公开(公告)号：US08013694B2

公开(公告)日：2011-09-06

申请号：US12295586

申请日：2007-03-30

申请人： Nobuki Hiramatsu ,  Djuniadi A. Sagala ,  Tetsuya Kishino

发明人： Nobuki Hiramatsu ,  Djuniadi A. Sagala ,  Tetsuya Kishino

IPC分类号： H01P3/00

CPC分类号： H01P1/18 ,  G01S7/03 ,  H01P3/165 ,  Y10T29/49155

摘要： The invention relates to a small and low-voltage operable dielectric waveguide device. First and second electrode are embedded in a dielectric part and are formed to be thinner than a skin depth for a frequency of electromagnetic wave propagating along a first dielectric part included in the dielectric part. Thereby, even if the first and second electrodes are arranged to be in contact with the first dielectric part, the propagating electromagnetic wave can transmit the first and second electrodes, and therefore the electromagnetic wave can propagate without being cut off and there is no influence on waveguide modes of the electromagnetic wave. Further, in a state where a transmission loss due to the embedded of the electrode is suppressed, an electric field with large electric field strength can be applied to the first dielectric part by the first and second electrodes, and a small and low-voltage operable dielectric waveguide device can be achieved.

摘要翻译： 本发明涉及一种小型和低压可操作的介质波导器件。 第一和第二电极被嵌入电介质部分中，并且形成为比沿着电介质部分中包括的第一电介质部分传播的电磁波频率的趋肤深度更薄。 由此，即使第一电极和第二电极配置成与第一电介质部分接触，传播的电磁波也可以传输第一和第二电极，因此电磁波可以传播而不被切断，并且不影响 波导模式的电磁波。 此外，在由于电极嵌入而导致的传输损耗被抑制的状态下，可以通过第一和第二电极将具有大电场强度的电场施加到第一介质部分，并且可以将低电压和低电压 可以实现电介质波导器件。

公开(公告)号：US20090174499A1

公开(公告)日：2009-07-09

申请号：US12295586

申请日：2007-03-30

申请人： Nobuki Hiramatsu ,  Djuniadi A. Sagala ,  Tetsuya Kishino

发明人： Nobuki Hiramatsu ,  Djuniadi A. Sagala ,  Tetsuya Kishino

IPC分类号： H03H7/20 ,  H05K3/10 ,  H01P1/22 ,  H03H7/00 ,  G01S7/02

CPC分类号： H01P1/18 ,  G01S7/03 ,  H01P3/165 ,  Y10T29/49155

摘要： The invention relates to a small and low-voltage operable dielectric waveguide device. First and second electrode are embedded in a dielectric part and are formed to be thinner than a skin depth for a frequency of electromagnetic wave propagating along a first dielectric part included in the dielectric part. Thereby, even if the first and second electrodes are arranged to be in contact with the first dielectric part, the propagating electromagnetic wave can transmit the first and second electrodes, and therefore the electromagnetic wave can propagate without being cut off and there is no influence on waveguide modes of the electromagnetic wave. Further, in a state where a transmission loss due to the embedded of the electrode is suppressed, an electric field with large electric field strength can be applied to the first dielectric part by the first and second electrodes, and a small and low-voltage operable dielectric waveguide device can be achieved.

摘要翻译： 本发明涉及一种小型和低压可操作的介质波导器件。 第一和第二电极被嵌入电介质部分中，并且形成为比沿着电介质部分中包括的第一电介质部分传播的电磁波频率的趋肤深度更薄。 由此，即使第一电极和第二电极配置成与第一电介质部分接触，传播的电磁波也可以传输第一和第二电极，因此电磁波可以传播而不被切断，并且不影响 波导模式的电磁波。 此外，在由于电极嵌入而导致的传输损耗被抑制的状态下，可以通过第一和第二电极将具有大电场强度的电场施加到第一介质部分，并且可以将低电压和低电压 可以实现电介质波导器件。

公开(公告)号：US20140015624A1

公开(公告)日：2014-01-16

申请号：US14008292

申请日：2012-03-13

申请人： Tetsuya Kishino

发明人： Tetsuya Kishino

IPC分类号： H03H9/54

CPC分类号： H03H9/54 ,  H03H9/1085 ,  H03H9/1452 ,  H03H9/14541 ,  H03H9/14547 ,  H03H9/14579

摘要： The IDT electrode has the first bus bar and second bus bar; the plurality of first electrode fingers and the plurality of second electrode fingers mutually intersect; the plurality of first dummy electrodes and the plurality of second dummy electrodes which extend have front ends facing front ends of the plurality of first electrode fingers and the plurality of second electrode fingers with the gap s1; the plurality of first auxiliary electrodes which protrude laterally from the front end side portions of the pluralities of first dummy electrodes; and the plurality of second auxiliary electrodes which protrude laterally from the front end side portions of the plurality of second dummy electrodes. The plurality of first auxiliary electrodes have edge portions located a side of the second bus bar. The edge portions are located a side of the second bus bar the more to a side of the front end.

