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    Light activated semiconductor device
    1.
    发明授权
    Light activated semiconductor device 失效
    光激活半导体器件

    公开(公告)号：US4404580A

    公开(公告)日：1983-09-13

    申请号：US172072

    申请日：1980-07-24

    申请人： Nobutake Konishi ,  Masayoshi Naito ,  Tsutomu Yatsuo ,  Yoshio Terasawa

    发明人： Nobutake Konishi ,  Masayoshi Naito ,  Tsutomu Yatsuo ,  Yoshio Terasawa

    IPC分类号： H01L29/74 ,  H01L31/111 ,  H01L29/12 ,  H01L29/14

    CPC分类号： H01L31/1113 ,  H01L29/74

    摘要： A light activated thyristor with high dv/dt capability is provided by disposing first and second thyristors, one a primary and the other a pilot thyristor, in a semiconductor body having first and second major surface. The two thyristors have common first emitter, first base, and second base regions, and have spaced apart second emitter regions adjoining the second major surface of the body. The second emitter region of the second thyristor consists of first and second portions, first portion abutting the second base region of the second thyristor to create a ratarded electrical field. An exposed portion of the second major surface at the second emitter region of the second thyristor activates the second thyristor when electromagnetic radiation of wavelengths corresponding substantially to the energy bandgap of the semiconductor body strikes this exposed portion. The cathode electrode makes ohmic contact with the second emitter region of the first thyristor, and the anode electrode makes ohmic contact with the common first emitter regions. A floating contact also makes ohmic contact to the second emitter region of the second thyristor and the common second base region between the thyristors.

    摘要翻译： 具有高dv / dt能力的光激活晶闸管通过在具有第一和第二主表面的半导体本体中设置第一和第二晶闸管，一个一个导电晶闸管和另一个晶闸管。 两个晶闸管具有共同的第一发射极，第一基极和第二基极区域，并且具有邻接主体的第二主表面的间隔开的第二发射极区域。 第二晶闸管的第二发射极区域由第一和第二部分组成，第一部分邻接第二晶闸管的第二基极区域以产生经过电压的电场。 当第二晶闸管的第二发射极区域处的第二主表面的暴露部分激活第二晶闸管，当基本上对应于半导体主体的能带隙的波长的电磁辐射撞击该暴露部分时。 阴极电极与第一晶闸管的第二发射极区域欧姆接触，并且阳极电极与共同的第一发射极区域欧姆接触。 浮动接触还使第二晶闸管的第二发射极区域和晶闸管之间的公共第二基极区域欧姆接触。

    Bidirectional photothyristor device
    3.
    发明授权
    Bidirectional photothyristor device 失效
    双向光闸晶体管

    公开(公告)号：US4016593A

    公开(公告)日：1977-04-05

    申请号：US583406

    申请日：1975-06-03

    申请人： Nobutake Konishi ,  Tsutomu Yatsuo ,  Tatsuya Kamei ,  Masahiro Okamura ,  Takuzo Ogawa

    发明人： Nobutake Konishi ,  Tsutomu Yatsuo ,  Tatsuya Kamei ,  Masahiro Okamura ,  Takuzo Ogawa

    IPC分类号： H01L29/74 ,  H01L29/747 ,  H01L31/0203 ,  H01L31/111

    CPC分类号： H01L31/0203 ,  H01L31/1113

    摘要： A bidirectional photothyristor device comprises a semiconductive substrate including an NPNPN quintuple layer in which projections of both the outer layers Ns in the stacking direction are not overlapped so as to define two quadruple layer regions each having either one of the outer layers Ns as an end layer, a pair of main electrodes connecting the two quadruple layer regions in parallel relationship, a recess formed between the two quadruple layer regions within the semiconductive substrate and to which two intermediate P-N junctions are exposed, and means for applying a light trigger signal to the recess.

    摘要翻译： 双向光闸晶体管装置包括一个包括NPNPN五元组的半导体衬底，其中层叠方向上的两个外层Ns的突起不重叠，以便限定两个四层层，每层具有外层Ns中的任一层作为端层 一对主电极并联连接两个四重层区域，形成在半导体衬底内的两个四重层区域之间并且两个中间PN结露出的凹部和用于将光触发信号施加到凹部的装置 。

    Bidirectional light-activated thyristor having substrate optical isolation
    4.
    发明授权
    Bidirectional light-activated thyristor having substrate optical isolation 失效
    具有基板光学隔离的双向光激活晶闸管

    公开(公告)号：US4216487A

    公开(公告)日：1980-08-05

    申请号：US879758

    申请日：1978-02-21

    申请人： Nobutake Konishi ,  Takeshi Yokota ,  Yoshitaka Sugawara ,  Tsutomu Yatsuo ,  Masahiro Okamura

