, and the other passage serves as a discharge passage where coolant gas flows upward. A region inside the pipe that constitutes the introduction passage is to be overlapped by a region of not less than 60% of the SiC seed crystal.

公开(公告)号：US20140116324A1

公开(公告)日：2014-05-01

申请号：US14125625

申请日：2012-06-15

申请人： Kazuhiko Kusunoki ,  Kazuhito Kamei ,  Nobuyoshi Yashiro ,  Nobuhiro Okada ,  Hironori Daikoku ,  Motohisa Kado ,  Hidemitsu Sakamoto

发明人： Kazuhiko Kusunoki ,  Kazuhito Kamei ,  Nobuyoshi Yashiro ,  Nobuhiro Okada ,  Hironori Daikoku ,  Motohisa Kado ,  Hidemitsu Sakamoto

IPC分类号： C30B35/00 ,  C30B11/00 ,  C30B15/32

CPC分类号： C30B35/00 ,  C30B9/10 ,  C30B11/003 ,  C30B15/32 ,  C30B17/00 ,  C30B19/068 ,  C30B19/08 ,  C30B29/36 ,  Y10T117/1068 ,  Y10T117/1092

摘要： An apparatus for producing an SiC single crystal includes a crucible for accommodating an Si—C solution and a seed shaft having a lower end surface where an SiC seed crystal (36) would be attached. The seed shaft includes an inner pipe that extends in a height direction of the crucible and has a first passage. An outer pipe accommodates the inner pipe and constitutes a second passage between itself and the inner pipe and has a bottom portion whose lower end surface covers a lower end opening of the outer pipe. One passage of the first and second passages serves as an introduction passage where coolant gas flows downward, and the other passage serves as a discharge passage where coolant gas flows upward. A region inside the pipe that constitutes the introduction passage is to be overlapped by a region of not less than 60% of the SiC seed crystal.

摘要翻译： 一种用于制造SiC单晶的装置包括用于容纳Si-C溶液的坩埚和具有附接有SiC晶种（36）的下端面的种子轴。 种子轴包括在坩埚的高度方向上延伸并具有第一通道的内管。 外管容纳内管，构成内管之间的第二通道，下端面覆盖外管下端开口的底部。 第一通道和第二通道的一个通道用作冷却剂气体向下流动的引入通道，另一个通道用作冷却剂气体向上流动的排出通道。 构成引入通道的管内的区域与SiC晶种不小于60％的区域重叠。

公开(公告)号：US09708734B2

公开(公告)日：2017-07-18

申请号：US14648027

申请日：2013-11-11

申请人： Hironori Daikoku ,  Hidemitsu Sakamoto ,  Motohisa Kado ,  Kazuhiko Kusunoki

发明人： Hironori Daikoku ,  Hidemitsu Sakamoto ,  Motohisa Kado ,  Kazuhiko Kusunoki

IPC分类号： C30B19/10 ,  C30B30/04 ,  C30B29/36 ,  C30B17/00 ,  C30B19/04 ,  C30B19/06 ,  C30B19/12

CPC分类号： C30B30/04 ,  C30B17/00 ,  C30B19/04 ,  C30B19/062 ,  C30B19/067 ,  C30B19/068 ,  C30B19/10 ,  C30B19/12 ,  C30B29/36

摘要： The purpose of the present invention is to produce a high-quality SiC single crystal with good reproducibility while avoiding the fluctuations in the solution-contacting position of a seed crystal among production operations. A method for producing a SiC single crystal by bringing a SiC seed crystal supported by a supporting bar into contact with a solution that has been heated by high-frequency induction to thereby grow the SiC single crystal, wherein the supporting bar is born down while applying a magnetic field to the solution to thereby bring the SiC seed crystal into contact with the solution, and subsequently the application of the magnetic field is halted to grow the SiC single crystal.

公开(公告)号：US09322112B2

公开(公告)日：2016-04-26

申请号：US13326638

申请日：2011-12-15

申请人： Tomokazu Ishii ,  Hidemitsu Sakamoto ,  Kazuhiko Kusunoki ,  Kazuhito Kamei

发明人： Tomokazu Ishii ,  Hidemitsu Sakamoto ,  Kazuhiko Kusunoki ,  Kazuhito Kamei

IPC分类号： C30B15/20 ,  C30B29/36 ,  C30B17/00

CPC分类号： C30B29/36 ,  C30B17/00 ,  Y10T117/1068 ,  Y10T117/1088

摘要： To suppress 3D or convex growth and ensure a high flatness, an apparatus for producing an SiC single crystal includes: a container which holds an SiC solution, a portion for maintaining the solution in the container at a suitable temperature, a shaft having a lower end part acting as a portion for holding an SiC seed crystal in planar contact with an overall back surface of a crystal growth face and acting as a portion for cooling the SiC seed crystal, and a portion of the holding shaft for enabling an SiC single crystal to continuously grow at the crystal growth face by maintaining the crystal growth face brought into contact with the solution, a lower end part of the shaft having a portion for obtaining a uniform in-plane temperature distribution of the crystal growth face brought into planar contact, and a method for the same.

摘要翻译： 为了抑制3D或凸起生长并确保高平坦度，用于制造SiC单晶的装置包括：容纳SiC溶液的容器，用于将容器中的溶液保持在合适温度的部分，具有下端的轴 作为用于保持SiC晶种与晶体生长面的整个后表面平面接触并用作冷却SiC晶种的部分的部分的部分，以及用于使SiC单晶能够 通过保持晶体生长面与溶液接触而在晶体生长面上连续生长，轴的下端部具有用于获得平面接触的晶体生长面的均匀的面内温度分布的部分，以及 一种方法。