摘要翻译： IDT电极具有第一母线和第二母线; 所述多个第一电极指和所述多个第二电极指彼此相交; 所述多个第一虚设电极和所述多个第二虚设电极的前端面朝向所述多个第一电极指的前端，所述多个第二电极指具有间隙s1; 多个第一辅助电极，其从多个第一虚拟电极的前端侧部侧向突出; 以及从多个第二虚拟电极的前端侧部侧向突出的多个第二辅助电极。 多个第一辅助电极具有位于第二母线的一侧的边缘部分。 边缘部分位于第二母线的一侧，越靠近前端的一侧。

公开(公告)号：US6147569A

公开(公告)日：2000-11-14

申请号：US357187

申请日：1999-07-20

申请人： Tetsuya Kishino ,  Takeshi Okamura ,  Akinori Satoh

发明人： Tetsuya Kishino ,  Takeshi Okamura ,  Akinori Satoh

IPC分类号： H01P3/16 ,  H01P5/02 ,  H01P5/18

CPC分类号： H01P5/188

摘要： A non-radiative dielectric waveguide coupler for coupling or dividing high-frequency signals between at least two dielectric waveguides arranged maintaining a predetermined gap between a pair of parallel flat conductors, wherein said two dielectric waveguides are connected to each other through a bridge of a dielectric material. Upon joining the two dielectric waveguides through the bridge, the gap between the two dielectric waveguides, that affects the characteristics of the coupler, is set maintaining a high precision without effecting any particular positioning operation. Therefore, the coupler can be mass-produced very favorably. Besides, the gap between the two dielectric waveguides is stably maintained without being varied during the production of the coupler or during the use of the coupler, contributing to improving the reliability of the coupler. A drop in the characteristics of the coupler stemming from the provision of the bridge is easily avoided by setting the width of the bridge to be smaller than the width of the dielectric waveguides.

摘要翻译： 一种非辐射介质波导耦合器，用于在布置成保持一对平行扁平导体之间的预定间隙的至少两个介质波导之间耦合或分割高频信号，其中所述两个介质波导通过电介质桥接器相互连接 材料。 在通过桥连接两个介质波导时，设置影响耦合器特性的两个介质波导之间的间隙保持高精度，而不影响任何特定的定位操作。 因此，可以非常有利地大量生产耦合器。 此外，两个介质波导之间的间隙在耦合器的制造期间或耦合器的使用期间被稳定地保持而不变，有助于提高耦合器的可靠性。 通过将桥的宽度设置为小于介质波导的宽度，可以容易地避免由提供桥提供的耦合器的特性的下降。

公开(公告)号：US09350320B2

公开(公告)日：2016-05-24

申请号：US14008292

申请日：2012-03-13

申请人： Tetsuya Kishino

发明人： Tetsuya Kishino

IPC分类号： H03H9/25 ,  H03H9/145 ,  H03H9/54 ,  H03H9/10

CPC分类号： H03H9/54 ,  H03H9/1085 ,  H03H9/1452 ,  H03H9/14541 ,  H03H9/14547 ,  H03H9/14579

摘要： The IDT electrode has the first bus bar and second bus bar; the plurality of first electrode fingers and the plurality of second electrode fingers mutually intersect; the plurality of first dummy electrodes and the plurality of second dummy electrodes which have front ends facing front ends of the plurality of first electrode fingers and the plurality of second electrode fingers with the gap s1; the plurality of first auxiliary electrodes which protrude laterally from the front end side portions of the pluralities of first dummy electrodes; and the plurality of second auxiliary electrodes which protrude laterally from the front end side portions of the plurality of second dummy electrodes. The plurality of first auxiliary electrodes have edge portions located a side of the second bus bar. The edge portions are located a side of the second bus bar the more to a side of the front end.