    发明人： Nobutake Konishi ,  Takeshi Yokota ,  Yoshitaka Sugawara ,  Tsutomu Yatsuo ,  Masahiro Okamura

    IPC分类号： H01L29/74 ,  G02B6/42 ,  H01L29/747 ,  H01L31/0203 ,  H01L31/111 ,  H01L31/167 ,  H02M1/08

    CPC分类号： H01L31/0203 ,  G02B6/421 ,  G02B6/4295 ,  H01L31/1113 ,  H01L31/167

    摘要： Disclosed is a bidirectional light-activated thyristor which comprises a first and a second thyristor portion arranged in inverse-parallel with each other with a predetermined positional relation, an isolation section for electrically isolating the first and second thyristor portions from each other, a first and a second main electrode for connecting the first and second thyristor portions with each other in inverse-parallel, and a first and a second photo-trigger means for triggering the first and second thyristor portions respectively, wherein the photo-trigger signal from the first photo-trigger means is prevented by the first thyristor portion from reaching the second thyristor portion and the photo-trigger signal from the second photo-trigger means is prevented by the second thyristor portion from reaching the first thyristor portion.

    摘要翻译： 公开了一种双向光激活晶闸管，其包括以预定的位置关系彼此相反并联布置的第一和第二晶闸管部分，用于将第一和第二晶闸管部分彼此电隔离的隔离部分，第一和第二晶体管 用于将第一和第二晶闸管部分彼此并联连接的第二主电极和分别触发第一和第二晶闸管部分的第一和第二光触发装置，其中来自第一照片的光触发信号 通过第一晶闸管部分防止触发装置到达第二晶闸管部分，并且通过第二晶闸管部分防止来自第二光触发装置的光触发信号到达第一晶闸管部分。

    Light-activated semiconductor-controlled rectifier
    6.
    发明授权
    Light-activated semiconductor-controlled rectifier 失效
    光敏半导体可控整流器

    公开(公告)号：US4016592A

    公开(公告)日：1977-04-05

    申请号：US555279

    申请日：1975-03-04

    申请人： Tsutomu Yatsuo ,  Nobutake Konishi

    发明人： Tsutomu Yatsuo ,  Nobutake Konishi

    IPC分类号： H01L29/74 ,  H01L31/111

    CPC分类号： H01L31/1113

    摘要： A light-activated semiconductor-controlled rectifier apparatus has four layers of PNPN. The outer N-type layer comprises a first portion having a plurality of short-circuiting apertures and a second portion substantially separated from the first portion by an intermediate layer of P-type. One of the main electrodes is in ohmic contact with the first portion, with the intermediate P-type layer exposed through the short-circuiting apertures, with the periphery of the second portion and with the portion of the intermediate layer adjacent to the second portion, so that a photo signal is radiated on the second portion.

    摘要翻译： 光激活的半导体控制整流装置具有四层PNPN。 外部N型层包括具有多个短路孔的第一部分和通过P型中间层与第一部分基本分离的第二部分。 主电极之一与第一部分欧姆接触，中间P型层通过短路孔暴露，第二部分的周边和中间层的部分与第二部分相邻， 使得在第二部分上照射光信号。

    Light coupled semiconductor device and method of manufacturing the same
    7.
    发明授权
    Light coupled semiconductor device and method of manufacturing the same 失效
    光耦合半导体器件及其制造方法

    公开(公告)号：US4100562A

    公开(公告)日：1978-07-11

    申请号：US678171

    申请日：1976-04-19

    申请人： Yoshitaka Sugawara ,  Tsutomu Yatsuo ,  Nobutake Konishi

    发明人： Yoshitaka Sugawara ,  Tsutomu Yatsuo ,  Nobutake Konishi

    IPC分类号： H01L31/111 ,  G02B6/42 ,  H01L31/12 ,  H01L31/167

    CPC分类号： G02B6/4295 ,  G02B6/4212 ,  G02B6/4248 ,  H01L31/167 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/1301

    摘要： A light emitting semiconductor device and a light detecting semiconductor device are coupled optically with each other through a light guide. The light guide is made of a single piece of light transmissible insulating material and at least its end portion associated with the semiconductor light detector is brought into wet contact with a light sensing region of the semiconductor light detector including its neighboring area. While being in fluid state, the light transmissible insulator held in wet contact with the semiconductor light emitter and detector is shaped into a predetermined configuration and thereafter hardened to form the light guide.

    摘要翻译： 发光半导体器件和光检测半导体器件通过光导彼此光学耦合。 光导由单片透光绝缘材料制成，并且至少其与半导体光检测器相关联的端部与包括其相邻区域的半导体光检测器的光感测区域湿式接触。 在处于流体状态时，保持与半导体光发射器和检测器湿接触的透光性绝缘体成形为预定构造，然后硬化以形成光导。