摘要翻译： IDT电极具有第一母线和第二母线; 所述多个第一电极指和所述多个第二电极指彼此相交; 所述多个第一虚拟电极和所述多个第二虚设电极具有面对所述多个第一电极指的前端的前端和具有所述间隙s1的所述多个第二电极指; 多个第一辅助电极，其从多个第一虚拟电极的前端侧部侧向突出; 以及从多个第二虚拟电极的前端侧部侧向突出的多个第二辅助电极。 多个第一辅助电极具有位于第二母线的一侧的边缘部分。 边缘部分位于第二母线的一侧，越靠近前端的一侧。

公开(公告)号：US07002435B2

公开(公告)日：2006-02-21

申请号：US10670752

申请日：2003-09-25

申请人： Tsuneo Mishima ,  Tetsuya Kishino ,  Hideharu Kurioka

发明人： Tsuneo Mishima ,  Tetsuya Kishino ,  Hideharu Kurioka

IPC分类号： H01H7/06 ,  H01G7/06

CPC分类号： H01L27/016 ,  H01G4/33 ,  H01G7/06 ,  H01L27/0808

摘要： There is disclosed a variable capacitance circuit which comprises: first to Nth variable capacitance elements C1-CN (N is an odd number) sequentially connected in series between an input terminal I and an output terminal O, whose capacitances change depending on voltage applied thereto; an ith bias line on the input terminal side provided between an input terminal portion of the first variable capacitance element and a connection point between a 2ith variable capacitance element and a (2i+1)th variable capacitance element; and an ith bias line on the output terminal side provided between an output terminal portion of the Nth variable capacitance element and a connection point between a (2i−1)th variable capacitance element and the 2ith variable capacitance element, where N and i are integers satisfying N=2n+1, n≧1, 1≦i≦n. With the arrangement of the variable capacitance circuit, it is possible to provide a variable capacitance thin film capacitor device whose capacitance change ratio is small in a radio frequency region and large in a direct current region can be provided. Furthermore, a radio frequency device utilizing the variable capacitance thin film capacitor device can be provided.

摘要翻译： 公开了一种可变电容电路，包括：在输入端子I和输出端子O之间串联连接的第一至第N可变电容元件C 1 -CN（N为奇数），其电容随施加于其上的电压而变化 ; 设置在第一可变电容元件的输入端子部分和第二可变电容元件与第（2i + 1）可变电容元件之间的连接点之间的输入端侧上的第i个偏置线; 以及设置在第N可变电容元件的输出端部与第（2i-1）可变电容元件与第二可变电容元件之间的连接点之间的输出端侧的第i个偏置线，其中N和i为整数 满足N = 2n + 1，n> = 1,1，i = n。 通过可变电容电路的布置，可以提供一种可变电容薄膜电容器件，其在射频区域的电容变化率小且直流区域大。 此外，可以提供利用可变电容薄膜电容器装置的射频装置。

公开(公告)号：US20060011961A1

公开(公告)日：2006-01-19

申请号：US10950178

申请日：2004-09-24

申请人： Kenji Taki ,  Tetsuya Kishino

发明人： Kenji Taki ,  Tetsuya Kishino

IPC分类号： H01L27/108

CPC分类号： H01G7/06

摘要： A thin film capacitor includes a pair of electrodes and a dielectric layer having piezoelectricity sandwiched therebetween. The phase characteristic of an impedance resulting from application of a voltage to the pair of electrodes peaks periodically according to a frequency of a signal to be inputted or outputted. The frequency of the signal is adjusted to fall in between the values representing the adjacent peaks. Since there are periodic peak values that depend upon the frequency of the inputted or outputted signal, in fabricating a band-pass filter, a higher attenuation can be attained by ensuring that the peak value stands at a low-frequency level. Thus, a higher attenuation can be attained at low frequencies without sacrificing the band-pass characteristic, whereby making it possible to produce a band-pass filter that is excellent in band-pass characteristic.

摘要翻译： 薄膜电容器包括一对电极和夹在其间的压电性的电介质层。 根据要输入或输出的信号的频率，对一对电极施加电压产生的阻抗的相位特性周期性地突出。 信号的频率被调整为落在表示相邻峰值的值之间。 由于存在取决于输入或输出信号的频率的周期性峰值，因此在制造带通滤波器时，可以通过确保峰值处于低频电平来获得更高的衰减。 因此，在低频下可以获得较高的衰减，而不牺牲带通特性，从而可以产生带通特性优异的带通滤波器。

公开(公告)号：US6094106A

公开(公告)日：2000-07-25

申请号：US104089

申请日：1998-06-24

申请人： Tetsuya Kishino ,  Takeshi Okamura

发明人： Tetsuya Kishino ,  Takeshi Okamura

IPC分类号： H01P3/16 ,  H01P1/22 ,  H01P1/26 ,  H01P3/12

CPC分类号： H01P3/165

摘要： A module equipped with a non-radiative dielectric waveguide in accordance with this invention comprises a pair of parallel flat conductors arranged at a space of 1/2 or below of a high frequency signal wavelength .lambda. and a dielectric strip extending between these parallel flat conductors. This dielectric strip is formed from a cordierite ceramic having a dielectric constant of 4.5 to 8, especially 4.5 to 6. Conversion of an electromagnetic wave of LSM mode to an electromagnetic wave of LSE is minimal. When the module has a dielectric strip having a steep curved portion having a small radius of curvature, the transmission is possible with a low loss, and the band width of a high frequency signal is broad.

摘要翻译： 配备有根据本发明的非辐射介质波导的模块包括一对平行的扁平导体，其布置在高频信号波长λ的+ E，fra 1/2 + EE或更低的空间处，并且延伸 在这些平行扁平导体之间。 该介质条由介电常数为4.5至8，特别是4.5至6的堇青石陶瓷形成。LSM模式的电磁波转换为LSE的电磁波是最小的。 当模块具有具有小曲率半径的陡峭曲面部分的介质条时，可以以低损耗进行传输，高频信号的带宽是宽的。

公开(公告)号：US09503049B2

公开(公告)日：2016-11-22

申请号：US13878116

申请日：2011-12-22

申请人： Junya Nishii ,  Tetsuya Kishino ,  Hiroyuki Tanaka ,  Kyohei Kobayashi ,  Kenji Yamamoto ,  Masahisa Shimozono ,  Takanori Ikuta ,  Michiaki Nishimura

发明人： Junya Nishii ,  Tetsuya Kishino ,  Hiroyuki Tanaka ,  Kyohei Kobayashi ,  Kenji Yamamoto ,  Masahisa Shimozono ,  Takanori Ikuta ,  Michiaki Nishimura

IPC分类号： H03H9/25 ,  H03H9/145 ,  H03H9/64

CPC分类号： H03H9/25 ,  H03H9/14541 ,  H03H9/6406

摘要： A SAW element has a substrate; an IDT electrode located on an upper surface of the substrate and comprises Al or an alloy containing Al; a first film located on an upper surface of the IDT electrode; and a protective layer which covers the IDT electrode provided with the first film and the portion of the substrate exposed from the IDT electrode, which has a thickness from the upper surface of the substrate larger than a total thickness of the IDT electrode and first film, and which contains a silicon oxide. The first film contains a material which has a larger acoustic impedance than the material (Al or the alloy containing Al) of the IDT electrode and the silicon oxide and which has a slower propagation velocity of an acoustic wave than the material of the IDT electrode and the silicon oxide.

摘要翻译： SAW元件具有基板; 位于基板的上表面上的IDT电极，包括Al或含Al的合金; 位于IDT电极的上表面上的第一膜; 以及保护层，其覆盖设置有第一膜的IDT电极和从IDT电极露出的部分，该基板的厚度从基板的上表面大于IDT电极和第一膜的总厚度， 并含有氧化硅。 第一膜包含具有比IDT电极和氧化硅的材料（Al或含Al的合金）更大的声阻抗并且声波的传播速度比IDT电极的材料慢的材料， 氧化硅。

公开(公告)号：US20130207747A1

公开(公告)日：2013-08-15

申请号：US13878116

申请日：2011-12-22

申请人： Junya Nishii ,  Tetsuya Kishino ,  Hiroyuki Tanaka ,  Kyohei Kobayashi ,  Kenji Yamamoto ,  Masahisa Shimozono ,  Takanori Ikuta ,  Michiaki Nishimura

发明人： Junya Nishii ,  Tetsuya Kishino ,  Hiroyuki Tanaka ,  Kyohei Kobayashi ,  Kenji Yamamoto ,  Masahisa Shimozono ,  Takanori Ikuta ,  Michiaki Nishimura

IPC分类号： H03H9/25 ,  H03H9/64

CPC分类号： H03H9/25 ,  H03H9/14541 ,  H03H9/6406

摘要： A SAW element has a substrate; an IDT electrode located on an upper surface of the substrate and comprises Al or an alloy containing Al; a first film located on an upper surface of the IDT electrode; and a protective layer which covers the IDT electrode provided with the first film and the portion of the substrate exposed from the IDT electrode, which has a thickness from the upper surface of the substrate larger than a total thickness of the IDT electrode and first film, and which contains a silicon oxide. The first film contains a material which has a larger acoustic impedance than the material (Al or the alloy containing Al) of the IDT electrode and the silicon oxide and which has a slower propagation velocity of an acoustic wave than the material of the IDT electrode and the silicon oxide.

摘要翻译： SAW元件具有基板; 位于基板的上表面上的IDT电极，包括Al或含Al的合金; 位于IDT电极的上表面上的第一膜; 以及保护层，其覆盖设置有第一膜的IDT电极和从IDT电极露出的部分，该基板的厚度从基板的上表面大于IDT电极和第一膜的总厚度， 并含有氧化硅。 第一膜包含具有比IDT电极和氧化硅的材料（Al或含Al的合金）更大的声阻抗并且声波的传播速度比IDT电极的材料慢的材料， 氧化硅。